Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

We have used in situ electron microscopy to observe the nucleation of Ge islands on lithographically patterned Si(001) mesas. Images were obtained at video rate during chemical vapor deposition of Ge, using a reflection electron microscopy geometry that allows nucleation to be observed over large areas. By comparing the kinetics of nucleation and coarsening on substrates modified by different annealing conditions, we find that the final island arrangement depends on the nature of the mesa sidewalls, and we suggest that this may be due to changes in diffusion of Ge across the nonplanar surface.

The rate of heteroepitaxial strain relaxation via misfit dislocation introduction is strongly limited by the kinetics of dislocation nucleation, propagation and interaction. Here we describe real-time observations of the interaction between moving threading dislocations and pre-existing interfacial misfit dislocations using in-situ transmission electron microscopy. This was accomplished both during in-situ observations of the heteroepitaxial growth process using a modified ultrahigh vacuum TEM (UHV-TEM) equipped with chemical vapor deposition capabilities, as well as during in-situ anneals of metastable structures grown by molecular beam epitaxy.

In Figure 1, we present our UHV-TEM observations of the epilayer thicknesses and compositions at which dislocation interactions result in blocking of the propagating threading segment, and compare these with the theoretical predictions of Freund and those of Schwarz and Tersoff. Our results show that dislocation blocking can significantly affect the overall rate of strain relaxation in these structures. This is important, as blocked threading segments introduce undesired band gap states into electronic devices and can act as easy diffusion paths for impurities and dopants.

We describe here real-time, in situ observations of the formation of nanosize germanium (Ge) islands on silicon (Si). The deposition of Ge onto electron-transparent Si(100) takes place in a UHV transmission electron microscope that has been modified to allow chemical vapor deposition to be carried out in the polepiece. We recorded the growth process at video rate and were therefore able to follow the evolution of individual islands. As the islands grew, we observed a coarsening process similar to classical Ostwald ripening, but which leads at certain times to a bimodal distribution of island sizes. We show that this phenomenon can be understood using a model in which a conventional coarsening process is modified by a transition between two different island shapes.

The structure of 2.8 – 60nm thick films of CoCrTa sputtered onto a 50nm Cr underlayer at 250°C was studied using atomic resolution microscopy. The Cr grows with a (200) orientation and the CoCrTa grows epitaxially with the [0002] axis in the film plane. The thinnest films have a discontinuous microstructure with several CoCrTa nuclei forming on each Cr grain, with slight misalignment from the exact Pitsch-Schrader orientation relation. The CoCrTa grains coalesce as the film thickness exceeds lOnm and there is evidence for stacking faults at all film thicknesses. For most films the magnetic switching volumes are of similar size to the physical grain volume, suggesting that the entire grain volume participates in magnetic switching.

Recently there has been a paradigm shift in nonvolatile computer memories from silicon-technology-based EEPROMs (electrically erasable, programmable read-only memories) to devices in which the stored information is coded into + and − polarizations in thin-film ferroelectric capacitors. Such devices have read and erase/rewrite speeds of the order of 1–35 ns, many orders of magnitude faster than the erase/rewrite speeds of the best EEPROMs (Table I). However, fundamental questions concerning their lifetimes had delayed full commercialization. Because ferroelectrics normally have extremely large dielectric constants, their use as nonswitching capacitors in dynamic random-access memories (DRAMs) is also rapidly evolving. The majority of studies to date have emphasized lead zirconate titanate (PZT)-based capacitors for nonvolatile ferroelectric random-access memories (NVFRAMs) and barium strontium titanate-based capacitor DRAMs (see Table II).

The transmission electron microscope (TEM) is one of the most useful tools available to the materials scientist. Yet both the complexity and expense of the equipment, and the huge investment in time necessary to become proficient in specimen preparation and image acquisition and analysis, mean that it is difficult for most industrial institutions to maintain a state-of-the-art TEM facility. How can industry overcome this problem? One solution is to set up a collaboration with a university, an industrial partner, or a government research laboratory. Such collaborations can be extremely valuable to the company, which gains access to microscopes, specimen-preparation equipment and the expertise of professional microscopists, and to the research laboratory, which benefits from the industrial perspective and the private sector's proficiency in materials preparation and processing.

Such collaborations exist, and they can produce excellent results. In this article, we present three case studies in which successful collaboration has occurred between industry and one of the Department of Energy's scientific user facilities, the National Center for Electron Microscopy (NCEM-see sidebar). Our aim is not only to describe results that we hope will be of scientific interest but also to encourage industrial researchers to consider collaborations with institutes such as NCEM.