The mafic rocks from boreholes studied here contain the assemblage typical for upper-subgreenschist to lower-greenschist facies (albite, chlorite, illite, titanite, quartz, Ti-oxide ± actinolite) as well as relict clinopyroxene.Metapelites underlying a metabasic rock sequence also record metamorphic alteration as demonstrated by the chlorite and illite crystallinities. Chlorite crystallinity suggests formation in conditions close to the subgreenschist/greenschist facies boundary, but this mineral is partly decomposed during metamorphic retrogression.

Extended abstract of a paper presented at MC 2007, 33rd DGE Conference in Saarbrücken, Germany, September 2 – September 7, 2007

Fractional Laplace motion is obtained by subordinating fractional Brownian motion to a gamma process. Used recently to model hydraulic conductivity fields in geophysics, it might also prove useful in modeling financial time series. Its one-dimensional distributions are scale mixtures of normal laws, where the stochastic variance has the generalized gamma distribution. These one-dimensional distributions are more peaked at the mode than is a Gaussian distribution, and their tails are heavier. In this paper we derive the basic properties of the process, including a new property called stochastic self-similarity. We also study the corresponding fractional Laplace noise, which may exhibit long-range dependence. Finally, we discuss practical methods for simulation.

Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

A silicon single-crystal slab 0.15 mm in thickness was bent to produce small, nonuniform surface strains of the order of 0.2%. The electron channeling patterns were observed in a JSM 840 SEM (scanning electron microscope) at an accelerating voltage close to 25 kV. Proper choice of the triangles formed by intersecting channeling lines of zero-order and of higher-order Laue zones allows one to measure the changes in their dimensions caused by imposed strain. It was estimated that the lower limit of detectable elastic strain is close to 0.1%. The possibilities of using this method for estimation of the average elastic strains in thin epitaxial layers are discussed.