The proton–boron ${}^{11}{\text{B}}\left( {p,\alpha } \right)2\alpha $ reaction (p-11B) is an interesting alternative to the D-T reaction ${\text{D}}\left( {{\text{T}},{\text{n}}} \right)\alpha $ for fusion energy, since the primary reaction channel is aneutronic and all reaction partners are stable isotopes. We measured the α production yield using protons in the 120–260 keV energy range impinging onto a hydrogen–boron-mixed target, and for the first time present experimental evidence of an increase of α-particle yield relative to a pure boron target. The measured enhancement factor is approximately 30%. The experiment results indicate a higher reactivity, and that may lower the condition for p-11B fusion ignition.

Here, we report the generation of MeV alpha-particles from H-11B fusion initiated by laser-accelerated boron ions. Boron ions with maximum energy of 6 MeV and fluence of 109/MeV/sr@5 MeV were generated from 60 nm-thick self-supporting boron nanofoils irradiated by 1 J femtosecond pulses at an intensity of 1019 W/cm2. By bombarding secondary hydrogenous targets with the boron ions, 3 × 105/sr alpha-particles from H-11B fusion were registered, which is consistent with the theoretical yield calculated from the measured boron energy spectra. Our results demonstrated an alternative way toward ultrashort MeV alpha-particle sources employing compact femtosecond lasers. The ion acceleration and product measurement scheme are referential for the studies on the ion stopping power and cross section of the H-11B reaction in solid or plasma.

Tungsten oxide comblike nanostructures were synthesized using a two-step thermal evaporation method. The first step involving high reactor pressure and temperature was to synthesize the cores of the comb structures, upon which the teeth of the comb were grown in the second step using low operation pressures and temperatures. The teeth of the comb structure are well aligned and vertical to the side surfaces of the cores. The effects of growth parameters were examined, and the growth mechanism was investigated.

The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.

The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.