Precise instrumental calibration is of crucial importance to 21-cm cosmology experiments. The Murchison Widefield Array’s (MWA) Phase II compact configuration offers us opportunities for both redundant calibration and sky-based calibration algorithms; using the two in tandem is a potential approach to mitigate calibration errors caused by inaccurate sky models. The MWA Epoch of Reionization (EoR) experiment targets three patches of the sky (dubbed EoR0, EoR1, and EoR2) with deep observations. Previous work in Li et al. (2018) and (2019) studied the effect of tandem calibration on the EoR0 field and found that it yielded no significant improvement in the power spectrum (PS) over sky-based calibration alone. In this work, we apply similar techniques to the EoR1 field and find a distinct result: the improvements in the PS from tandem calibration are significant. To understand this result, we analyse both the calibration solutions themselves and the effects on the PS over three nights of EoR1 observations. We conclude that the presence of the bright radio galaxy Fornax A in EoR1 degrades the performance of sky-based calibration, which in turn enables redundant calibration to have a larger impact. These results suggest that redundant calibration can indeed mitigate some level of model incompleteness error.

A single LaMnO3 buffer layer was developed for the growth of superconducting thick YBa2Cu3O7−δ (YBCO) films on polycrystalline Ni-alloy substrates where a biaxially textured MgO layer, produced by ion-beam assisted deposition (IBAD), was used as a template. Using pulsed laser deposition, a 1.65-μm-thick YBCO film with a critical current density of 1.4 × 106 A/cm2 in self field at 75 K was achieved on sputtered LaMnO3-buffered IBAD MgO substrates. This corresponds to a critical current (Ic) of 231 A/cm-width. This result demonstrates the possibility of using both LaMnO3 buffer and IBAD MgO template for producing high current density YBCO-coated conductors.

High critical current density (high-Jc) YBa2Cu3O7–δ (YBCO) films were obtained by pulsed laser ablation on biaxially textured Cu substrates. To achieve epitaxy of LaMnO3 (LMO) on Cu, thin epitaxial Ni overlayers were deposited on Cu tapes. The structure comprises the layer sequence of YBCO/LMO/Ni/Cu. For 200-nm-thick YBCO, self-field Jc values exceeding 1 × 106 A/cm2 at 77 K were achieved. Characterization of these short prototype conductors revealed good structural and morphological properties. Magnetic analysis suggested that hysteretic loss due to the ferromagnetic Ni overlayer is minimal.

Compositionally asymmetric tri-color superlattices (TCS) with a combination of BaTiO3/SrTiO3/CaTiO3 have been grown by pulsed laser deposition (PLD) on atomically-flat SrRuO3-covered (001) SrTiO3 substrates. Conducting SrRuO3 films with single-terrace steps that closely mimic those of the SrTiO3 substrate also were grown by PLD and serve as bottom electrodes. In order to achieve atomic control of each layer, we have calibrated precisely the number of laser pulses required to grow one unit-cell-thick layers (∼200 for a laser spot of 0.4 mm2). These conditions allowed recording of pronounced oscillations of the reflection high-energy electron diffraction (RHEED) specular spot intensity over the entire growth run - even for TCS layers totaling more than 1000 nm in total thickness.

The electrical activity of iron in Fe- doped, and in Si and Mg co-doped GaN layers grown on sapphire substrates by metal organic vapor phase epitaxy was studied as shown by temperature dependent Hall Effect (TDH) measurements. In all samples iron doping generates an acceptor defect, which compensates donors in n-type GaN. Furthermore, iron doping causes strong potential inhomogeneities, which decrease the Hall mobility in the layers. To verify, if iron creates only hole traps, defects in n-type Si:Fe and Fe doped samples were investigated. The well known dominant electron traps in n-type GaN at 520 – 550 meV and 480 meV were found by deep level transient spectroscopy and thermal admittance spectroscopy, respectively. A high Fe-doped GaN layer shows a low p-type conductivity dominated by the iron acceptor. An activation energy of EV+ 460 meV was determined by TDH indicating, that the iron acceptor correlates with this defect level.

Single, epitaxial buffer layers of insulating LaMnO3 (LMO) or conductive La0.7Sr0.3MnO3 (LSMO) have been grown by sputter deposition on biaxially textured Ni and Ni–alloy substrates. We report baseline investigations of their compatibility with the Yba2Cu3O7−δ (YBCO) coatings and demonstrate biaxially textured YBCO films grown by pulsed-laser deposition on these single-buffered tapes. Superconducting property characterizations revealed better properties for YBCO films on LMO-buffered tapes relative to those grown on LSMO layers. Self-field critical current densities (Jc) exceeding 1 × 106 A/cm2 at 77 K have been obtained for the YBCO (200 nm) films on LMO-buffer layers. These results offer prospects for the use of single, LMO-buffered metal tapes in the development of practical YBCO-coated conductors.

A single layer of La2Zr2O7 (LZO), deposited on textured Ni and Ni–1.7% Fe–3% W (Ni–W) tapes by a low-cost sol-gel process, is used as buffer layer for the growth of YBa2Cu3O7−δ (YBCO) coated conductors. It is shown for the first time that such single buffer layers can be used for the deposition of YBCO yielding critical current densities (Jc) that are comparable to those typically obtained using CeO2/YSZ/Y2O2 trilayers on identical substrates, i.e., in excess of 1 MA/cm2 at 77 K and self-field. The properties of the YBCO films and the dependence of Jc on thickness of the LZO layer are investigated.

The dielectric response in artificially layered 1x1 KTaO3/KNbO3 perovskite superlattice structures is reported. While KTaO3 and KNbO3 are ferroelectric or paraelectric, respectively, superlattices appear antiferroelectric based on an increase in dielectric constant with applied dc bias. This “positive tunability” in dielectric response occurs at the same temperature region where a structural phase transition is observed. This dielectric behavior is inconsistent with the nonlinear response for either paraelectric or ferroelectric materials. However, an increase in the dielectric constant with applied electric field is consistent with antiferroelectric behavior. The antiferroelectric ordering correlates with cation modulation imposed by the superlattice.

The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ˜38.8 K and those from in situ anneal with Tc0 ˜24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.

In an effort to develop alternative single buffer layer technology for YBa2Cu3O7-δ (YBCO) coated conductors, we have investigated LaMnO3 (LMO) as a potential buffer layer. High-quality LMO films were grown directly on biaxially textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. YBCO films were then grown on LMO buffers using pulsed laser deposition. Detailed X-ray studies have shown that both YBCO and LMO layers were grown with a single epitaxial orientation. Rutherford backscattering spectroscopy (RBS) analyses have indicated the ratio of La to Mn ratio is 1:1. SEM micrographs indicated that 3000-Å-thick LMO films on biaxially textured Ni (100) substrates were dense, continuous and crack-free. A high Jc of over 1 MA/cm2 at 77 K and self-field was obtained on YBCO films grown on LMO-buffered Ni or Ni-W substrates. We have identified LaMnO3 as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films.

The use of magnesium diboride in superconducting magnets, transmission lines, or other large-scale applications depends on the transport-current characteristics of this material in magnetic field, and how they compare to the properties of conventional and high-temperature superconductors. Thin films of boron grown on sapphire substrates during electron-beam evaporation were exposed to Mg vapor to produce 0.5-μm thick layers of the metallic compound MgB2. Four-terminal measurements of their voltagecurrent relations, E(J), were carried out before and after exposure to Bφ =1-T and higher doses of 1-Gev U ions. These doses lowered critical temperatures Tc≈39 K less than 0.1 degree, raised the normal-state resistivity, and reduced the loss-free critical current density, Jc. Higher doses added little. The reduction of current densities was greater in the presence of applied magnetic field greater than 0.1 T.

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni-3 at.% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effect of increasing the annealing speed on the texture, microstructure and the carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of Yttria Stabilized Zirconia (YSZ) and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using Pulsed Laser Deposition (PLD). A critical current density (Jc) of 1.9 MA/cm2 at 77K and self-field and 0.34 MA/cm2 at 77K and 0.5T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers, and are the highest ever obtained using solution seed layers. The use of all-solution buffers for coated conductor processing has also been explored. A critical current density of 1.1 MA/cm2 at 77 K and self-field was obtained on YBCO films grown be PLD on LZO buffered nickel substrates.

The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. A buffer layer architecture of strontium titanate and ceria have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with high critical current density values. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm2. Work is currently in progress to combine both the buffer layer and superconductor technologies to produce high-quality coupons of HTS tape made entirely by the non-vacuum CCVD process.

We present a study of the {100}<100> biaxially textured Ni (001) surface and oxide seed layer nucleation by in situ reflection high-energy electron diffraction and Auger electron spectroscopy. Our observations revealed the existence of a c(2×2) superstructure on the textured Ni surface due to segregation of sulfur contained in the bulk metal. The sulfur superstructure promotes the epitaxial (002) nucleation of seed layers such as Y2O3-stabilized ZrO2 (YSZ) and CeO2 on the metal and optimizes the biaxial texture necessary for high Jc superconductors on RABiTS.

We report the fabrication and superconducting properties of ∼0.5 μm thick, fine-grained polycrystalline coatings of MgB2 on single-crystal substrate surfaces. The films exhibit large critical current densities, implying little effect from the grain boundaries. Analyses for thermal activation effects are inconclusive, and evidence is presented that the irreversibility line is dominated by the combined influences of Hc2 anisotropy and polycrystallinity. Comparative studies of the magnetic persistent currents and electrical transport properties reveal excellent agreement over a wide range of temperature and magnetic field. This result is contrary to similar comparisons on high-temperature cuprates, where disparities arise from the effects of large flux creep and the diverse electric field regimes probed by the two techniques. The MgB2 films exhibit extremely sharp voltage-current relations away from the irreversibility line, in qualitative agreement with observed large Jc values and low rates of magnetic flux creep.

Foix–Chavany–Marie syndrome (FCMS) is a distinct clinical picture of suprabulbar (pseudobulbar) palsy due to bilateral anterior opercular lesions. Symptoms include anarthria/severe dysarthria and loss of voluntary muscular functions of the face and tongue, and problems with mastication and swallowing with preservation of reflex and autonomic functions. FCMS may be congenital or acquired as well as persistent or intermittent. The aetiology is heterogeneous; vascular events in adulthood, nearly exclusively affecting adults who experience multiple subsequent strokes; CNS infections; bilateral dysgenesis of the perisylvian region; and epileptic disorders. Of the six cases reported here, three children had FCMS as the result of meningoencephalitis, two children had FCMS due to a congenital bilateral perisylvian syndrome, and one child had intermittent FCMS due to an atypical benign partial epilepsy with partial status epilepticus. The congenital dysgenetic type of FCMS and its functional epileptogenic variant share clinical and EEG features suggesting a common pathogenesis. Consequently, an increased vulnerability of the perisylvian region to adverse events in utero is discussed. In honour of Worster-Drought, who described the clinical entity in children 40 years ago, the term Worster-Drought syndrome is proposed for this unique disorder in children.

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects detected by thermal admittance spectroscopy as compared for deep level transient spectroscopy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects de-tected by thermal admittance spectroscopy as compared for deep level transient spectros-copy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.