The aim of the work was to study the effect of organo-montmorillonite (OMt) on the properties of hydrogenated nitrile rubber (HNBR)/OMt nanocomposites. The nanocomposites were prepared by a melt intercalation method. The structure of the composites was studied by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The behavior of stress-strain, aging resistance, solvent resistance, and the dynamic mechanical properties of HNBR/OMt nanocomposites were investigated. The TEM and XRD results showed that the OMt layers were dispersed homogeneously in the HNBR matrix. The HNBR/OMt nanocomposites showed excellent mechanical properties which were attributed to the nanometer scale dispersion and strong interaction between the HNBR and OMt. The composites possessed excellent aging resistance and oil resistance, which improved with OMt content. Dynamic mechanical analysis showed that the glass-transition temperature, Tg, of the HNBR/OMt nanocomposites was increased and the nanocomposites had a good rolling resistance in comparison to pure HNBR. The composites displayed better dynamic mechanical properties.

Transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were applied to study the correlation between the microstructure and physical properties of the GaN films grown by light radiation heating metalorganic chemical vapor deposition (LRH-MOCVD), using GaN buffer layer on sapphire substrates. When the density of the threading dislocation (TD) increases about one order of magnitude, the yellow luminescence (YL) intensity is strengthened from negligible to two orders of magnitude higher than the band edge emission intensity. The full width of half maximum (FWHM) of the GaN (0002) peak of the XRD rocking curve was widened from 11 min to 15 min, and in Raman spectra, the width of E2 mode is broadened from 5 cm−1 to 7 cm−1. A “zippers” structure at the interface of GaN/sapphire was observed by high-resolution electron microscope (HREM). Furthermore the origins of TD and relationship between physical properties and microstructures combining the growth conditions are discussed.

Transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were applied to study the correlation between the microstructure and physical properties of the GaN films grown by light radiation heating metalorganic chemical vapor deposition (LRH-MOCVD), using GaN buffer layer on sapphire substrates. When the density of the threading dislocation (TD) increases about one order of magnitude, the yellow luminescence (YL) intensity is strengthened from negligible to two orders of magnitude higher than the band edge emission intensity. The full width of half maximum (FWHM) of the GaN (0002) peak of the XRD rocking curve was widened from 11 min to 15 min, and in Raman spectra, the width of E2 mode is broadened from 5 cm-1 to 7 cm-1. A “zippers” structure at the interface of GaN/sapphire was observed by high-resolution electron microscope (HREM). Furthermore the origins of TD and relationship between physical properties and microstructures combining the growth conditions are discussed.