The sedimentary rocks of the Taconic Cow Head klippe contain three clay-mineral suites of progressively younger stratigraphic occurrence. An illite—14A chlorite suite is the oldest, occurring in the Middle Cambrian to early Lower Ordovician part of the 310-m Cow Head Breccia. These earliest clays were transported from the stable craton and shelf, slowly accumulating during 70 x 106 yr on the continental slope in limestone breccia, green and gray shale, and argillaceous limestone. The illite and 14A chlorite are judged to be largely detrital. An illite-expandable chlorite suite is in early to late Lower Ordovician limestone breccia, green and gray shale, and argillaceous limestone of the Cow Head Breccia. A corrensite-illite-smectite suite of late Lower to Middle Ordovician age occurs in the Cow Head Breccia and throughout the overlying 200-m ‘Red Shale’ and the more than 400-m ‘Green Sandstone’ flysch sequence of volcanogenic sandstone and gray shale. Beginning in the early Lower Ordovician, increasing amounts of Mg2+-rich volcanic detritus were rapidly transported westward from a developing volcanic island arc in central Newfoundland. During burial metamorphism, volcanic materials and their alteration products reacted to form the illite-smectite with 5–10% expandable layers plus corrensite or expandable chlorite found in the younger two clay-mineral suites.

Background: We evaluated vorasidenib (VOR), a dual inhibitor of mIDH1/2, in patients with mIDH1/2 glioma (Phase 3; NCT04164901). Methods: Patients with residual/recurrent grade 2 mIDH1/2 oligodendroglioma or astrocytoma were enrolled (age ≥12; Karnofsky Performance Score ≥80; measurable non-enhancing disease; surgery as only prior treatment; not in immediate need of chemoradiotherapy). Patients were stratified by 1p19q status and baseline tumor size and randomized 1:1 to VOR 40 mg or placebo (PBO) daily in 28-day cycles. Endpoints included imaging-based progression-free survival (PFS), time to next intervention (TTNI), tumor growth rate (TGR), health-related quality of life (HRQoL), neurocognition and seizure activity. Results: 331 patients were randomized (VOR, 168; PBO, 163). The median age was 40.0 years. 172 and 159 patients had histologically confirmed oligodendroglioma and astrocytoma, respectively. Treatment with VOR significantly improved PFS and TTNI. Median PFS: VOR, 27.7 mos; PBO, 11.1 mos (P=0.000000067). Median TTNI: VOR, not reached; PBO, 17.8 mos (P=0.000000019). Treatment with VOR resulted in shrinkage of tumor volume. Post-treatment TGR: VOR, -2.5% (95% CI: -4.7, -0.2); PBO, 13.9% (95% CI: 11.1, 16.8). HRQoL and neurocognition were preserved and seizure control was maintained. VOR had a manageable safety profile. Conclusions: VOR was effective in mIDH1/2 diffuse glioma not in immediate need of chemoradiotherapy.

In recent years Irish historians have begun to look more closely into the strategies and tactics of nineteenth-century nationalism, exposing some of the disunities and inconsistencies in a movement long considered monolithic by generations of patriots and ideologues. Although we may rightly claim to know a good deal more than our predecessors about the contours and contents of Irish nationalism, there are still a number of ambiguities and unknowns about its nature, not to mention its significance. Indeed, if K. T. Hoppen is to be believed, most historians have erred by concentrating on the nationalist campaigns of the O'Connellites, Fenians, and Parnellites while neglecting altogether the arena of local politics. Stressing the “deep and constant” importance of “the parish pump,” Hoppen insists that the Repeal and Home Rule agitations were simply “unusual superimpositions upon the deeply pervasive and enduring localist traditions of Irish political life.” Irish voters, then, especially those in the boroughs, lived by and for local issues, personalities, and parties, and many were willing to sell their votes to the highest bidder or the biggest spender.

Such a strong dose of historical revisionism may have its uses, but Hoppen's book, for all its massive documentation, verve, and erudition, does not provide any explanation for the huge outpouring of support given to O'Connell, Parnell, and other advocates of “national” as well as “nationalist” issues. Only an incisive and far-ranging study of political propaganda, ideology, and the mobilization of voters and nonvoters alike in nineteenth-century Ireland can hope to resolve this controversy over the priorities of local and national as well as nationalist issues.

Multiple salmonellosis outbreaks have been linked to contaminated tomatoes. We investigated a multistate outbreak of Salmonella Typhimurium infections among 190 cases. For hypothesis generation, review of patients' food histories from four restaurant-associated clusters in four states revealed that large tomatoes were the only common food consumed by patients. Two case-control studies were conducted to identify food exposures associated with infections. In a study conducted in nine states illness was significantly associated with eating raw, large, round tomatoes in a restaurant [matched odds ratio (mOR) 3·1, 95% confidence interval (CI) 1·3–7·3]. In a Minnesota study, illness was associated with tomatoes eaten at a restaurant (OR 6·3, mid-P 95% CI 1·05–50·4, P=0·046). State, local and federal regulatory officials traced the source of tomatoes to Ohio tomato fields, a growing area not previously identified in past tomato-associated outbreaks. Because tomatoes are commonly eaten raw, prevention of tomato contamination should include interventions on the farm, during packing, and at restaurants.

Ever since the appearance of the monograph On Defining the Phoneme (Twaddell, 1935), it has become customary to classify the views of the phoneme into the four categories: mentalistic, physical, functional, and abstract. The reader is also referred to Jones (1957, and 1967: 212 ff.) and Fudge (1970) for discussions on that basis. However, we can achieve additional insight into the problem of defining the phoneme if we classify the views of the phoneme, this time, on a populational basis. By this, we mean whether the phoneme is defined as a unit of (1) an idiolect, (2) a dialect, (3) a multidialect, or (4) a supralect.

Porous SiLK resin is an ultra-low-k interlayer dielectric (ILD) material designed to meet the needs of the 65 nm technology node and beyond. In early 2002, the porous SiLK resin formulation was defined and scaled up, facilitating the tight monitoring and control of key properties, including pore size distribution, over several lots of material. The film processing kinetics are now well understood and a wide process window exists which ensures optimum pore morphology and pore size distribution. Thermal cycling of films demonstrates no effect on pore morphology or dielectric constant. The material has been designed to minimize the impact of CTE mismatch at high temperature, which challenged the integration of some previous generations of SiLK and porous SiLK dielectric resins. The discrete, closed-cell pore geometry is well characterized and enables the extendibility of process module development from SiLK resin technology to porous SiLK resin. Concurrent with the scale up efforts, advancements in minimizing both cure time and temperature simultaneously, as well as significant improvements in pore size and pore size distribution, have been achieved. The cure and porogen burn out time has been reduced by 50% or greater, and the temperature has been reduced to 370°C. The pore size has been reduced by ∼35%, and the pore size distribution has been narrowed by ∼40%. These advancements have resulted in the introduction of porous SiLK T resin, with a dielectric constant of k = 2.4 and a recommended cure temperature of 370°C, and the introduction of porous SiLK U resin, with a mean pore diameter of ∼5 nm and a dielectric constant of k = 2.2.

Monocrystalline GaN(0001) thin films have been grown at 950 °C on high-temperature, ≈ 100 nm thick, monocrystalline AlN(0001) buffer layers predeposited at 1100 °C on α(6H)−SiC(0001)Si substrates via OMVPE in a cold-wall, vertical, pancake-style reactor. These films were free of low-angle grain boundaries and the associated oriented domain microstructure. The PL spectra of the GaN films deposited on both vicinal and on-axis substrates revealed strong bound excitonic emission with a FWHM value of 4 meV. The near band-edge emission from films on the vicinal substrates was shifted slightly to a lower energy, indicative of films containing residual tensile stresses. A peak attributed to free excitonic emission was also clearly observed in the on-axis spectrum. Undoped films were too resistive for accurate Hall-effect measurements. Controlled n-type, Si-doping in GaN was achieved for net carrier concentrations ranging from approximately 1 × 1017 cm−3 to 1 × 1020 cm−3. Mg-doped, p-type GaN was achieved with nA−nD ≈ 3 × 1017 cm−3, ρ ≈ 7 Ω · cm, and μ ≈ 3 cm2/V · s. Double-crystal x-ray rocking curve measurements for simultaneously deposited 1.4 μm GaN films revealed FWHM values of 58 and 151 arcsec for deposition on on-axis and off-axis 6H−SiC(0001)Si substrates, respectively. The corresponding FWHM values for the AlN buffer layers were approximately 200 and 400 arcsec, respectively.

Organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of A1N and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AIN, GaN and AlxGa1−xN thin films primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces double positioning boundaries in A1N and the alloys at the SiC steps; this sequence problem appears to discourage the two-dimensional nucleation of GaN. Films of these materials grown by MBE at 650°C are textured; monocrystalline films are achieved between 850°C (pure GaN) and 1050°C (pure A1N) by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed. Selected issues surrounding the growth of these materials with particular examples drawn from the authors' research are presented herein.

Photoluminescence (PL) and optically-detected magnetic resonance (ODMR) experiments have been performed on undoped GaN epitaxial layers grown on 6H-SiC substrates. The defects observed in these films are compared with those found from previous ODMR studies of undoped GaN layers grown on sapphire substrates. Strong, sharp donor-bound exciton bands at 3.46 -3.47 eV and weak, broad emission bands at 2.2 eV were observed from several 0.7 and 2.6 μm-thick films. In addition, fairly strong shallow donor - shallow acceptor (SD-SA) recombination with a zero-phonon-line at 3.27 eV was found for GaN layers less than 1 μm-thick. The first observation of magnetic resonance on this SD-SA recombination from undoped GaN is reported in this work. Two magnetic resonance features attributed to effective-mass (EM) and deep-donor (DD) states were detected on the 2.2 eV emission bands from all the GaN/6H-SiC films. These resonances were observed previously on similar emission from undoped GaN layers grown on sapphire substrates. The same EM donor resonance, though much weaker, was also found on the SD-SA recombination. However, a resonance associated with shallow acceptor states was not observed on this emission. The weakness of the donor resonance arises from the weak spin-dependence of the recombination mechanism involving spin-thermalized shallow acceptors. The absence of an EM acceptor is due to the broadening of the resonance through the spreading of the acceptor g-values by random strains in these films.

Monocrystalline GaN(0001) thin films have been grown at 950°C on high-temperature, 100 nm thick, monocrystalline AIN(0001) buffer layers previously deposited at 1100°C on α(6H)-SiC(0001)si substrates via MOCVD in a cold-wall, vertical, pancake-style reactor. AlxGa1−xN films (0≤x≤1) were grown directly on the same SiC surface at 1100°C. Abrupt heterojunctions among the alloy composition were demonstrated. All films possessed a smooth surface morphology and were free of low-angle grain boundaries and associated oriented domain microstructures. Double-crystal x-ray rocking curve measurements for the GaN(0004) reflection for simultaneously deposited 1.4 μm films revealed FWHM values of 58 and 151 arcsec for materials grown on on-axis and off-axis material, respectively. The corresponding values for the AIN(0004) buffer layers were ≈ 200 and ≈400 arc sec, respectively. A similar relationship was found for the alloys for 0≤x≤0.2. The PL spectra of the GaN films deposited on both vicinal and on-axis substrates revealed strong bound exciton emission with a FWHM value of 4 meV. The spectra of these films on the vicinal substrates were shifted to a lower energy, indicative of films containing residual tensile stresses. A peak believed to be associated with free excitonic emission was also observed in each on-axis spectrum. Rutherford backscattering, Auger depth profiling and energy dispersive analysis were used to determine the AIN/GaN ratios in the alloys. Cathodoluminescence of solutions with x<0.5 exhibited strong near band edge emission with a FWHM as low as 31 meV. The band gaps were determined via spectral ellipsometry. Undoped GaN and A1xGa1−xN films were too resistive for accurate Hall-effect measurements. Controlled n-type Si-doping in GaN and AlxGa1−xN (for x≤0.4) was achieved for net carrier concentrations ranging from approximately 2×1017 cm−3 to 2×1019 (AlxGa1−xN) or to l × 1020 (GaN) cm−3. Mg-doped, p-type GaN was achieved with nA−nD = 3 × 1017 cm−3, p ≈ 7 Ω cm and μ ≈ 3 cm2/V·s.

We have studied the near-edge optical response of a LT-grown GaAs sample which was deposited at 300 °C on a Si substrate, and then annealed at 600 °C. The Si was etched away to leave a 3-micron free standing GaAs film. Femtosecond transmission measurements were made using an equal pulse technique at four wavelengths between 825 and 870 nm. For each wavelength we observe both a multipicosecond relaxation time, as well as a shorter relaxation time which is less than 100 femtoseconds.