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CAN THE 14C PRODUCTION IN 1055 CE BE AFFECTED BY SN1054?
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- Journal:
- Radiocarbon / Volume 62 / Issue 5 / October 2020
- Published online by Cambridge University Press:
- 18 August 2020, pp. 1403-1418
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- October 2020
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Findings from an in-Depth Annual Tree-Ring Radiocarbon Intercomparison
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- Radiocarbon / Volume 62 / Issue 4 / August 2020
- Published online by Cambridge University Press:
- 04 September 2020, pp. 873-882
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- August 2020
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The IntCal20 Northern Hemisphere Radiocarbon Age Calibration Curve (0–55 cal kBP)
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- Radiocarbon / Volume 62 / Issue 4 / August 2020
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- 12 August 2020, pp. 725-757
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- August 2020
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High-resolution x-ray analysis of graphene grown on 4H–SiC (000
$\bar 1$) at low pressures
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- Journal of Materials Research / Volume 29 / Issue 3 / 14 February 2014
- Published online by Cambridge University Press:
- 21 November 2013, pp. 439-446
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- 14 February 2014
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Biomass Growth Rate of Trees from Cameroon Based on 14C Analysis and Growth Models
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- Journal:
- Radiocarbon / Volume 55 / Issue 2 / 2013
- Published online by Cambridge University Press:
- 09 February 2016, pp. 885-893
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- 2013
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Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J1.4
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- 2004
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Ion Implantation Induced Deep Defects in n-type 4H-Silicon Carbide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K3.3
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- 2002
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Quality of Thermally Grown Oxides in 4H-SiC over Nitrogen or Phosphorus Implanted Regions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.16
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- 2000
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Annealing of Ion Implantation Damage in SiC Using a Graphite Mask
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
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- 10 February 2011, 45
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- 1999
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SiC Power Electronic Devices, MOSFETs and Rectifiers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 3
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- 1999
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A Technique For Rapid Thick Film Sic Epitaxial Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 123
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- 1997
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High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 477
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- 1996
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Normal Incidence Photoresponse as a Function of Well Width in P-Type GaAs/AlGaAs Multi-Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 450 / 1996
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- 10 February 2011, 231
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- 1996
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Modeling of MBE Growth with Interacting Fluxes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 299 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 9
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- 1994
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