Although family factors are considered important for children’s language acquisition, the evidence comes primarily from affluent societies. Thus, this study aimed to examine the relations between family factors (family’s socioeconomic status [SES], home literacy activities, access to print resources, and parental beliefs) and children’s vocabulary knowledge in both urban and rural settings in China. Data from 366 children (urban group: 109, 4.85 years; rural group: 257, 4.89 years) were collected. Results showed that whereas family’s SES significantly predicted access to print resources and children’s vocabulary knowledge in the rural group, parental beliefs directly predicted children’s vocabulary knowledge in the urban group. Multigroup analysis showed that the associations of family’s SES and access to print resources with children’s vocabulary knowledge were stronger in the rural group than in the urban group. Our findings highlight the importance of considering contextual settings when conceptualising the role of family factors in children’s language acquisition.

As children advance through school, derived words become increasingly common in their reading materials. Previous studies have shown that children’s knowledge of derivational morphology develops relatively slowly, but there is more to learn about this development. This study examined differences in knowledge of the form and meaning of suffixes across grade levels (Grades 3, 5, and 8) and different types of derivational suffixes (adjectives and nominals). We assessed 309 English-speaking children on word reading and receptive vocabulary tests and two tasks designed to assess the form (orthographic knowledge) and meaning (semantic knowledge) of 28 derivational suffixes (14 adjectives and 14 nominals). Overall, our findings showed a significant improvement in identifying and understanding derivational suffixes from Grade 3 to Grade 5 and a smaller, but still significant, improvement from Grade 5 to Grade 8. Our findings regarding suffix types were mixed. While written forms of adjectives were identified more accurately than nominals across all grades, this advantage did not extend to the students’ understanding of the meaning of the suffixes. These results highlight the distinction between the identification of suffixes and the understanding of their meaning. We discuss our results in relation to suffix frequency in children’s reading materials.

The purpose of this study was to examine the early growth of morphological awareness and its predictors. We followed 172 English-speaking Canadian children (82 girls, 90 boys, Mage = 75.56 months at the first assessment point) from Grade 1 to Grade 3 and assessed them on nonverbal IQ, phonological short-term memory, phonological awareness, letter knowledge, and vocabulary at the beginning of Grade 1 and on morphological awareness at the end of Grade 1, beginning and end of Grade 2, and beginning of Grade 3. Results of growth curve modeling showed different growth patterns for Word Analogy and Sentence Analogy. In addition, vocabulary and phonological awareness were associated with the initial status of morphological awareness, and phonological awareness and letter knowledge predicted the growth rate of morphological awareness. These findings suggest that code-related skills drive the development of morphological awareness during the early years of literacy instruction.

We examined the growth trajectories of reading in a consistent orthography (Greek) in two developmental periods (from Grade 1 to Grade 4 and from Grade 4 to Grade 10) and what cognitive skills predict the growth patterns. Seventy-five Greek-speaking children were assessed in Grades 1, 2, 4, 6, and 10 on word-, nonword-, and text-reading fluency. In Grades 1 and 4, they were also assessed on phonological awareness, rapid naming, phonological memory, orthographic knowledge, and articulation rate. Results of growth curve modeling showed that during the first developmental period, there was a rapid initial growth from Grade 1 to Grade 2 followed by a less rapid growth from Grade 2 to Grade 4. In the second developmental period, the slow growth continued. In both developmental periods, rapid naming and orthographic knowledge predicted the initial status of all reading outcomes and phonological memory predicted the initial status of nonword-reading fluency. Phonological awareness predicted the initial status of nonword-reading fluency in the first developmental period and the initial status of word- and text-reading fluency in the second developmental period. None of the cognitive skills predicted the growth rate in reading skills. Theoretical and practical implications of these findings are discussed.

We examined the cross-lagged relations between word reading fluency in the two orthographic systems of Japanese: phonetic (syllabic) Hiragana and morphographic Kanji. One hundred forty-two Japanese-speaking children were assessed on word reading fluency twice in Grade 1 (Times 1 and 2) and twice in Grade 2 (Times 3 and 4). Nonverbal IQ, vocabulary, phonological awareness, morphological awareness, and rapid automatized naming were also assessed in Time 1. Results of path analysis revealed that Time 1 Hiragana fluency predicted Time 2 Kanji fluency after controlling for the cognitive skills. Time 2 Hiragana fluency did not predict Time 3 Kanji fluency or vice versa after the autoregressor was controlled, but Hiragana and Kanji fluency were reciprocally related between Times 3 and 4. These findings provide evidence for a cross-script transfer of word reading fluency across the two contrastive orthographic systems, and the first evidence of fluency in a morphographic script predicting fluency development in a phonetic script within the same language.

For CdTe there is no real distinction between defects and impurities exists when non-shallow dopants are used. These dopants act as beneficial impurities or detrimental carrier trapping centers. Unlike Si, the common assumption that the trap energy level Et is around the middle of the band-gap Ei, is not valid for thin film CdTe. Trap energy levels in CdTe band-gap can distributed with wide range of energy levels above EF. To identify the real role of traps and dopants that limit the solar cell efficiency, a series of samples were investigated in thin film n+-CdS/p-CdTe solar cell, made with evaporated Cu as a primary back contact. It is well known that process temperatures and defect distribution are highly related. This work investigates these shallow level impurities by using temperature dependent current-voltage (I-V-T) and temperature dependent capacitance-voltage (C-V-T) measurements. I-V-T and C-V-T measurements indicate that a large concentration of defects is located in the depletion region. It further suggests that while modest amounts of Cu enhance the cell performance by improving the back contact to CdTe, the high temperature (greater than ∼100°C) process condition degrade device quality and reduce the solar cell efficiency. This is possibly because of the well-established Cu diffusion from the back contact into CdTe. Hence, measurements were performed at lower temperatures (T = 150K to 350K). The observed traps are due to the thermal ionization of impurity centers located in the depletion region of p-CdTe/n+-CdS junction. For our n+-CdS/p-CdTe thin film solar cells, hole traps were observed that are verified by both the measurement techniques. These levels are identical to the observed trap levels by other characterization techniques.