Hitachiite, Pb5Bi2Te2S6, is a new mineral discovered in the Hitachi mine, located in the Ibaraki Prefecture of Japan. The mean of 21 electron microprobe analyses gave: Pb 52.01, Bi 23.06, Fe 0.69, Sb 0.17, Te 13.74, S 9.71, Se 0.54, total 100.04 wt.%. The empirical chemical formula based on 15 apfu is (Pb4.75Fe0.23)Σ4.98(Bi2.09Sb0.03)Σ2.12Te2.04(S5.73Se0.13)Σ5.86, ideally Pb5Bi2Te2S6. Synchrotron single-crystal X-ray diffraction experiments indicated that hitachiite has trigonal symmetry, space group P${\bar 3}$m1, with a = 4.2200(13) Å, c = 27.02(4) Å and Z = 1. The four strongest diffraction peaks shown in the powder X-ray pattern [d, Å (I)(hkl)] are: 3.541(35)(012), 3.391(59)(013), 3.039(100)(015) and 2.114(56)(110). The calculated density (Dcalc) for the empirical chemical formula is 7.54 g/cm3.

The crystal structure of hitachiite has been refined using synchrotron single-crystal X-ray diffraction data, to R = 7.38% and is based on ABC-type stacking of 15 layers (five Pb, two Bi, two Te, and six S layers) along the [001] direction, and with each layer ideally containing only one kind of atom. The stacking sequence is described as Te–Bi–S–Pb–S–Pb–S–Pb–S–Pb–S–Pb–S–Bi–Te. The discovery of hitachiite implies that the minerals of the Bi2Te2S–PbS join might form a homologous series of Bi2Te2S·nPbS.

We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnInON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnInON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnInON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of “nitrogen mediated crystallization (NMC) method”, where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

A novel and fundamental method was reported to judge states of lithium ion batteries (LIBs) using the capacitance and the voltage of the cells that were estimated from the real-time currents and voltage characteristics of the cells. We measured the differential capacitance, that is, dQ/dV or delta Q/ delta V that is equal to the currents (I) divided by differential voltages (dV/dt) calculated from the current and the voltage characteristics of the cell during the charging/ discharging, where Q is the charge that flows through the cell, V is the voltage of the cell and t is time. It is thought that the capacitance decrease with the degradation of the cell because the effective area of the electrodes is decreasing due to formation of undesirable compounds. The differential capacitance in some specific voltage range for the LIBs was approximately directly proportional to the state of the degradation of the cell. Therefore, it is concluded that the novel method is very useful to judge the state of the LIBs.

Organic thin-film transistors (OTFTs) using cross-linked olefin polymer as a gate insulator were fabricated on a plastic film. An olefin polymer layer was formed by spin-coating and baking at temperatures below 150°C. Pentacene was used as an organic semiconductor layer. The fabricated OTFTs with a short 5-μm-long channel showed a mobility of 0.1-0.2 cm2/Vs and a current ON/OFF ratio of 107. These OTFTs also exhibited good stable performance in the atmosphere. On the basis of the results, we fabricated a 5 inches OTFT-driven flexible active-matrix organic light emitting diode (AMOLED) display. The gate insulator, some metal wirings and electrodes on the OTFT backplane were formed on the plastic film by photolithography. After fabrication of the OTFT backplane, OLED layers were formed by vacuum deposition through a shadow-mask. Clear color moving images were observed on the flexible display even when it was bent.

We investigated the process of the hole inlet closure in surface-diffusion-driven transformation of arrays of high-aspect-ratio holes on Si(001) substrates. The inlet gradually shrinks while keeping the circular shape because of lateral bulging of the inlet surface. We observed complicated top view morphologies reflecting the four-fold symmetry of the Si(001) surface on the inlet surface. Large {111} and {113} facets are formed in the four equivalent azimuths of the [110], while corrugated patterns arise in the four equivalent azimuths of the [100]. Atomic force microscopy observations reveal that the corrugated pattern is composed of three types of small facets, namely, {110} and two {113} in relation of the mirror symmetry. The corrugated pattern formation is due to the geometrical restriction that there is no stable facet between (001) and (010) in the [010] azimuth. The observed morphological evolution is interpreted as surface-diffusion-driven transformation under constraint of the anisotropic surface energy of Si.

We have examined how the morphology of the trench sidewall evolves in the early phase of hydrogen annealing under the two conditions of hydrogen pressures. A distinguished result was obtained concerning the sidewall surface morphology after 30 s annealing at 1000 °C under 760 Torr hydrogen ambient. The evanescence of chemical Si dioxide formed by RCA cleaning process was clearly observed to initiate in various places on the surface. And in the area without chemical oxide, the appearance of atomic steps was also observed. In contrast under 40 Torr hydrogen ambient, the chemical oxide was completely removed even after 30 s annealing. Our observation shows that not only the rate of trench shape transformation but also the rate of removal of oxide films decreases with increasing hydrogen pressure.