This paper presents a three-stage E-band low-noise amplifier (LNA) fabricated in a 28-nm Complementary Metal Oxide Semiconductor High-Performance Compact Plus process. The proposed E-band LNA achieves a peak gain of 16.8 dB, exhibiting a gain variation of less than ±0.5 dB across the frequency range of 67.8–90.4 GHz. The measured 3-dB gain bandwidth spans from 64 to 93.8 GHz, and the minimum measured noise figure (NF) is 3.8 dB. By employing a one-stage common-source with a two-stage cascode topology, the proposed E-band LNA demonstrates competitiveness in terms of gain flatness and NF when compared to recently published E-band CMOS LNAs.

Previous literature attempted to gain insight into financial abuse involving people with dementia by analysing court cases, but these studies were limited in sample size or scope. This study collected 214 court rulings directly related to the financial decisions of people with dementia to identify characteristics of the financial abuse victim, perpetrators and the types of assets. The models of bystander intervention and routine activity theory were used as conceptual models to guide analysis regarding the role of bank staff as well as the court's decision in cases of financial abuse. The majority of financial abuse perpetrators were family members (73.8%), as opposed to outsiders (19.2%). Transfer of real estate was the most common legal issue, and land was the most common financial asset involved. Difficult intra-family relationships seem to pose a great risk of financial abuse involving people with dementia since adult children were found to be the most likely perpetrators (52.7%) but also plaintiffs accusing financial abuse (57.6%). In accordance with the bystander intervention model, bank staff were more likely to be suspicious of financial abuse when an outsider was regarded as the perpetrator. In accordance with the routine activity theory model, the court was more likely to acknowledge the case as an invalid financial decision when an outsider was regarded as the perpetrator in financial abuse cases. Since people with dementia suffer from greater losses due to their family members, future policies should establish guidelines for front-line bank staff to identify warning signs to reduce the risk of financial abuse involving people with dementia, not only to prevent fraud by outsiders but also exploitation by family members.

Numerical simulations and laboratory experiments were jointly conducted to investigate a bathtub vortex under the influence of a protruding cylinder in a rotating tank. In the set-up, a central drain hole is placed at the bottom of the tank and a top-down cylinder is suspended from the rigid top lid, with fluid supplied from the sidewall for mass conservation. The cylinder is protruded to produce the Taylor column effect. The flow pattern depends on the Rossby number ($\mathit{Ro}= U/ fR$), the Ekman number ($\mathit{Ek}= \nu / f{R}^{2} )$ and the height ratio, $h/ H$, where $R$ is the radius of the cylinder, $f$ is the Coriolis parameter, $\nu $ is the kinematic viscosity of the fluid, $h$ is the vertical length of the cylinder and $H$ is the height of the tank. It is found appropriate to choose $U$ to be the average inflow velocity of fluid entering the column beneath the cylinder. Steady-state solutions obtained by numerically solving the Navier–Stokes equations in the rotating frame are shown to have a good agreement with flow visualizations and particle tracking velocimetry (PTV) measurements. It is known that at $\mathit{Ro}\sim 1{0}^{- 2} $, the central downward flow surrounded by the neighbouring Ekman pumping forms a classic one-celled bathtub vortex structure when there is no protruding cylinder ($h/ H= 0$). The influence of a suspended cylinder ($h/ H\not = 0$) leads to several findings. The bathtub vortex exhibits an interesting two-celled structure with an inner Ekman pumping (EP) and an outer up-drafting motion, termed Taylor upwelling (TU). The two regions of up-drafting motion are separated by a notable finite-thickness structure, identified as a (thin-walled) Taylor column. The thickness ${ \delta }_{T}^{\ast } $ of the Taylor column is found to be well correlated to the height ratio and the Ekman number by ${\delta }_{T} = { \delta }_{T}^{\ast } / R= {(1- h/ H)}^{- 0. 32} {\mathit{Ek}}^{0. 095} $. The Taylor column presents a barrier to the fluid flow such that the fluid from the inlet may only flow into the inner region through the narrow gaps, one above the Taylor column and one beneath it (conveniently called Ekman gaps). As a result, five types of routes along which the fluid may flow to and exit at the drain hole could be identified for the multi-celled vortex structure. Moreover, the flow rates associated with the five routes were calculated and compared to help understand the relative importance of the component flow structures. The weaker influence of the Taylor column effect on the bathtub vortex at $\mathit{Ro}\sim 1$ or even higher $\mathit{Ro}\sim 1{0}^{2} $ is also discussed.

Owing to energy conservation of waste heat, Lead telluride, PbTe, based materials have promising good thermoelectric properties around a range of middle temperature (Fig. 1, from 300 to 600°C), due to their high melting point, fine chemical stability, and the high figure of merit Z. The general physical properties and factors affecting the figure of merit have been reviewed. This research is focused on the n-type of PbTe materials and collocated with analysis of densities, hardness, elastic modulus, and thermoelectric properties thermoelectric figure of merit ZT=GS2T/κ (where G is electrical conductivity, S is Seebeck coefficient , T is absolute temperature, and κ is thermal conductivity). Room temperature hardness and Young’s modulus are measured by nano-indentation. In this study, the hot-press compacts under the pressure of 4 ton/cm2 can reach the maximum density about 8.2 g/cm3, and hardness and elastic modulus are 0.6 GPa and 70 GPa, respectively. The figure of merit value (ZT) of PbTe in low temperature (around 340°C) was found about 1 with carrier concentration above 1019 cm−3. These results also indicate that the powder metallurgy parameters provide potentialities for further increase of the high efficiency of energy conversion in PbTe materials.

The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.

We report that the high crystalline and high efficiency green emission semipolar {101̅1} InGaN/GaN multiple quantum wells (MQWs) grown on the {101̅1} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {101̅1} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {101̅1} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {101̅1} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {101̅1} planes are promising for solving the efficiency green gap of III-nitride light emitters.

GaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) showed the red shift of the GaN near band-edge emission, which might be from oxygen incorporation forming a shallow donor-related level in GaN. HRXRD measurements revealed that (0002) InGaN layers were also successfully grown on 20nm Al2O3/ZnO substrates. In addition, thick InGaN layers (∼200-300nm) were successfully grown on Al2O3/ZnO and bare ZnO substrates. These results are significant as previous studies showed decomposition of the layer at InGaN thicknesses of 100nm or less.

A high performance of wavelength 870nm resonant cavity LED (RCLED) was fabricated. The high performance of InGaAs/GaAs multiple quantum wells (MQWs) and distributed Bragg reflector (DBR) were employed to achieve the high transmission rate. Two devices A and B were fabricated in this paper. Device A has an offset of 10nm between active region gain and resonant gain, and device B without it. Due to the wavelength shift of active region gain is faster than that of DBR's resonant gain at higher temperature. Device A shows the better temperature performances than device B. A cutoff frequency of 60MHz, a low forward voltage of 1.6V, a output power of 1mW at 10mA and a output power temperature variation (ΔP/ΔT) of –0.02dBm/ °C with chip dimensions of 220um × 220um and 85um diameter emitting window are obtained.

Salivary duct carcinoma is a rare and invasive malignant tumour with rapid distant metastasis and dismal prognosis. Clinically, perineural invasion of the salivary duct carcinoma is commonly noted. Here, we present a case of salivary duct carcinoma of submandibular gland origin with perineural invasion of the trigeminal nerve proximal to the intracranium, that was well demonstrated by a magnetic resonance image (MRI) and was consistent with the clinical presentation. This case received radical resection and radiotherapy with inclusion of the skull base within the field. There was no tumour recurrence and distant metastasis 24 months post-operatively.

A simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.