13 results
GaN Homoepitaxy for Device Applications
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 878-889
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- 1999
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GaN Homoepitaxy for Device Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G10.2
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- 1998
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Ion Scattering Studies of Defects In Gan Thin Films on C-Oriented Sapphire
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 543
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- 1998
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Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN
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- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 293
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- 1997
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GaN based LED's with different recombination zones
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e44
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- 1997
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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e26
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- 1997
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Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e4
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- 1997
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Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e15
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- 1997
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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e19
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- 1996
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On Surface Cracking of Ammonia for MBE Growth of GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 161
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- 1996
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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e13
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- 1996
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Determination of the dislocation densities in GaN on c-oriented sapphire
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e40
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- 1996
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NH3 as Nitrogen Source in MBE growth of GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 135
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- 1995
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