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5 results

  • Paternal age at birth and high-functioning autistic-spectrum disorder in offspring

  • Kenji J. Tsuchiya, Kaori Matsumoto, Taishi Miyachi, Masatsugu Tsujii, Kazuhiko Nakamura, Shu Takagai, Masayoshi Kawai, Atsuko Yagi, Kimie Iwaki, Shiro Suda, Genichi Sugihara, Yasuhide Iwata, Hideo Matsuzaki, Yoshimoto Sekine, Katsuaki Suzuki, Toshirou Sugiyama, Norio Mori, Nori Takei
  • Journal:
    The British Journal of Psychiatry / Volume 193 / Issue 4 / October 2008
    Published online by Cambridge University Press:
    02 January 2018, pp. 316-321
    Print publication:
    October 2008
    • Article
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  • Background

    Previous studies have reported the association between advanced paternal age at birth and the risk of autistic-spectrum disorder in offspring, including offspring with intellectual disability.

    Aims

    To test whether an association between advanced paternal age at birth is found in offspring with high-functioning autistic-spectrum disorder (i.e. offspring without intellectual disability).

    Method

    A case–control study was conducted in Japan. The participants consisted of individuals with full-scale IQ ⩾ 70, with a DSM–IV autistic disorder or related diagnosis. Unrelated healthy volunteers were recruited as controls. Parental ages were divided into tertiles (i.e. three age classes). Odds ratios and 95% confidence intervals were estimated using logistic regression analyses, with an adjustment for age, gender and birth order.

    Results

    Eighty-four individuals with autistic-spectrum disorder but without intellectual disability and 208 healthy controls were enrolled. Increased paternal, but not maternal, age was associated with an elevated risk of high-functioning autistic-spectrum disorder. A one-level advance in paternal age class corresponded to a 1.8-fold increase in risk, after adjustment for covariates.

    Conclusions

    Advanced paternal age is associated with an increased risk for high-functioning autistic-spectrum disorder.

  • Thermoelectric Properties of B12+xC3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

  • Hisayuki Suematsu, Kazuo Kitajima, Ichiro Ruiz, Tetsuo Suzuki, Weihua Jiang, Kiyoshi Yatsui, Katsuaki Kobayashi, Masatoshi Takeda
  • Journal:
    MRS Online Proceedings Library Archive / Volume 697 / January 2001
    Published online by Cambridge University Press:
    17 March 2011, P8.26
    Print publication:
    January 2001

  • Thin films of boron carbide (B12+xC3-x) were prepared on glass substrates by a pulsed ion-beam evaporation method. A pulsed proton beam with an energy of 1 MV (peak) and a current of 60 kA was focused on sintered B12+xC3-x targets. Ablation plasma was formed from the irradiated targets and thin films were prepared on Pyrex and SiO2 glass substrates at room temperature. From results of X-ray diffraction, the thin films consisted of a B12+xC3-x phase. Using a known relationship between the composition and the lattice parameters, the composition of B12+x1C3-x thin films was estimated to be x = 0.3 and 1.0, which were close to the nominal composition of the targets. These results indicate that B12+x1C3-x with different carbon contents has been successfully prepared by IBE without substrate heating or sample annealing. Thermoelectric properties of the thin films were measured. A B12+x1C3-x thin film with estimated composition of x =0.9 exhibited the highest power factor at room temperature among the B12+x1C3-x samples reported.