OBJECTIVES/GOALS: We compared the validity of an International Classification of Diseases, Clinical Modification (ICD) algorithm for identifying high-grade cervical intraepithelial neoplasia and adenocarcinoma in situ (together referred to as CIN2+) from ICD 9th revision (ICD-9) and 10th revision (ICD-10) codes. METHODS/STUDY POPULATION: Using Tennessee Medicaid data, we identified cervical diagnostic procedures in 2008-2017 among females aged 18-39 years in Davidson County, TN. Gold-standard cases were pathology-confirmed CIN2+ diagnoses validated by HPV-IMPACT, a population-based surveillance project in catchment areas of five US states. Procedures in the ICD transition year (2015) were excluded to account for implementation lag. We pre-grouped diagnosis and procedure codes by theme. We performed feature selection using least absolute shrinkage and selection operator (LASSO) logistic regression with 10-fold cross validation and validated models by ICD-9 era (2008-2014, N = 6594) and ICD-10 era (2016-2017, N = 1270). RESULTS/ANTICIPATED RESULTS: Of 7864 cervical diagnostic procedures, 880 (11%) were true CIN2+ cases. LASSO logistic regression selected the strongest features of case status: Having codes for a CIN2+ tissue diagnosis, non-specific CIN tissue diagnosis, high-grade squamous intraepithelial lesion, receiving a cervical treatment procedure, and receiving a cervical/vaginal biopsy. Features of non-case status were codes for a CIN1 tissue diagnosis, Pap test, and HPV DNA test. The ICD-9 vs ICD-10 algorithms predicted case status with 68% vs 63% sensitivity, 95% vs 94% specificity, 63% vs 64% positive predictive value, 96% vs 94% negative predictive value, 92% vs 89% accuracy, and C-indices of 0.95 vs 0.92, respectively. DISCUSSION/SIGNIFICANCE OF IMPACT: Overall, the algorithm’s validity for identifying CIN2+ case status was similar between coding versions. ICD-9 had slightly better discriminative ability. Results support a prior study concluding that ICD-10 implementation has not substantially improved the quality of administrative data from ICD-9.

The first study of the TiW nitrides (TiWNx) as the Schottky contact metals to the n type Ga0.51In0 49P has been made. The Ga0.51 In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNx Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.

Thermal stability of the Schottky contacts on Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. In this paper, materials aspects of the Ga0.51In0.49P layers were characterized and thermal stability of three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi2, W5Si3, PtSi, and Pt2i), and TiW nitrides (TiWNx ) as the Schottky contacts materials on Ga0.51In0.49P were studied. Due to the high bandgap nature of Ga0.51In0.49P, the Schottky contacts on Ga0.51In0.49P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the materials and the annealing conditions. For single-metal contacts, Pt film shows the best thermal stability, the barrier height of 1.09 eV and the ideality factor of 1.06 were obtained for the Pt Schottky diode with furnace annealing at 500 °C for 30 min. For refractory compound films, the TiWNx film shows the best thermal stability. The TiWNx Schottky contacts demonstrate excellent electrical as well as physical characteristics, even after high temperature annealing at 850°C.