Heterotrophic soil protists encompass lineages that are both evolutionarily ancient and highly diverse, providing an untapped wealth of scientific insight. Yet the diversity of free-living heterotrophic terrestrial protists is still largely unknown. To contribute to our understanding of this diversity, we present a checklist of heterotrophic protists currently reported from terrestrial Antarctica, for which no comprehensive evaluation currently exists. As a polar continent, Antarctica is especially susceptible to rising temperatures caused by anthropogenic climate change. Establishing a baseline for future conservation efforts of Antarctic protists is therefore important. We performed a literature search and found 236 taxa identified to species and an additional 303 taxa identified to higher taxonomic levels in 54 studies spanning over 100 years of research. Isolated by distance, climate and the circumpolar vortex, Antarctica is the most extreme continent on Earth: it is not unreasonable to think that it may host physiologically and evolutionarily unique species of protists, yet currently most species discovered in Antarctica are considered cosmopolitan. Additional sampling of the more extreme intra-continental zones will probably result in the discovery of more novel and unique taxa.

In Ramsey theory one wishes to know how large a collection of objects can be while avoiding a particular substructure. A problem of recent interest has been to study how large subsets of the natural numbers can be while avoiding three-term geometric progressions. Building on recent progress on this problem, we consider the analogous problem over quadratic number fields. We first construct high-density subsets of the algebraic integers of an imaginary quadratic number field that avoid three-term geometric progressions. When unique factorization fails, or over a real quadratic number field, we instead look at subsets of ideals of the ring of integers. Our approach here is to construct sets ‘greedily’, a generalization of the greedy set of rational integers considered by Rankin. We then describe the densities of these sets in terms of values of the Dedekind zeta function. Next, we consider geometric-progression-free sets with large upper density. We generalize an argument by Riddell to obtain upper bounds for the upper density of geometric-progression-free subsets, and construct sets avoiding geometric progressions with high upper density to obtain lower bounds for the supremum of the upper density of all such subsets. Both arguments depend critically on the elements with small norm in the ring of integers.

Primary cardiac tumours in children are rare. Despite the majority of these tumours being benign, they may cause blood flow obstruction, ventricular dysfunction, and life-threatening arrhythmias. We present a case of a 4-year-old boy with repeated presyncope episodes in whom we found a large left ventricular fibroma. Our case emphasises that surgical resection is safely feasible even with large fibromas, avoiding cardiac transplantation in childhood.

Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films grown by metallorganic chemical vapor deposition (MOCVD) on the (0001) surface of epitaxially-grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations.

The interpretation of ECCI images in the forescattered geometry presents a more complex diffraction configuration than that encountered in the backscattered geometry. Determining the Kikuchi line that is the primary source of image intensity often requires more than simple inspection of the electron-channeling pattern. This problem can be addressed, however, by comparing recorded ECCI images of threading screw dislocations in 4H-SiC with simulated images. An ECCI image of this dislocation is found to give the orientation of the dominant Kikuchi line, greatly simplifying the determination of the diffraction simulation. In addition, computed images of threading screw dislocations in 4H-SiC were found to exhibit channeling contrast essentially identical to that obtained experimentally by ECCI and allowing determination of the dislocation Burgers vector.

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.