Jellyfish galaxies are starburst galaxies with ram-pressure-stripped tails and blue star-forming knots. These galaxies show a snapshot of star formation enhancement triggered by ram pressure stripping (RPS), being important targets for studying the RPS-induced star formation in gas-rich galaxies. Here we investigate the star formation activity of five jellyfish galaxies in massive clusters, using Gemini GMOS/IFU observations. From the Hα-derived star formation rates (SFRs), we find that our sample shows higher SFR excess to the star formation main sequence than the jellyfish galaxies in low-mass clusters. From the compiled sample of jellyfish galaxies in low-mass to high-mass host clusters, we suggest that the star formation activity of jellyfish galaxies has positive correlations with host cluster mass and degree of RPS. These relationships imply that higher ram pressure environments tend to trigger stronger starbursts in jellyfish galaxies in the early stage of RPS.

A vertebrate burrow-bearing layer of late Pleistocene age is commonly found at many Paleolithic archaeological sites in Korea. The burrows are straight to slightly curved in horizontal (plan) view and gently inclined in lateral (sectional) view. They are interpreted as having been produced by rodent-like mammals based on their size and architecture. The significance of such burrow-bearing layers as a characteristic stratigraphic marker unit is demonstrated by high burrow abundance, consistent stratigraphic position, lack of stratigraphic recurrence at these sites, and widespread geographic extent. Three dating methods, tephrochronology, radiocarbon, and OSL dating, were used to infer the age of these burrow-bearing layers. The dating results indicate that they were formed between ca. 40,000 and 25,000 yr (MIS 3−2), and this suggests that this layer can be used as a stratigraphic time-marker in late Pleistocene paleosol sequences for this region.

The development of embryonic stem cells (ESCs) from large animal species has become an important model for therapeutic cloning using ESCs derived by somatic cell nuclear transfer (SCNT). However, poor embryo quality and blastocyst formation have been major limitations for derivation of cloned ESCs (ntESCs). In this study, we have tried to overcome these problems by treating these cells with histone deacetylase inhibitors (HDACi) and aggregating porcine embryos. First, cloned embryos were treated with Scriptaid to confirm the effect of HDACi on cloned embryo quality. The Scriptaid-treated blastocysts showed significantly higher total cell numbers (29.50 ± 2.10) than non-treated blastocysts (22.29 ± 1.50, P < 0.05). Next, cloned embryo quality and blastocyst formation were analyzed in aggregates. Three zona-free, reconstructed, four-cell-stage SCNT embryos were injected into the empty zona of hatched parthenogenetic (PA) blastocysts. Blastocyst formation and total cell number of cloned blastocysts increased significantly for all aggregates (76.4% and 83.18 ± 8.33) compared with non-aggregates (25.5% and 27.11 ± 1.67, P < 0.05). Finally, aggregated blastocysts were cultured on a feeder layer to examine the efficiency of porcine ES-like cell derivation. Aggregated blastocysts showed a higher primary colony formation rate than non-aggregated cloned blastocysts (17.6 ± 12.3% vs. 2.2 ± 1.35%, respectively, P < 0.05). In addition, derived ES-like cells showed typical characters of ESCs. In conclusion, the aggregation of porcine SCNT embryos at the four-cell stage could be a useful technique for improving the development rate and quality of porcine-cloned blastocysts and the derivation efficiency of porcine ntESCs.

We report on the formation of highly flexible and transparent TiO2/Ag/ITO multilayer films deposited on polyethylene terephthalate substrates. The optical and electrical properties of the multilayer films were investigated as a function of oxide thickness. The transmission window gradually shifted toward lower energies with increasing oxide thickness. The TiO2 (40 nm)/Ag (18 nm)/ITO (40 nm) films gave the transmittance of 93.1% at 560 nm. The relationship between transmittance and oxide thickness was simulated using the scattering matrix method to understand high transmittance. As the oxide thickness increased from 20 to 50 nm, the carrier concentration gradually decreased from 1.08 × 1022 to 6.66 × 1021 cm−3, while the sheet resistance varied from 5.8 to 6.1 Ω/sq. Haacke's figure of merit reached a maximum at 40 nm and then decreased with increasing oxide thickness. The change in resistance for the 60 nm-thick ITO single film rapidly increased with increasing bending cycles, while that of the TiO2/Ag/ITO (40 nm/18 nm/40 nm) film remained virtually unchanged during the bending test.

The allelic variations at glutenin loci could significantly affect the bread baking quality, and specific glutenin alleles might be closely associated with greater gluten strength, which, in turn, is related to superior bread baking quality. In this study, allelic variations at Glu-1, Glu-A3 and Glu-B3 loci were evaluated in 222 Korean wheat landraces using gene-specific polymerase chain reaction (PCR) markers. Ten alleles were identified at Glu-1 loci. Glu-A1c, Glu-B1b, and Glu-D1a or Glu-D1f alleles were predominantly found at the respective loci and their frequencies were 86.5, 87.8 and 96.9 %, respectively. Seven Korean wheat landraces carried the Glu-D1d allele, and only one Korean wheat landrace (IT173162) achieved 10 points for the Glu-1 score. Fifteen alleles were identified at Glu-A3 and Glu-B3 loci; Glu-A3c and Glu-B3d or Glu-B3i alleles were commonly found at the respective loci and their frequencies were 77.0, 33.3 and 37.8 %, respectively. Glu-B3 alleles exhibited the highest genetic diversity than other alleles, while Glu-B1 and Glu-A1 alleles exhibited the lowest genetic diversity than other alleles. Twenty Korean wheat landraces had the Glu-A3d and Glu-B3b, Glu-B3d, Glu-B3f, Glu-B3g or Glu-B3i alleles, which were correlated with superior bread baking quality. Among these wheat lines, two (IT59787 and IT236544) carried the Glu-D1d allele.

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

Oxidation-induced stress evolutions in Ta thin films were investigated using ex situ microstructure analyses and in situ wafer curvature measurements. It was revealed that Ta thin films are oxidized to a crystalline TaO2 layer, which is subsequently oxidized to an amorphous tantalum pentoxide (a-Ta2O5) layer. Initial layered oxidation from Ta to TaO2 phases abruptly induces high compressive stress up to about 3.5 GPa with fast diffusion of oxygen through the Ta layer. Subsequently, it is followed by stress relaxation with the oxidation time, which is related to the slow oxidation from TaO2 to Ta2O5 phases. The initial compressive stress originates from the molar volume expansion during the layered formation of TaO2 from the Ta layer, while the relaxation of the compressive stresses is ascribed to the amorphous character of the a-Ta2O5 layer. According to Kissinger's analysis of the stress evolution during an isochronic heating process, the oxygen diffusion process through the a-Ta2O5 layer is the rate-controlling stage in the layered oxidation process of forming a a-Ta2O5/TaO2/Ta multilayer and has an activation energy of about 190.8 kJ/mol.

We present growth of vertically aligned carbon nanotube (VCNT) on metal substrates such as Cu foils, Inconel 600 and stainless steel (SUS316L) using thermal chemical vapor deposition (TCVD) in order to get a low contact resistance at interface between CNT and substrates for future applications. The temperature range for VCNT growth was 700-775 °C and mixtures of acetylene, argon and hydrogen were used as processing gas. The tube length was controlled by growth time and temperature. Finally, we successfully grew the VCNT on Cu foils over 1 cm2 and confirmed the excellent electrical conductance which can be directly used as anodic electrode in lithium ion battery. On the other hand, the growth of VCNT on Inconel 600 or SUS316L sheets was carried out as purchased. These tubes are expected to be useful for field emission devices.

The levels and distribution of polychlorinated biphenyl (PCB) congeners were analysed in fourteen soil and eight lichen (Usnea aurantiaco-atra) samples from King George Island, West Antarctica. A total of 32 PCB congeners were found in five soil samples collected in 2006, and the mean concentration of total PCBs was 20.4 pg g-1 dry weight (range, 8.0−33.8 pg g-1 dry weight). The most abundant PCB isomers in soil samples were di-, tri-, and penta-CBs, which accounted for more than 75% of the total residues. Twelve dioxin-like PCBs were also detected in nine soil and eight lichen samples, and the levels of dioxin-like PCBs were 5-fold higher in lichens than in soil. PCBs were detected at very low levels in most soil and lichen samples. The highest congener concentrations were found for PCB 118 (6.63 and 21.93 pg g-1 in soil and lichen, respectively) among dioxin-like PCBs. PCB levels in air samples were highly correlated with those in soil and lichen samples, as were PCB levels in soil and lichen samples collected at the same site. Long-range atmospheric transport is thought to be the main source of PCBs on King George Island. However, PCB levels in soil and lichen samples were also apparently influenced by local sources of PCBs.

Ferromagnetic Cu-doped GaN film was grown on a GaN-buffered sapphire (0001) substrate by a hybrid physical-chemical-vapor-deposition method (HPCVD). The GaCuN film (Cu: 3.6 at.%) has a highly c-axis-oriented hexagonal wurtzite crystal structure, which is similar to GaN buffer but without any secondary phases such as metallic Cu, CuxNy, and CuxGay compounds. Two weak near-band edge (NBE) emissions at 3.38 eV and donor-acceptor-pair (DAP) transition at 3.2 eV with a typical strong broad yellow emission were observed in photoluminescence spectra for GaN buffer. In contrast, the yellow emission was completely quenched in GaCuN film because Ga vacancies causing the observed yellow emission in undoped GaN were substituted by Cu atoms. In addition, GaCuN film exhibits a blue shift of NBE emission, which could be explained with the +2 oxidation state of Cu ions, replacing +3 Ga ions resulting in band gap increment. The valance sate of Cu in GaCuN film was also confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The GaCuN film shows ferromagnetic ordering and possesses a residual magnetization of 0.12 emu/cm3 and a coercive field of 264 Oe at room temperature. The unpaired spins in Cu2+ ions (d9) are most likely to be responsible for the observed ferromagnetism in GaCuN.

We report the realization of the p-type conductivity and the enhancement of the photoluminescence (PL) intensity in undoped ZnO films treated with high-energy (1 MeV) electron-beam irradiation (HEEBI), suggesting that the HEEBI process is compatible with a low-temperature requirement for the fabrication of transparent thin film transistors with good efficiency on a plastic substrate. The p-type conductivity of the films was revealed by the Hall, x-ray photoelectron spectroscopy, and PL measurements after being electron-irradiated in air at room temperature. The major acceptor-like defects were determined to be oxygen interstitial and zinc vacancy. A model was proposed in terms of O as well as Zn diffusion to explain the observed results. It was also observed that HEEBI treatment has little influence on the optical transmittance of ZnO films, whereas HEEBI treatment shifts the optical band gap toward the lower energy region from 3.29 to 3.28 eV.

Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn–3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 °C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin Ni2P layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.

Ceria doped-yttrium aluminum garnet (Y3Al5O12:Ce3+, YAG:Ce), which is known as an efficient phosphor, have been widely used in optical display and lighting applications. Improved wet chemical method, sol-gel, has been studied, since conventional solid-state reaction requires a high-temperature and prolonged heating to obtain the pure phase. However, there has been little information, such as on pre-firing temperature, concerning high-quality powder formed by the wet chemical process. In this work, YAG:Ce was synthesized with a salted sol-gel process in which a water solution of inorganic salt with citric acid as additive. Transparent starting sol was pre-fired at 200 ˜ 300°C for 2 hrs in air and final annealing to obtain phase-pure YAG:Ce particles was performed at 1100°C for 2 hrs in argon. The effects of pre-firing temperatures on the crystal structure, morphology and luminescence were investigated. Effects of residual organics in the pre-fired gel on the properties of finally annealed phosphors will be fully discussed on the basis of the results of thermal analysis and chemical structure.

Zinc oxide (ZnO) thin films have emerged as one of the most promising oxide materials owing to their optical and electrical properties, together with their high chemical and mechanical stability. Chemical solution deposition (CSD) is attractive technique for obtaining ZnO thin films and has the advantages of easy control of the film composition and easy fabrication of a larger-area thin film at low cost. In this work, epitaxial ZnO thin films on SiC substrate were prepared by using a CSD method with a zinc naphthenate precursor. Precursor films were pyrolyzed at 500°C for 10 min in air and finally annealed at 600°C, 700°C, 800°C and 900°C for 30 min in air. Crystallinity and in-plane alignment of the films were investigated by X-ray diffraction theta-2 theta scan and pole-figure analysis. Scanning electron microscope, scanning probe microscope, and He-Cd laser (325 nm) are used to detect the surface morphology and photoluminescence of the films. The effects of annealing temperature on crystallinity and epitaxy of the films will be fully discussed on the basis of the results of X-ray diffraction analysis.

In a crystallographic study of stress induced voiding of copper interconnect, the planar electron backscattered diffraction analysis showed that the void was initiated at the triple junction of the grain boundaries, not at the junction of the twin boundary and grain boundary. By using stepwise cross-sectional crystalline investigation for the void, it was possible to rebuild 3D crystalline structure near the void. From the stress calculation based on the measured crystalline structures, the hydrostatic stress was highly concentrated at the triple junction of the twin boundary and grain boundary, but experimentally, there was no voiding at that. The voiding in the copper interconnect may depend mainly on the boundary instability.

Imide-oligosiloxanes hybrid nanocomposites (Imide HYBRIMER) were synthesized and their unique structure and thermal and mechanical properties were investigated. Imide HYBRIMER was made by reaction with nano-sized amine oligosiloxane (AO) and dianhydride, where oligosiloxane moieties were cross-linked by imide bonds to form three-dimensional nanocomposite. The AO were prepared from condensation reaction with aminopropyltirmethoxysilane (APTS) and diphenylsilanediol (DPSD) under base catalysts without water and solvents. The preparation of imide HYBRIMER was completed through the thermal imidization of amic acids, which were formed by reaction with amines groups in the AO and two different kinds of dianhydrides. The imide HYBRIMER were stable up to 400°C and thermal expansion coefficients measured by thermo-mechanical analysis (TMA) were varied from 33 to 80 ppm/°C. Higher thermal stabilities and mechanical strengths could be obtained by incorporating siloxane moieties in hybrid nanocomposites. The imide HYBRIMER, which has three dimensional network, could induce very low birefringence about 0.003, which was lower than that of linear typed polyimides.