In this paper, we have observed an atomic-scale structure and compositional variation at the interface of the InGaN/GaN multi-quantum wells (MQW) by both scanning transmission electron microscopy (STEM) using high-angle annular dark-field mode and atom probe tomography (APT). The iso-concentration analysis of APT results revealed that the roughness of InGaN/GaN interface increased as the MQW layers were filled up, and that the upper interface of MQW (GaN/InGaN to the p-GaN side) was much rougher than that of the lower interface (InGaN/GaN tot he n-GaN side). On the basis of experimental results, it is suggested that the formation of interface roughness can affect the quantum efficiency of InGaN-based light-emitting diodes.

Background: Mortality associated with depression may be influenced by severity of depression and gender. We investigated the differential impacts on all-cause mortality of late-life depression by the type of depression (major depressive disorder, MDD; minor depressive disorder, MnDD; subsyndromal depression, SSD) and gender after adjusting comorbid conditions in the randomly sampled elderly.

Methods: One thousand community-dwelling elderly individuals were enrolled. Standardized face-to-face clinical interviews, neurological examination, and physical examination were conducted to diagnose depressive disorders and comorbid cognitive disorders. Depressive disorders were diagnosed according to the Diagnostic and Statistical Manual of Mental Disorders-IV (DSM-IV) criteria and SSD to study-specific operational criteria. Five-year survivals were compared between groups using Cox proportional hazards models.

Results: By the end of 2010, 174 subjects (17.4%) died. Depressive disorder (p = 0.001) and its interaction term with gender (p < 0.001) were significant in predicting five-year survival. MDD was an independent risk factor for mortality in men (hazard ratio = 3.65, 95% confidence interval = 1.67–7.96) whereas MnDD and SSD were not when other risk factors were adjusted.

Conclusions: MDD may directly confer the risk of mortality in elderly men whereas non-major depression may be just an indicator of increased mortality in both genders.

Self-Organizing Maps (SOM) have been used for patterning and visualizing ten environmental parameters and phytoplankton biomass in a mactrotidal (>10 m) Gyeonggi Bay and artificial Shihwa Lake during 1986–2004. SOM segregated study areas into four groups and ten subgroups. Two strikingly alternative states are frequently observed: the first is a diverse non-eutrophic state designated by three groups (SOM 1–3), and the second is a eutrophic state (SOM 4: Shihwa Lake and Upper Gyeonggi Bay; summer season) characterized by enhanced nutrients (3 mg l−1 dissolved inorganic nitrogen, 0.1 mg l−1 PO4) that act as a signal and response to that signal as algal blooms (24 µg chlorophyll-a l−1). Bloom potential in response to nitrification is affiliated with high temperature (r = 0.26), low salinity (r = −0.40) and suspended solids (r = –0.27). Moreover, strong stratification in the Shihwa Lake has accelerated harmful algal blooms and hypoxia. The non-eutrophic states (SOM 1–3) are characterized by macro-tidal estuaries exhibiting a tolerance to pollution with nitrogen-containing nutrients and retarding any tendency toward stratification. SOM 1 (winter) is more distinct from SOM 4 due to higher suspended solids (>50 mg l−1) caused by resuspension that induces light limitation and low chlorophyll-a (<5 µg l−1). In addition, eutrophication-induced shifts in phytoplankton communities are noticed during all the seasons in Gyeonggi Bay. Overall, SOM showed high performance for visualization and abstraction of ecological data and could serve as an efficient ecological map that can specify blooming regions and provide a comprehensive view on the eutrophication process in a macrotidal estuary.

Background: The influences of demographics, culture, language, and environmental changes on Mini-Mental State Examination (MMSE) scores are considerable.

Methods: Using a sample of 7452 healthy, community-dwelling elderly Koreans, aged 55 to 94 years, who participated in the four ongoing geriatric cohorts in Korea, we investigated demographic influences on MMSE scores and derived normative data for this population. Geropsychiatrists strictly excluded subjects with cognitive disorders according to the protocol of the Korean version of the Consortium to Establish a Registry for Alzheimer's Disease Assessment Packet (CERAD-K) Clinical Assessment Battery (CERAD-K-C).

Results: Education (standardized β = 0.463), age (standardized β = −0.303), and gender (standardized β = −0.057) had significant effects on MMSE scores (p < 0.001). The score of MMSE increase 0.379 point per 1-year education, decrease 0.188 per 1-year older, and decrease 0.491 in women compared to men. Education explained 30.4% of the scores’ total variance, which was much larger than the variances explained by age (8.4%) or gender (0.3%). Accordingly, we present normative data for the MMSE stratified by education (0, 1–3, 4–6, 7–9, 10–12, and ≥ 13 years), age (60–69, 70–79, and 80–89 years), and gender.

Conclusions: We provide contemporary education-, age-, and gender-stratified norms for the MMSE, derived from a large, community-dwelling elderly Korean population sample, which could be useful in evaluating individual MMSE scores.

The diatoms are an ecologically important group of algae that have been extensively studied by ecologists and taxonomists. However, the large-scale patterns of diatom distribution and the factors underlying this distribution are largely unknown. The aims of this study were to identify the large-scale spatial patterns of benthic diatom assemblages in Korean streams and rivers, and to assess the importance of numerous environmental factors on diatom distribution. We classified 720 study sites based on diatom flora. Benthic diatoms, water chemistry, altitude, and riparian land cover and use were characterized by multivariate analyses, Monte Carlo permutation tests, and indicator species analysis. In total, we identified 531 diatom taxa. Diatom assemblages were mostly dominated by species of the genera Achnanthes, Navicula, Nitzschia, Cocconeis, Fragilaria (Synedra included), Cymbella, Gomphonema, and Melosira. Cluster analysis partitioned all 720 sites into eight groups based on diatom species composition. Canonical correspondence analysis indicated that altitude, land cover and use, current velocity, electrical conductivity, and nutrient levels explained a significant amount of the variation in the composition of assemblages of benthic diatoms. At the national scale, a downstream ecological gradient was apparent, from fast-flowing, mostly oligotrophic highland streams to slow-flowing, mostly eutrophic lowland rivers. Our data suggest that spatial factors explain some of the variation in diatom distribution. The present investigation of the spatial patterns of benthic diatoms, the ecological determinants of diatom occurrence, and the identification of diatom indicator species contributes to development of a program for assessing the biological integrity of lotic ecosystems in Korea.

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.

Surface roughness of ITO (Indium Tin Oxide) was measured by AFM (Atomic Force Microscope) and the existence of spikes was verified. Then OLED (Organic Light Emitting Diode) devices made from those substrates were fabricated and their electrical properties were measured with an I-V measurement system. There is considerable difference in the reverse leakage current of OLEDs depending on the surface roughness of the substrate. We observed a good correlation of reverse leakage current with Rpv (Peak-to-Valley roughness), but the correlations between reverse leakage current and Ra (Average roughness) and Rrms (Root-Mean-Square roughness) are not as good.

Selective nucleation and lateral growing method have been developed for high quality ferroelectric PZT(65/35) thin films using perovskite-phase PZT island seed. The PZT films on PZT seed island were transformed into the perovskite phase at temperatures as low as 540°C, which is 150°C lower than compared to that of PZT thin films deposited on Pt films. The temperature difference enables lateral growth without undesirable random nucleation. Maximum grain sizes of the perovskite-phase PZT films were determined by the annealing temperature. The PZT thin films show a leakage current density of 8×10−8 A/cm2, breakdown field of 1240 kV/cm, saturation polarization of 42 μC/cm2, and remanent polarization of 30 μC/cm2, whose values were maintained up to 2×1011 cycles. In this study, we show that when there was no grain boundary in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. So the main source of degradation is the grain boundary in the PZT thin films.

The effects of grain boundaries on the characteristics of the PZT thin films using single-grained PZT array by selective nucleation and growth method were investigated by locating the upper Pt electrode of 8 μm× 8 μm sized square directly on the single grains, 1 grain boundary and 4 grain boundaries in a controlled manner. It turned out that when there was no grain boundary, the best ferroelectric and electrical performance were obtained as expected. However, serious degradation was observed in polarization, leakage current, breakdown field and fatigue characteristics when grain boundary was contained in the area measured. This is the first qualitative investigation about the effects of the grain boundaries on the ferroelectric and electrical performance of the PZT thin films. It was found that degradation of the PZT thin films was accelerated with increasing the length of the grain boundaries within the top electrode and the main source of degradation in PZT thin films is grain boundary.

We report a new Ni/Pt/Au (20/30/80 nm) metallization scheme to achieve a low ohmic contacts to p-type GaN with a carrier concentration of 9.4 × 1016 cm-3. A Mg-doped GaN layer (0.5 μm) was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). All metal thin films were deposited on the p-GaN layer in an electron-beam evaporation system. Samples were annealed by a rapid thermal annealing (RTA) process at a range of temperatures from 300 °C to 850 °C under a flowing Ar atmosphere. A circulartransmission line model (c-TLM) was employed to calculate the specific contact resistance, and current-voltage (I-V) data were measured with HP4155A. The Ni/Pt/Au contacts without the annealing process showed nearly rectifying characteristics. The ohmic contacts were formed on the samples annealed at 500 °C for 30 sec and the I-V data showed a linear behavior. The specific contact resistance was 2.1 × 10-2 Ωcm2. However with increasing the annealing temperature above 600 °C, ohmic contacts were again degraded. Auger electron spectroscopy (AES) depth profiles were used to investigate the interfacial reactions between the trilayer and GaN. AES results suggested that Pt plays a significant role in forming ohmic contact as an acceptor at the interface. Atomic force microscope (AFM) also showed that the samples with good ohmic contact have very smooth surface.

We present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.