Background: Data on antimicrobial use at the national level is crucial to establish domestic antimicrobial stewardship policies and enable medical institutions to benchmark against each other. This study aimed to analyze antimicrobial use in Korean hospitals. Methods: We investigated the antimicrobials prescribed in Korean hospitals between 2018 and 2021, using data from the Health Insurance Review and Assessment. Primary care hospitals (PCHs), secondary care hospitals (SCHs), and tertiary care hospitals (TCHs) were included in this analysis. Antimicrobials were categorized according to the Korea National Antimicrobial Use Analysis System (KONAS) classification, which is suitable for measuring antimicrobial use in Korean hospitals. Results: Out of more than 1,900 hospitals, PCHs and TCHs represented the largest and lowest percentage of hospitals, respectively. The most frequently prescribed antimicrobial in 2021 was piperacillin/β-lactamase inhibitor (9.3%) in TCHs, ceftriaxone (11.0%) in SCHs, and cefazedone (18.9%) in PCHs. Between 2018 and 2021, the most used antimicrobial class according to the KONAS classification was ‘broad-spectrum antibacterial agents predominantly used for community-acquired infections’ in TCHs and SCHs, and 'narrow spectrum beta-lactam agents' in PCH. Total consumption of antimicrobials has decreased from 951.7 to 929.9 days of therapy (DOT)/1,000 patient-days in TCHs and from 817.8 to 752.2 DOT/1,000 patient-days in SCHs during study period, but not in PCHs (from 504.3 to 527.2 DOT/1,000 patient-days). Moreover, in 2021, while use of reserve antimicrobials has decreased from 13.6 to 10.7 DOT/1,000 patient-days in TCHs and from 4.6 to 3.3 DOT/1,000 patient-days in SCHs, it has increased from 0.7 to 0.8 DOT/1,000 patient-days in PCHs. Conclusion: This study confirms that antimicrobial use differs by hospital type in Korea. Recent increases of use of antimicrobials, including reserve antimicrobials, in PCHs reflect the challenges that must be addressed.

A total of 27 accessions from ten Vicia species were investigated for flavonoid contents, total polyphenol contents, and DPPH (2,2-diphenyl-1-picrylhydrazyl) and ABTS [2,2′-azinobis(3-ethylbenzothiazoline 6-sulfonic acid)] free radical-scavenging activities. The results revealed that NAC17 (V. monantha) and NAC14 (V. hyrcanica) had the highest total flavonoid content (1.42 ± 0.09 mg/g) and total polyphenol content [124.2 ± 0.5 μg/gallic acid equivalents (GAE) mg], respectively. Among four flavonoids, naringenin was detected at high concentrations in Vicia species. The DPPH and ABTS assays showed values in the range of 57.2 (IC50) (NAC13, V. faba) to 6530.0 (IC50) (NAC24, V. sativa subsp. nigra) and 19.1 μg/Trolox mg (NAC7, V. cracca) to 253.4 μg/Trolox mg (NAC13, V. faba), respectively. Among ten Vicia species, V. monantha and V. hyrcanica had the highest flavonoid content (1.31 ± 0.09 mg/g) and total polyphenol content (116.5 ± 2.0 μg/GAE mg), respectively. The highest antioxidant activity was detected in V. faba. These results will expand the flavonoid database and provide valuable information on Vicia species for the development of functional foods or feed-additive resources.

Improved root architecture of cultivated barley can improve crop performance in drought-prone areas. In this study, seedlings of 315 wild barley (Hordeum vulgare subsp. spontaneum) accessions from the Wild Barley Diversity Collection (WBDC) were grown under hydroponic conditions for 8 d after germination and then root characteristics were analysed. Significant differences were observed among the accessions with regard to seminal root number (SRN), root length (RL), specific root length (SRL), root fresh weight and root dry weight (RDW). Principal component analysis explained about 81% of the total variation for ten traits. Principal component (PC) 1, PC2 and PC3 explained about 38, 30 and 13% of the total variation among the accessions. The two most prominent contributors in each PC were RL and SRL, RDW and SRN, and the longitude and latitude of the collection sites, respectively. Accessions WBDC266, WBDC302, WBDC286 and WBDC011 had the longest RL and the highest RDW, specific dry root weight and SRL, respectively. These accessions may be useful genetic resources for the improvement of these root traits in cultivated barley.

The growth of high-quality indium (In)-rich InXGa1−XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1−XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1−XN layers. Composition modulations were observed in the In-rich InXGa1−XN layers with various In compositions. The In composition modulation in the InXGa1−XN alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In0.67Ga0.33N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.

The hardness changes caused by formation of the metastable and stable phases were examined and correlated with the microstructural changes in grain interior and grain boundary during aging at 350 °C to clarify the age-hardening and softening mechanism of a low-gold Au-Cu-Ag-Pd dental alloy. Aging in this context refers to the time-delay that occurs wherein such alloys are kept at elevated temperatures for periods upto many hours to allow precipitation or ordering to take place. During the period of increasing hardness, the matrix was separated into the Ag-rich α1 and AuCu I phases through the metastable phases, forming block-like structure. The apparent hardening was attributed primarily to lattice strain due to the tetragonality of AuCu I′ [the primer (′) here indicates a metastable phase; likewise (I) and (I′) indicate stable AuCu I and metastable AuCu I′ phases, respectively] and AuCu I phases along the c-axis, secondarily to the coherency or semicoherency strain between the metastable α1′ and AuCu I′ phases and between the α0 and AuCu I phases along the a-axis. The apparent softening was caused primarily by growth and coarsening of the lamellar structure in the grain boundaries, secondarily by coarsening of the block-like structure in the grain interior.

Ferromagnetic Cu-doped GaN film was grown on a GaN-buffered sapphire (0001) substrate by a hybrid physical-chemical-vapor-deposition method (HPCVD). The GaCuN film (Cu: 3.6 at.%) has a highly c-axis-oriented hexagonal wurtzite crystal structure, which is similar to GaN buffer but without any secondary phases such as metallic Cu, CuxNy, and CuxGay compounds. Two weak near-band edge (NBE) emissions at 3.38 eV and donor-acceptor-pair (DAP) transition at 3.2 eV with a typical strong broad yellow emission were observed in photoluminescence spectra for GaN buffer. In contrast, the yellow emission was completely quenched in GaCuN film because Ga vacancies causing the observed yellow emission in undoped GaN were substituted by Cu atoms. In addition, GaCuN film exhibits a blue shift of NBE emission, which could be explained with the +2 oxidation state of Cu ions, replacing +3 Ga ions resulting in band gap increment. The valance sate of Cu in GaCuN film was also confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The GaCuN film shows ferromagnetic ordering and possesses a residual magnetization of 0.12 emu/cm3 and a coercive field of 264 Oe at room temperature. The unpaired spins in Cu2+ ions (d9) are most likely to be responsible for the observed ferromagnetism in GaCuN.

In a crystallographic study of stress induced voiding of copper interconnect, the planar electron backscattered diffraction analysis showed that the void was initiated at the triple junction of the grain boundaries, not at the junction of the twin boundary and grain boundary. By using stepwise cross-sectional crystalline investigation for the void, it was possible to rebuild 3D crystalline structure near the void. From the stress calculation based on the measured crystalline structures, the hydrostatic stress was highly concentrated at the triple junction of the twin boundary and grain boundary, but experimentally, there was no voiding at that. The voiding in the copper interconnect may depend mainly on the boundary instability.

ZnO nanowires (NWs) were fabricated on Au coated sapphire (0001) substrates by using a pulsed laser deposition (PLD) system in vacuum furnace with a Q-switched Nd:YAG laser. ZnO NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. Scanning electron microscopy (SEM) images indicate that the diameters of ZnO NWs ranged from 100 to 150 nm and the average length was greater than 3 μm. Room-temperature photoluminescence spectra of the NWs show the near band-edge emissions and the deep-level green light emissions. The formation mechanism of the NWs is discussed.

The strain relaxation mechanism via the homogeneous nucleation of misfit dislocations from interface during interdiffusion in lattice-matched semiconductor heterostructures has been investigated. Transmission electron microscopy studies in intermixed GaInAsP/InP heterostructures revealed that the critical interdiffusion depth for the nucleation of 90° 1/6<112> partial dislocations from a tensile interface is much shallower than that of 60° 1/2<110> perfect dislocations from a compressive interface. A critical thickness model for the interface nucleation of these dislocations is developed as a modification of the classical surface nucleation'model.

Prior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.

The microstructural degradation of a lattice-matched Ga0.28 In0.72As0.61P0.39/InP heterointerface during atomic intermixing induced by Zn diffusion has been investigated using high-resolution transmission electron microscopy and Auger electron spectroscopy. The localized interfacial stress caused by intermixing appears to create stacking faults in the Ga-mixed InP substrate, and dislocation tangles in the In-mixed GalnAsP layer. The results are attributed to the contrasted effect of tensile and compressive stresses upon the nucleation of partial dislocations from both sides of the intermixed interface. A qualitative model is proposed for the homogeneous nucleation of misfit dislocations from the locally stressed interface.