As astroviral infection rapidly increased in the summer of 2022 in Korea, this study aimed to determine the cause and genotype of astroviruses during this period. From January to December 2022, we tested 43,312 stool samples from patients with acute gastroenteritis utilizing multiplex PCR to detect HAstV. For the HAstV-positive samples, we determined the genotypes of the HAstVs by PCR and sequencing. The monthly positive rate from 2015 to 2022 showed a notable and abrupt increase of HAstV infection between June and August 2022, peaking at 9.8% in July 2022. The annual positivity rate of HAstV remained at 2–3% between 2015 and 2019, and then decreased to 0.5% in 2020, followed by an increase to 1.5% in 2021 and 3.6% in 2022.The genotyped astroviruses in 2022 were all identified as HAstV-1 type, and the nucleotide identity% among them was >99%. The GenBank accession number for the strain genetically closest to the strains identified in our study was ON571597.1, which was HAstV-1 isolated from Pingtan in 2019. Our results provide recent epidemiological data on HAstVs in Korea. The decline and surge in astrovirus positivity in recent years may be related to the COVID-19 pandemic.

In this review, we introduce our recent applications of deep learning to solar and space weather data. We have successfully applied novel deep learning methods to the following applications: (1) generation of solar farside/backside magnetograms and global field extrapolation based on them, (2) generation of solar UV/EUV images from other UV/EUV images and magnetograms, (3) denoising solar magnetograms using supervised learning, (4) generation of UV/EUV images and magnetograms from Galileo sunspot drawings, (5) improvement of global IRI TEC maps using IGS TEC ones, (6) one-day forecasting of global TEC maps through image translation, (7) generation of high-resolution magnetograms from Ca II K images, (8) super-resolution of solar magnetograms, (9) flare classification by CNN and visual explanation by attribution methods, and (10) forecasting GOES solar X-ray profiles. We present major results and discuss them. We also present future plans for integrated space weather models based on deep learning.

A systematic study on the effect of sputtering deposition parameters on material properties of Al doped ZnO (ZnO:Al) films prepared by an in-line rf magnetron sputtering and on surface morphology of the films after wet etching process was carried out. For application to silicon thin film solar cells as a front electrode, the as-deposited films were surface-textured by a dilute HCl solution to improve the light scattering properties such as haze and angle resolved distribution of scattered light on the film surfaces. The microstructure of as-deposited films is affected significantly by the working pressure and film compactness decreases with increasing working pressure from 1.5 mTorr to 10 mTorr. High quality ZnO:Al films with electrical resistivity of 4.25 × 10-4 Ω cm and optical transmittance of 80% in a visible range are obtained at low working pressure of 1.5 mTorr and substrate temperature of 100℃. Crater-like surface morphologies are observed on the textured ZnO:Al films after wet etching. The size and shape of craters are closely dependent on the microstructure and film compactness of as-deposited films. Haze values of the textured ZnO:Al films are improved in a whole wavelength of 300 – 1100 nm compared to commercial SnO2:F films (Asahi U type) and incident light on the textured films is scattered effectively with 30° angle.

Semi-insulating undoped GaN films were grown based on controlling the size of the nucleation sites through a special two-step growth method: First, 16 nm LT-GaN was annealed at 950 ° with a ramping time of 4 min, then the GaN was grown at this temperature for 1 min. Second, the growth temperature was increased to 1020° with a ramping time of 2 min and the GaN layer finally grown at 1020 ° for 40 min. The film grown by this sequence exhibited sheet resistance of up to 109 Ω/sq with mirror-like surface morphology. By slow ramping to 950° in the initial phase of growth, smaller grain sizes and higher nuclei densities were formed and the columnar growth mode along the c direction was dominant. The observation of higher resistance in two-step growth is believed due to the increased misorientation of nuclei when the growth proceeds during temperature ramping to 1020°. The fabricated saw filter on semi-insulating GaN exhibited a high velocity of 5342 m/s at center frequencies of 133.57 MHz and an electromechanical coupling coefficient(k2 ) of about 0.763 %, which was enhanced due to the improvement of surface morphology with high sheet resistance by the two- step ramping technique.

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040°C. Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 x 1018 cm-3

The structural and optoelectronic properties of polycrystalline CdS films, fabricated by three different methods, are compared to one another for the purpose of preparing CdTe/CdS solar cells. The three methods were: alternated spraying of cation and anion solution at room temperature, spray pyrolysis, and chemical bath deposition. We studied the surface morphology and crystal quality and texture by scanning electron and optical microscopy and x-ray diffraction. All films had a well-developed wurtzite structure. Films grown by the alternated-spray method and the chemical bath method consist of randomly-oriented crystallites with dimensions <0.5 microns. Annealing at 400°C increases the crystallite size slightly. Films which were grown by pyrolysis at substrate temperatures from 400°C to 500°C were oriented in the <002> direction. For growth by pyrolysis at 500°C, the surface is rough on a lateral scale of 0.1 to 0.3 microns.