A nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.

A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

An ultra high vacuum (UHV) scanning electron microscope (SEM) combined with a scanning tunneling microscope (STM) has been designed and constructed to solve problems, arising from STM surface imaging and nanofabrication using STM tips, such as difficulty in probe tip location and change in tip shape. The system facilitates to image and/or to modify a wide range of area from submicron down to subnanometer. A ZrO/W thermal emitter in a Schottky mode has been used for an electron gun to obtain a low energy spread with a high angular current density. Minimum beam spot diameters of 6 and 12 nm with currents of 100 pA and 4 nA are estimated by optical property calculation for high resolution (SEM) and high current (fabrication) modes, respectively.