The AC fatigue test technique, which uses cyclic joule heating to apply thermal cycles to thin-film structures, was applied to copper lines and vias in damascene dielectric structures on silicon substrates. Specimen chips with two different types of dielectric, oxide and low-k, were tested. The lines were 300 nm wide; various via widths were tested. At 100 Hz, cyclic temperature ranges from 400 to 900 °C produced line lifetimes between 10 and 1 million seconds. Similar lifetimes were reached in the vias for temperature ranges between 100 and 500 °C. The data were plotted as number of load reversals to failure against cyclic temperature range; the data trends for the two different types of dielectric were indistinguishable. When the line data were fit to the Basquin equation for mechanical fatigue, the temperature ranges for both dielectrics at the one1-reversal intercept were above 1000 °C. The via data were more scattered, but trended toward a lower intercept temperature.

We demonstrate the evolution of microstructure and deformation associated with the use of electrical methods for evaluating mechanical reliability of patterned interconnects on rigid substrates. Thermomechanical fatigue in aluminum and copper interconnects was induced by means of low frequency (100 Hz), high density (> 10 MA/cm2) alternating currents, which caused cyclic Joule heating and associated thermal expansion strains between the metal lines and oxidized silicon substrate. The failure mechanism involved formation of localized plasticity, which caused topography changes on the free surfaces of the metal, leading to open circuit eventually taking place by melting at a region of severely reduced cross-sectional area. Both aluminum and copper responded to power cycling by deforming in a manner highly dependent upon variations in grain size and orientation. Isolated patches of damage appeared early within individual grains or clusters of grains, as determined by a quasi in situ scanning electron microscopy and automated electron backscatter diffraction measurement. With increased cycling, the extent of damage became more severe and widespread. We document some examples of the types of damage that mechanically confined interconnects exhibited when subjected to thousands of thermal cycles, including growth and re-orientation of grains in a systematic manner. We observed in the case of Al-1Si certain grains increasing by nearly an order of magnitude in size, and reorienting by greater than 30°. The suitability of electrical methods for accelerated testing of mechanical reliability is also discussed.

The height difference Δhb between the ideally sharp Berkovich indenter tip and a Δhb rounded tip was measured by direct observation using atomic force microscopy (AFM). The accuracy of the indirect area function method for measuring h was confirmed. The Δhb indentation size effects (ISE) in (100) single crystal copper, (100) single crystal tungsten, and fused quartz were characterized by applying the ISE model considering the rounded tip effect. The model fits the data these materials well, even though fused quartz does not deform by dislocations. However, a very small value of the ISE characteristic length h' was obtained for fused quartz. The present h' value for (100) copper is 32% larger than a previously-measured value for polycrystalline copper. This may indicate that grain boundaries suppress the dislocation activity envisioned in the ISE model.

We report the results of tensile tests of thin films of Al-0.5 % Cu deposited on bare silicon. This material was subjected to the complete CMOS fabrication process, including a high-temperature heat treatment. Contact metal makes the electrical connection between the metal wiring and the silicon transistors in a chip. Room-temperature values of yield strength, ultimate tensile strength, and elongation were all lower than the corresponding values found previously for pure electron-beam-evaporated aluminum films. The strengths and elongation decreased slightly as the specimen temperature was raised from 25 to 150°C. The slopes of the stress-strain curves from unloading-reloading runs were lower than the accepted Young's modulus of bulk polycrystalline aluminum. The results are interpreted with the help of scanning and transmission electron microscopy.

A new method of measuring the mechanical strength of thin films is described. We prepare miniature arrays of four tensile specimens, each 0.25 mm wide, 1 mm long, and 2.2 μm thick, using deposition, patterning, and etching processes common to the semiconductor industry. Each array of four specimens is carried on and protected by a rectangular silicon frame. Thirty-six such specimens are produced on a single wafer. After a specimen frame is mounted, its vertical sides are severed without damaging the specimens. The load is applied by micrometers through a special tension spring. Tensile properties of a 2.2 μm thick Ti–Al–Ti film were determined.

An approach to measuring the mechanical properties of thin films with in—plane and thickness dimensions comparable to those of films in VLSI electronic devices and in multi—chip modules is being developed. The guiding principles are to utilize as much as possible the technology of microelectronic fabrication and to make the design downward—scalable in size so that eventually the very smallest films and structures can be tested. The necessary components have been designed; we are in the process of building and testing them.

The specimen and associated instrumention are fabricated by semiconductor techniques on a 50 mm—diameter silicon wafer. Piezoresistors arranged as strain—sensitive Wheatstone bridges are fabricated by diffusion. One bridge, located on a grip section, is the load cell. After opening contact windows and metallization, the thin—film specimen is deposited. Then the silicon wafer is patterned and etched, leaving the specimen hanging between two instrumented grip sections linked by flexible silicon springs. Relative displacement of the grip sections is imposed by either a micrometer or a micro—stepper motor and measured by a scanned laser beam and by additional strain—sensitive bridges.