A detailed microstructural evaluation was executed on the crystallographic texture as well as the mechanisms for nucleation, phase transformation, and grain growth in a Al0.7CoCrFeNi high-entropy alloy. The microstructure and crystallographic orientations were characterized by electron backscatter diffraction, and the chemical composition variations by energy-dispersive X-ray spectroscopy. The cast Al0.7CoCrFeNi alloy started in the BCC phase and partially transformed into the FCC phase. It was found that the Pitsch orientation relationship (OR) dominates the nucleation mechanism of the FCC phase; however, deviations with respect to the Pitsch OR are observed and are attributed to the differently sized atoms forming an ordered B2 phase in the alloy causing lattice distortions. The dual phase BCC–FCC microstructure contains FCC Widmanstätten plates oriented parallel to the {110}BCC planes of the parent grain. It was found that the crystal orientation distribution after the BCC–FCC phase transformation is confined and is explained as a product of the governing mechanisms.

This paper investigates the adhesive interface in a polymer/metal (polyethylene terephthalate/steel) laminate that is subjected to uniaxial strain. Cross-sections perpendicular to such interfaces were created with a focused ion beam and imaged with scanning electron microscopy during straining in the electron microscope. During in situ straining, glide steps formed by the steel caused traction at the interface and initiated crazes in the polyethylene terephthalate (PET). These crazes readily propagated along the free surface of the PET layer. Similar crazing has not been previously encountered in laminates that were pre-strained or in numerical calculations. The impact of focused ion beam treatments on mechanical properties of the polymer/metal laminate system was therefore investigated. It was found that mechanical properties such as toughness of PET are dramatically influenced by focused ion beam etching. It was also found that this change in mechanical properties has a different effect on the pre-strained and in situ strained samples.

A versatile method to fabricate taper-free micro-/nanopillars of large aspect ratio was developed with focused ion beam (FIB) cutting. The key features of the fabrication are a FIB with an incident angle of 90° to the long axis of the pillar that enables milling of the pillar sideways avoiding tapering and the FIB current can be reduced step by step so as to reduce possible radiation damage of the milled surface by Ga ions. A procedure to accurately determine the cross-section of each pillar was developed.

Transmission electron microscopy characterization of two major long-period stacking ordered (LPSO) phases in Mg–Zn–Y alloy, i.e., 18R- and 14H-LPSO are reported. The space group and atomic-scale microstructures of both compounds were determined using a combination of electron diffraction, convergent beam electron diffraction, high-resolution transmission electron microscopy, and Z-contrast scanning transmission electron microscopy. The 18R-LPSO phase is demonstrated to have a point group and space group 3m and R3m (or 3m and R3m), with the lattice parameter a = 1.112 nm and c = 4.689 nm in a hexagonal coordinate system. The 14H-LPSO phase has a point group 6/mmm and a space group P63 /mmc, and the lattice parameter is a = 1.112 nm and c = 3.647 nm. In addition, insertion of extra thin Mg platelets of several atomic layers, results in stacking faults in the LPSO phase. These results may shed some new light on a better understanding of the microstructure and deformation mechanisms of LPSO phases in Mg alloys.

A computer-controlled procedure is outlined here that first determines the position of the amorphous-crystalline interface in an image. Subsequently, from a time series of these images, the velocity of the crystal growth front is quantified. The procedure presented here can be useful for a wide range of applications, and we apply the new approach to determine growth rates in a so-called fast-growth-type phase-change material. The growth rate (without nucleation) of this material is of interest for comparison with identical material used in phase-change random access memory cells. Crystal growth rates in the amorphous phase-change layers have been measured at various temperatures using in situ heating in a transmission electron microscope. Doped SbTe films (20 nm thick) were deposited on silicon nitride membranes, and samples with and without silicon oxide capping layer were studied. The activation energy for growth was found to be 3.0 eV. The samples without capping layer exhibit a nucleation rate that is an order of magnitude higher than the samples with a silicon oxide capping layer. This difference can be attributed to the partial oxidation of the phase-change layer in air. However, the growth rates of the samples with and without capping are quite comparable.