7 results
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
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- Journal:
- The European Physical Journal - Applied Physics / Volume 55 / Issue 3 / September 2011
- Published online by Cambridge University Press:
- 18 August 2011, 30101
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- September 2011
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Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
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- Journal:
- The European Physical Journal - Applied Physics / Volume 51 / Issue 1 / July 2010
- Published online by Cambridge University Press:
- 24 June 2010, 10304
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- July 2010
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Effect of carrier transfer on the PL intensity in self-assembledIn (Ga) As/GaAs quantum rings
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- Journal:
- The European Physical Journal - Applied Physics / Volume 35 / Issue 3 / September 2006
- Published online by Cambridge University Press:
- 23 August 2006, pp. 159-163
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- September 2006
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Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
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- Journal:
- The European Physical Journal - Applied Physics / Volume 30 / Issue 2 / May 2005
- Published online by Cambridge University Press:
- 04 March 2005, pp. 101-105
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- May 2005
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Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 859
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- 1991
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Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 163
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- 1989
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Electric Field Enhancement of Electron Emission from DX Centers and Consequences
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 747
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- 1989
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