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Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Published online by Cambridge University Press:  07 June 2016

Bandar Alshehri ,
Karim Dogheche ,
Sofiane Belahsene ,
Bilal Janjua ,
Abderrahim Ramdane ,
Gilles Patriarche ,
Tien-Khee Ng ,
Boon S-Ooi ,
Didier Decoster  and
Elhadj Dogheche
Bandar Alshehri*
Affiliation:
Institute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520) Villeneuve d’ascq, France.
Karim Dogheche
Affiliation:
Institute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520) Villeneuve d’ascq, France.
Sofiane Belahsene
Affiliation:
Laboratory for Photonics Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France.
Bilal Janjua
Affiliation:
Photonics Laboratory, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
Abderrahim Ramdane
Affiliation:
Laboratory for Photonics Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France.
Gilles Patriarche
Affiliation:
Laboratory for Photonics Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France.
Tien-Khee Ng
Affiliation:
Photonics Laboratory, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
Boon S-Ooi
Affiliation:
Photonics Laboratory, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
Didier Decoster
Affiliation:
Institute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520) Villeneuve d’ascq, France.
Elhadj Dogheche
Affiliation:
Institute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520) Villeneuve d’ascq, France.
*
*(Email: bandar.alshehri@iemn.univ-lille1.fr)
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Abstract

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

Keywords

molecular beam epitaxy (MBE)metalorganic depositionscanning transmission electron microscopy (STEM)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1735 - 1742
Copyright
Copyright © Materials Research Society 2016 

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References

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