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Thin films were prepared from bulk targets by pulsed-laser deposition techniques. The targets were composed of Ba0.6Sr0.4TiO3 with charge-compensated substitutions for Ti4+. Results of the dielectric characterization measurements will be discussed and compared to the results of similar measurements in bulk materials with the same composition.
Ba0.6Sr0.4(YTa)yTi1-2yO3 has been shown to have properties which are promising for tunable applications requiring low dielectric constant [1]. Ba0.6Sr0.4(YTa)yTi1-2yO3 with y ≤ 0.10 has been synthesized and well-characterized using x-ray diffraction, EDAX, and Raman Spectroscopy. The dependence of the dielectric properties on concentration, y, of Y and Ta are discussed along with implications for improved performance in device applications.
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