Feasibility of multiwavelength Raman spectroscopy was studied as a potentialin-line monitoring technique for grain size distribution in channel poly-Si usedin three dimensional stacked NAND (3D NAND) Flash memory devices. Variouschannel poly-Si materials in 3D-NAND Flash memory devices, converted fromchemical vapor deposition (CVD) grown a-Si, were characterized usingnon-contact, multiwavelength Raman spectroscopy and high resolutioncross-sectional transmission electron microscopy (HRXTEM). The Ramancharacterization results were compared with HRXTEM images. The correlationbetween the grain size distribution characterized by multiwavelength Ramanspectroscopy and “on current” (ION) of 3D NANDFlash memory devices was investigated. Good correlation between these techniqueswas seen. Multiwavelength Raman spectroscopy is very promising as anon-destructive in-line monitoring technique for grain size distribution inchannel poly-Si used in 3D NAND Flash memory devices.

We performed this study to investigate the effect of histone deacetylase inhibition during extended culture of in vitro matured mouse oocytes. In vitro matured mouse (BDF1) oocytes were cultured in vitro for 6, 12, and 24 h, respectively, and then inseminated. During in vitro culture for 6 and 12 h, two doses of trichostatin A (TSA), a histone deacetylase inhibitor, were added (100 nM and 500 nM) to the culture medium and the oocytes were then inseminated. During the 24-h in vitro culture, two doses of TSA were added (100 nM and 500 nM) to the medium and the oocytes were activated with 10 mM SrCl2. After the 6-h culture, the fertilization rate was similar to that of the control group, but the blastocyst formation rate was significantly decreased. After the 12-h culture, both the fertilization and blastocyst formation rates were significantly decreased. After the 24-h culture, total fertilization failure occurred. In the oocytes cultured for 6 and 12 h, the fertilization and blastocyst formation rates did not differ between the TSA-supplemented and control groups. Although extended culture of the mouse oocytes significantly affected their fertilization and embryo development, TSA supplementation did not overcome their decreased developmental potential.

Plasticity in amorphous alloys is associated with strain softening, induced by the creation of additional free volume during deformation. In this paper, the role of free volume, which was a priori in the material, on work softening was investigated. For this, an as-cast Zr-based bulk metallic glass (BMG) was systematically annealed below its glass transition temperature, so as to reduce the free volume content. The bonded-interface indentation technique is used to generate extensively deformed and well defined plastic zones. Nanoindentation was utilized to estimate the hardness of the deformed as well as undeformed regions. The results show that the structural relaxation annealing enhances the hardness and that both the subsurface shear band number density and the plastic zone size decrease with annealing time. The serrations in the nanoindentation load-displacement curves become smoother with structural relaxation. Regardless of the annealing condition, the nanohardness of the deformed regions is ∼12–15% lower, implying that the prior free volume only changes the yield stress (or hardness) but not the relative flow stress (or the extent of strain softening). Statistical distributions of the nanohardness obtained from deformed and undeformed regions have no overlap, suggesting that shear band number density has no influence on the plastic characteristics of the deformed region.

Telomerase maintains the length of telomeres in immortal cells and is also often associated with cell proliferation. Cholesteatoma epithelium is characterized by a dysregulation with hyperproliferative growth. The study evaluated the telomerase activity in cholesteatoma and normal retro-auricular skin to discover the relationship between telomerase expression and clinical findings. Twenty-two samples of cholesteatoma and 15 samples of retro-auricular skin were obtained from patients undergoing middle-ear surgery. The telomerase activity was detected by the telomerase repeat amplification protocol (TRAP) assay method. Seventeen of the 22 (77.3 per cent) cholesteatoma cases expressed telomerase activity, whereas none of the 15 retro-auricular normal skin (0 per cent) detected telomerase activity. There was no significant difference between telomerase expressions and clinical findings, including hearing level, duration of disease, and the degree of extension (p>0.05). The high expression of telomerase in cholesteatoma suggests that the activation of telomerase may be related to the proliferative nature of cholesteatoma.

Selective nucleation and lateral growing method have been developed for high quality ferroelectric PZT(65/35) thin films using perovskite-phase PZT island seed. The PZT films on PZT seed island were transformed into the perovskite phase at temperatures as low as 540°C, which is 150°C lower than compared to that of PZT thin films deposited on Pt films. The temperature difference enables lateral growth without undesirable random nucleation. Maximum grain sizes of the perovskite-phase PZT films were determined by the annealing temperature. The PZT thin films show a leakage current density of 8×10−8 A/cm2, breakdown field of 1240 kV/cm, saturation polarization of 42 μC/cm2, and remanent polarization of 30 μC/cm2, whose values were maintained up to 2×1011 cycles. In this study, we show that when there was no grain boundary in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. So the main source of degradation is the grain boundary in the PZT thin films.

The effects of grain boundaries on the characteristics of the PZT thin films using single-grained PZT array by selective nucleation and growth method were investigated by locating the upper Pt electrode of 8 μm× 8 μm sized square directly on the single grains, 1 grain boundary and 4 grain boundaries in a controlled manner. It turned out that when there was no grain boundary, the best ferroelectric and electrical performance were obtained as expected. However, serious degradation was observed in polarization, leakage current, breakdown field and fatigue characteristics when grain boundary was contained in the area measured. This is the first qualitative investigation about the effects of the grain boundaries on the ferroelectric and electrical performance of the PZT thin films. It was found that degradation of the PZT thin films was accelerated with increasing the length of the grain boundaries within the top electrode and the main source of degradation in PZT thin films is grain boundary.

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.