In this report, the effect of sputtering target microstructure on the deposited film stress was investigated. By controlling the metallurgical process, two types of W-10wt%Ti target constituents, namely single-phase and multiple-phase WTi, were prepared. The former one was composed of W-rich (βTi,W) phase only, the latter one was with W, W-rich (βTi,W) and Ti-rich (βTi,W) phases. The stress of the films deposited on 12.7 cm diameter silicon oxide wafers from the single-phase target tends to be more compressive than that from the multiple-phase target. By increasing wafer temperature, the compressive stress was linearly decreased. In addition, the level of film stress was also affected by the film thickness and other sputtering parameters. To understand the causes for the differences in film stress between the multiple-phase and singlephase derived films, an evaluation of the film structure using a field-emission scanning electron microscope (FE-SEM) and mechanical testing using a nano-indentation instrument were performed. Finer domains with denser laminar structure were observed on the films deposited from the single-phase target. However, no significant difference in mechanical properties was found between these two from the nano-indentation measurements. It is envisioned that the more uniform solid solution between the W and Ti in the films obtained by sputtering the single-phase targets generates a higher compressive stress when deposited on the silicon oxide wafers resulting in a higher compressive stress.