We have structured our response around 3 rough categories of commentary themes: those that provided illustrations of existing person-centric research, those that provided novel ideas about extending the viewpoint to traditional research areas, and those that criticized our neglect of issues of morality and power differences. In our response, we clarify and reiterate our position as advocating a science of first-person work experience. In doing so, we differentiate our agenda from others labeled person-centric but not first-person experiential in the way we describe it. We also differentiate our position from a primary interest in worker treatment and well-being, except as part of work experience, and defend that difference.

In this essay we argue for a more person-centric direction for research in industrial–organizational (I–O) psychology. We argue that the prevailing paradigm within I–O treats workers as objects and in so doing limits the ability to develop a deep and continued understanding of the important ways in which humans relate to work. In response, we think there is a need for a more coherent focus on the worker and on the subjective experience of working. After describing the current paradigm we suggest an alternative—a person-centric work psychology that takes the worker as its focus and worker experience as a topic of study.

The present study examined the impact of children's maltreatment experiences on the emergence of externalizing problem presentations among children during different developmental periods. The sample included 788 youth and their caregivers who participated in a multisite, prospective study of youth at-risk for maltreatment. Externalizing problems were assessed at ages 4, 8, and 12, and symptoms and diagnoses of attention-deficit/hyperactivity disorder, oppositional defiant disorder, and conduct disorder were assessed at age 14, during interviews with youth and caregivers. Information about maltreatment allegations was coded from official records. Latent transition analysis identified three groups of youth with similar presentations of externalizing problems (“well adjusted,” “hyperactive/oppositional,” and “aggressive/rule-breaking”) and transitions between groups from ages 4, 8, and 12. A “defiant/deceitful” group also emerged at age 12. Girls were generally more likely to present as well adjusted than boys. Children with recent physical abuse allegations had an increased risk for aggressive/rule-breaking presentations during the preschool and preadolescent years, while children with sexual abuse or neglect allegations had lower probabilities of having well-adjusted presentations during middle childhood. These findings indicate that persistently severe aggressive conduct problems, which are related to the most concerning outcomes, can be identified early, particularly among neglected and physically and sexually abused children.

The purpose of this study was to evaluate whether children with a history of disorganized attachment in infancy were more likely than children without a history of disorganized attachment to exhibit symptoms of posttraumatic stress disorder (PTSD) at school age following trauma exposure. The sample consisted of 78 8.5-year-old children from a larger, ongoing prospective study evaluating the effects of intrauterine cocaine exposure (IUCE) on children's growth and development from birth to adolescence. At the 12-month visit, children's attachment status was scored from videotapes of infant–caregiver dyads in Ainsworth's strange situation. At the 8.5-year visit, children were administered the Violence Exposure Scale—Revised, a child-report trauma exposure inventory, and the Diagnostic Interview for Children and Adolescents by an experienced clinical psychologist masked to children's attachment status and IUCE status. Sixteen of the 78 children (21%) were classified as insecure–disorganized/insecure–other at 12 months. Poisson regressions covarying IUCE, gender, and continuity of maternal care indicated that disorganized attachment status at 12 months, compared with nondisorganized attachment status, significantly predicted both higher avoidance cluster PTSD symptoms and higher reexperiencing cluster PTSD symptoms. These findings suggest that the quality of early dyadic relationships may be linked to differences in children's later development of posttraumatic stress symptoms following a traumatic event.

The purpose of this study was to evaluate whether children with a history of disorganized attachment in infancy were more likely than children without a history of disorganized attachment to exhibit symptoms of posttraumatic stress disorder (PTSD) at school age following trauma exposure. The sample consisted of 78 8.5-year-old children from a larger, ongoing prospective study evaluating the effects of intrauterine cocaine exposure (IUCE) on children's growth and development from birth to adolescence. At the 12-month visit, children's attachment status was scored from videotapes of infant–caregiver dyads in Ainsworth's strange situation. At the 8.5-year visit, children were administered the Violence Exposure Scale—Revised, a child-report trauma exposure inventory, and the Diagnostic Interview for Children and Adolescents by an experienced clinical psychologist masked to children's attachment status and IUCE status. Sixteen of the 78 children (21%) were classified as insecure–disorganized/insecure–other at 12 months. Poisson regressions covarying IUCE, gender, and continuity of maternal care indicated that disorganized attachment status at 12 months, compared with nondisorganized attachment status, significantly predicted both higher avoidance cluster PTSD symptoms and higher reexperiencing cluster PTSD symptoms. These findings suggest that the quality of early dyadic relationships may be linked to differences in children's later development of posttraumatic stress symptoms following a traumatic event.

ZrO2 and HfO2 and their alloys with SiO2 are currently among the leading high-k materials for replacing SiOxNy as the gate dielectric for the sub-100 nm technology nodes. International SEMATECH (ISMT) is currently investigating integration issues associated with this required change in materials. Our work has focused on the integration of ALCVD deposited ZrO2 and HfO2 with an industry standard conventional MOSFET process flow with poly-Si electrode. Since the impact of contamination by these new high-k materials introduced in a production fab has not yet been established, it becomes very critical to prevent cross- contamination through the process tools in the fab. A baseline study was completed within ISMT's fab and appropriate protocols for handling high-k materials have been established. The integrated high-k gate stack in a conventional transistor flow should not only meet all the performance requirements of scaled transistors, but the gate dielectric film should be able withstand high-temperature anneal steps. Reactions between ZrO2 and Si have been observed at temperatures as low as 560°C (during the amorphous Si deposition process). Various wet chemistries were also evaluated for removing the high-k film inadvertently deposited on wafer backside, and it was found that ZrO2 etches at extremely slow rates in the majority of the common wet etch chemistries available in a fab. A new hot HF based process was found to be successful in lowering Zr contamination on the wafer backside to as low as 1.8 E10 atoms/cm2. The patterning of a high-k gate stack with poly-Si electrode is another area that required considerable focus. Various dry (plasma) etch and wet etch chemistries were evaluated for etching ZrO2 using both blanket films as well as wafers with patterned poly-Si gate over the high-k films. On the full CMOS flow device wafers, most of these wet chemistries resulted in severe pitting in the ZrO2 film remaining over the source/drain (S/D) areas, as well as in the Si substrate and the field oxide. A poly-Si gate over ZrO2 gate dielectric film was successfully patterned using the standard poly-Si gate etch (Cl2/HBr) for the main etch, followed by a combination of HF and H2SO4 clean for removing all of the ZrO2 remaining over the S/D area. This allowed the fabrication of low-resistance contacts to transistor S/D areas, which ultimately resulted in demonstration of functional transistors with high-k gate dielectric films.