We report two cases of successful emergency pacing via the umbilical vein in neonates with congenital complete atrioventricular block. The first patient, a neonate with normal cardiac anatomy, underwent emergency temporary pacing via the umbilical vein under echocardiographic guidance. The patient underwent permanent pacemaker implantation on postnatal day 4. The second patient, a neonate with heterotaxy syndrome, underwent emergency temporary pacing through the umbilical vein under fluoroscopic guidance. The patient underwent permanent pacemaker implantation on postnatal day 17.

We present the results of global three-dimensional radiation magnetohydrodynamic simulations of the formation of soft X-ray emitting regions in active galactic nuclei by applying a radiation magnetohydrodynamic code based on the M1-closure scheme. The effect of Compton cooling is taken into account. When the surface density of the accretion flow exceeds the upper limit of the radiatively inefficient accretion flow (RIAF), the optically thin, hot accretion flow near the black hole co-exists with the soft X-ray emitting, warm (T = 106 – 107 K) Comptonized region around r = 20 – 40rs, where rs is the Schwarzschild radius. Numerical results indicate that when the accretion rate approaches the Eddington accretion rate, the warm Comptonized region stays in optically thin for effective optical depth, Thomson thick, and radiation pressure dominant state. This region is found to oscillate between a geometrically thin, cool state and a geometrically thick state inflated by radiation pressure. The time variability of the accretion flow is consistent with that of the narrow-line Seyfert 1 galaxies.

The main aim of this paper is to classify Ulrich ideals and Ulrich modules over two-dimensional Gorenstein rational singularities (rational double points) from a geometric point of view. To achieve this purpose, we introduce the notion of (weakly) special Cohen–Macaulay modules with respect to ideals, and study the relationship between those modules and Ulrich modules with respect to good ideals.

In this paper, we discuss stress-adapted wild Vigna plants and several important Vigna crops. Seeds, young shoots and/or tubers of many wild Vigna species are edible and are eaten by people in some locations where they grow. We propose the concept of ‘neo-domestication’ of stress-adapted wild edible Vigna species. As the causative change of the mutation resulting in a domestication gene is usually ‘loss-of-function’ type, ‘neo-domestication’ could be achieved by conventional mutation breeding together with screening by TILLING. The ‘neo-crops’ could play an important role in areas unsuitable for growing other crops to increase world food production. We also propose that wild Vigna species can be ‘new model plant species’ for the genetic study of natural adaptation to stresses (e.g. salt, acid, alkali, drought, flood, pests and diseases). To facilitate this, the Vigna Genome Project has been initiated. In addition, sustainable cropping systems may be enhanced by analysis of the nitrogen-fixing systems of stress-adapted Vigna species. Stress-adapted symbiotic bacteria produce nodules on stress-adapted Vigna species. Therefore, analyses of the genetic diversity of symbiotic bacteria and the process of symbiosis under stress environments should be conducted.

In this paper we study Ulrich ideals of and Ulrich modules over Cohen--Macaulay local rings from various points of view. We determine the structure of minimal free resolutions of Ulrich modules and their associated graded modules, and classify Ulrich ideals of numerical semigroup rings and rings of finite CM-representation type.

The efficiency of the energy conversion rate in the relativistic magnetic reconnection is investigated by means of Relativistic Resistive Magnetohydrodynamic (R2MHD) simulations. We confirmed that the simple Sweet-Parker type magnetic reconnection is a slow process for the energy conversion as theoretically predicted by Lyubarsky (2005). After the Sweet-Parker regime, we found a growth of the secondary tearing instability in the elongated current sheet. Then the energy conversion rate and the outflow velocity of reconnection jet increase rapidly. Such a rapid energy conversion would explain the time variations observed in many astrophysical flaring events.

To construct a more realistic model of relativistic reconnection, we extend our R2MHD code to R3MHD code by including the radiation effects (Relativistic Resistive Radiation Magnetohydrodynamics R3MHD). The radiation field is described by the 0th and 1st moments of the radiation intensity (Farris et al. 2008, Shibata et al. 2011). The code has already passed some one-dimensional and multi-dimensional numerical problems. We demonstrate the first results of magnetic reconnection in the radiation dominated current sheet.

This paper overview recent research results about ferroelectric FETs such as a Ferroelectric (Fe-) NAND flash memory for enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V operation low-power CPU and SoC.

In the last five years, as the data through internet increases, the power consumption at the data center doubled. To solve the power crisis SSD is expected to replace HDD. For such an enterprise SSD, the Fe-NAND flash memory is most suitable due to a low power consumption and a high reliability. The Fe-NAND is composed of Metal Ferroelectric Insulator Semiconductor transistors. The program/erase voltage decreases from 20V to 6V. In the Fe-NAND, the electric polarization in the ferroelectric layer flips with a lower electric field and the Vth of a memory cell shifts. Due to a low program/erase voltage, a low power operation is achieved. In the Fe-NAND, a high write/erase endurance, 100Million cycle, four orders of magnitudes higher than the conventional NAND, is realized because there is no stress-induced leakage current.

The Fe-NAND flash memory with a non-volatile (NV) page buffer is also proposed. The data fragmentation of SSD in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. In addition, a zero Vth memory cell scheme is proposed to best optimize the reliability of the Fe-NAND. The Vth shift caused by the read disturb, program disturb and data retention decreases by 32%, 24% and 10%, respectively. A 1.2V operation adaptive charge pump circuit for the low voltage and low power Fe-NAND is introduced. By using Fe-FETs as diodes in the charge pump and optimizing the Vth of Fe-FETs at each pump stage, the power efficiency and the output voltage increase by 143% and 25% without the circuit area and process step penalty.

Finally, a ferroelectric 6T-SRAM is proposed for the 0.5V operation low power CPU and SoC. During the read/hold, the Vth of Fe-FETs automatically changes to increase the static noise margin by 60%. During the stand-by, the Vth increases to decrease the leakage current by 42%. As a result, the supply voltage by 0.11V, which decreases the active power by 32%.

In this paper, we introduced a novel calculation method to reproduce deposition profiles in various types of Chemical Vapor Deposition (CVD) reactors. Robust and accurate calculations along with reduced computing cost were achieved by the method. Boundary value problems for estimating diffusion-reaction equations by iterations of numerical integrations were changed into problems of finding the linear combinations consisted of a few "basis functions", which are inherent in the reactors. The coefficients of the linear combinations were optimized by Genetic Algorithms (GA). We could demonstrate the validity of the proposed method using various examples of the reaction mechanisms and conditions.

Generation of RNA dimeric form of the human immunodeficiency virus type 1 (HIV-1) genome is crucial for viral replication. The dimerization initiation site (DIS) has been identified as a primary sequence that can form a stem-loop structure with a self-complementary sequence in the loop and a bulge in the stem. It has been reported that HIV-1 RNA fragments containing the DIS form two types of dimers, loose dimers and tight dimers. The loose dimers are spontaneously generated at the physiological temperature and converted into tight dimers by the addition of nucleocapsid protein NCp7. To know the biochemical process in this two-step dimerization reaction, we chemically synthesized a 39-mer RNA covering the entire DIS sequence and also a 23-mer RNA covering the self-complementary loop and its flanking stem within the DIS. Electrophoretic dimerization assays demonstrated that the 39-mer RNA reproduced the two-step dimerization process, whereas the 23-mer RNA immediately formed the tight dimer. Furthermore, deletion of the bulge from the 39-mer RNA prevented the NCp7-assisted tight-dimer formation. Therefore, the whole DIS sequence is necessary and sufficient for the two-step dimerization. Our data suggested that the bulge region regulates the stability of the stem and guides the DIS to the two-step dimerization process.

Three vestibular nerve specimens removed at transmeatal neurectomy were studied in order to understand better retrograde degeneration and regeneration after vestibular neurectomy in the posterior cranial fossa. In two cases this procedure followed retrolabyrinthine retrosigmoid posterior fossa vestibular neurectomy. The subjects, three patients with Menière's disease, were compared with one another and two autopsy controls with no known otological problem. The specimens were obtained at the distal end of the internal auditory canal and transversely sectioned. Many collapsed Schwann cell basement membranes were observed. The ratio of small-diameter nerve fibres increased significantly after neurectomy. Onion bulb formation around myelinated nerve fibres with small diameters and Schwann cell proliferation around the soma of vestibular ganglion cells reflected remyelination. We conclude that peripheral processes of vestibular nerve fibres can undergo retrograde degeneration and subsequent regeneration after transection of the central process.

In-situ interfacial impedance measurements were used to study the effects of moisture at 80 ° C on the interface between oxidized silicon and a diglycidyl ether of bisphenol A (DGEBA) epoxy cured with diethylene triamine (DETA). Using two electrode configurations, admittances attributable to bulk and interfacial conduction processes were distinguished. Bulk impedance measurements followed Randles behavior; conduction in the bulk epoxy was ionic, and was diffusion controlled at low frequencies. Equivalent circuit models were used to demonstrate that an apparent interfacial conduction process was caused by distributed current leakage into the silicon subphase, not a true interfacial conduction path that would indicate water adsorption or interfacial aggregation. However, transitions in diffusivity and bulk epoxy permittivity behavior above a 70–80% relative humidity threshold were observed. Effective epoxy permittivity (εc) jumped to values indicative of a water cluster induced Maxwell-Wagner relaxation. The humidity threshold corresponds to a level that has been associated with adhesion loss in epoxies. It appears that epoxy adhesion losses result from bulk epoxy property changes at high humidity rather than interfacial bond displacement or delamination.

The effect of ambient gases on degradation and rejuvenation of ZnO varistors was investigated from the viewpoint of voltage-current characteristics. Ambient oxygen gas suppressed increases in the leakage current during ac biasing, while it rejuvenated degraded samples. The time dependence of rejuvenation indicated that ion migrations, possibly the desorption and adsorption of oxygen ions at the grain boundaries, occur reversibly in degradation and rejuvenation. Moreover, a noticeable difference was observed between V–I curve shapes after ac biasing in nitrogen and in oxygen atmospheres.