Improvements to agricultural sustainability are required to maintain productivity in the face of ongoing global challenges, and growers need multiple kinds of support to adopt new sustainability practices and transform cropping systems. Farms are socio-ecological systems, and developing such systems requires tandem changes to human and nonhuman systems. This study evaluates agricultural sustainability practices and perception in the Oregon hazelnut industry, a small, intensified, and rapidly growing orchard production system in the United States. Using a mixed methods approach based on participant observation and an online survey of hazelnut growers in the spring of 2023, we found that growers were widely receptive to the sustainability messaging of industry groups and had widespread adoption of certain sustainability practices including disease-resistant tree varieties and changes in pesticide use, among other practices promoted by researchers. Larger hazelnut growers were more likely to adopt the sustainability practices in our survey, especially certain pest management practices. Growers with older hazelnut orchards turned to more sources of information but also perceived more barriers to implementing new sustainability practices than growers with younger orchards. Growers voiced different opinions about sustainability costs, with some growers expressing economic concerns about sustainability practices and others recognizing the financial benefits of sustainability practices. Differences in the perceived importance of short- and long-term benefits framed some of these concerns about the costs and benefits of sustainability practices. We argue that successful sustainability outreach will address both the short-term economic benefits of certain practices and the long-term sustainability benefits. Growers widely recognize the importance of sustainability, but more messaging about the multiple benefits of sustainability practices can better address both environmental and economic concerns.

We report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths (Xj) formed for the n+/p and p+/n junctions were 7.6 nm and 6.1 nm with sheet resistances (Rs) of 860 ohms/sq. and 704 ohms/sq., respectively. By reducing knocked-on oxygen during ion implantation in the n+/p junctions, Rs was decreased by between 5% and 15%. The lowest Rs observed was 235 ohms/sq. with a junction depth of 21.5 nm. Hall measurements clearly revealed that knocked-on oxygen degraded phosphorus activation (carrier concentration). In the p+/n Ge junctions, we show that ion implantation damage induced high boron activation. Using this technique, Rs can be reduced from 475 ohms/sq. to 349 ohms/sq. These results indicate that the potential for forming ultra-shallow n+/p and p+/n junctions in the nanometer range in Ge devices using FLA is very high, leading to realistic monolithically-integrated Ge CMOS devices that can take us beyond Si technology.

The risk of malaria outbreak surfaced in Vanuatu after Tropical Cyclone (TC) Pam in March 2015. In June and July 2015 we conducted malariometric surveys on the islands of Tanna, Aneityum, and Erromango in Tafea Province, where malaria elimination had been targeted, to determine if malaria incidence had increased after TC Pam. No Plasmodium infection was detected by microscopy and PCR in 3009 survey participants. Only 6·3% (190/3007) of participants had fever. Spleen rates in children aged ⩽12 years from Aneityum and Tanna were low, at 3·6% (14/387) and 5·3% (27/510), respectively. Overall bed net use was high at 72·8% (2175/2986); however, a significantly higher (P < 0·001) proportion of participants from Aneityum (85·9%, 796/927) reported net use than those from Tanna (67·1%, 751/1119) and Erromango (66·8%, 628/940). A recent decrease in malaria incidence in Tafea Province through comprehensive intervention measures had reduced the indigenous parasite reservoir and limited the latter's potential to spur an outbreak after TC Pam. The path towards malaria elimination in Tafea Province was not adversely affected by TC Pam.

A fully coherent free electron laser (FEL) seeded with a higher-order harmonic (HH) pulse from high-order harmonic generation (HHG) is successfully operated for a sufficiently prolonged time in pilot user experiments by using a timing drift feedback. For HHG-seeded FELs, the seeding laser pulses have to be synchronized with electron bunches. Despite seeded FELs being non-chaotic light sources in principle, external laser-seeded FELs are often unstable in practice because of a timing jitter and a drift between the seeding laser pulses and the accelerated electron bunches. Accordingly, we constructed a relative arrival-timing monitor based on non-invasive electro-optic sampling (EOS). The EOS monitor made uninterrupted shot-to-shot monitoring possible even during the seeded FEL operation. The EOS system was then used for arrival-timing feedback with an adjustability of 100 fs for continual operation of the HHG-seeded FEL. Using the EOS-based beam drift controlling system, the HHG-seeded FEL was operated over half a day with an effective hit rate of 20%–30%. The output pulse energy was $20~{\rm\mu}\text{J}$ at the 61.2 nm wavelength. Towards seeded FELs in the water window region, we investigated our upgrade plan to seed high-power FELs with HH photon energy of 30–100 eV and lase at shorter wavelengths of up to 2 nm through high-gain harmonic generation (HGHG) at the energy-upgraded SPring-8 Compact SASE Source (SCSS) accelerator. We studied a benefit as well as the feasibility of the next HHG-seeded FEL machine with single-stage HGHG with tunability of a lasing wavelength.

We investigated developmental changes during the transition from one-word to two-word production, focusing on strategies to lengthen utterances phonologically and to control utterances suprasegmentally. We hypothesized that there is a period of reorganization at the onset of word combinations indicated by decreases in both filler syllables (Fillers) and final syllable lengthening (FSL). The data are from a visually impaired child (Seth) between 1 ; 6.21 and 1 ; 10.26. Seth produced many Fillers until 1 ; 9 when their number decreased for about two weeks after which they changed in nature. FSL was observed until 1 ; 8, but diminished at 1 ; 9. These two regressions coincide with the onset of word combination.

An investigation is made of the role of hollow atoms in the spectra of an ultrashort-pulse-laser-driven Ar cluster target. Experimental measurements are presented from an Ar cluster-gas target using short-pulse lasers with various intensities, durations, and contrasts. Calculations in support of these measurements have been performed using a detailed atomic kinetics model with the ion distributions found from solution of the time-dependent rate equations. The calculations are in good agreement with the measurements and the role of hollow atoms in the resulting complicated spectra is analyzed. It is demonstrated that, although the presence of hollow atoms is estimated to add only around 2% to the total line emission, signatures of hollow atom spectra can be identified in the calculations, which are qualitatively supported by the experimental measurements.

High-resolution K-shell spectra of a plasma created by superintense laser irradiation of micron-sized Ar clusters have been measured with an intensity above 1019 W/cm2 and a pulse duration of 30 fs. The total photon flux of 2 × 108 photons/pulse was achieved for Heα1 resonant line of Ar (λ = 3.9491 Å, 3.14 keV). In parallel with X-ray measurements, energy distributions of emitted ions have been measured. The multiply charged ions with kinetic energies up to 800 keV were observed. It is found that hot electrons produced by high contrast laser pulses allow the isochoric heating of clusters and shift the ion balance toward the higher charge states, which enhances both the X-ray line yield of the He-like argon ion and the ion kinetic energy.

We review our capacitor technology using (Ba,Sr)TiO3 (BST) as a capacitor dielectric for dynamic random access memory (DRAM) application. Among a number of issues for BST capacitor process integration in DRAM cells, two important technologies are discussed. As an electrode technology, we propose All PErovskite Capacitor (APEC) technology, in which conducting perovskite oxide of SrRuO3 (SRO) is used as capacitor electrodes. For chemical vapor deposition (CVD) of BST, we propose In-situ Multi-Step (IMS) process, which is a sequential repetition of low temperature deposition of ultra thin BST film and crystallization in the same chamber. By using APEC technology and IMS CVD process of BST, we can simultaneously achieve good electrical characteristics (low leakage current and high permittivity) and good step coverage. The combination of APEC technology and IMS CVD process of BST is a promising BST capacitor process technology for future DRAMs.

We have developed a new interconnect technique using a low-k (εt,=2.5) organic interlayer (fluorinated amorphous carbon: a-C:F) and a low-resistivity metal line (copper). The new technique attains a duction in both the capacitance of the interlayer and the resistance of the metal line. We found that a-C:F on Cu reduces reflection to 10% for Kr-F line lithography. However, a-C:F cannot act as a protection layer for oxidation even at 200°C in atmospheric ambient annealing. Cu diffusion into a-C:F is about 100 nm at the annealing temperature of 450°C. The resistivity of the Cu line is 2.3–2.4 μΩ · cm for the 0.5-μm line width. Although the leakage current of the a-C:F ILD is one order higher than that of the SiO2 ILD, electrical isolation is acceptable at < 20 V when annealing is carried out at 350°C in a vacuum.

Chlorine radicals generated with UV irradiation are effectively used to remove residual metal contaminants after vatious LSI processes. Aluminum, iron, and copper atoms are effectively removed as volatile chloride species from silicon surfaces. The mechanism has been studied using silicon wafers intentionally contaminated with those metal ions. Contaminants are involved in native oxides as metal oxides or hydroxides. Chlorine radicals penetrate the native oxides and attack those oxides or hydroxides vaporizing metal chlorides. The cleaning process is accompanied with slight etching of silicon surfaces to a depth as thin as a few nm. However, this is not essential because the substrate temperature is more important than the etching depth. Alkaline metals are also removed from the surfaces to the level as small as the detection limit of atomic absorption spectroscopy. We believe that those are removed through a lift-off process. The, wixture of fluorine and hydrogen gases removes a native oxide of silicon under UV irradiation. Hydrogen fluoride radicals react with native oxide resulting in hydrogen termination on silicon dangling bonds. These cleaning processes are advantageous for low temperature silicon epitaxy, reliable contact formation, and thin gate oxide growth.