7 results
Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 7 / Issue 3-4 / June 2015
- Published online by Cambridge University Press:
- 05 February 2015, pp. 287-296
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InAlN/GaN HEMTs based L-band high-power packaged amplifiers
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 6 / Issue 6 / December 2014
- Published online by Cambridge University Press:
- 25 February 2014, pp. 565-572
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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 3 / Issue 3 / June 2011
- Published online by Cambridge University Press:
- 21 April 2011, pp. 301-309
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Multilayer antidiffusion barrier schemes for Schottky and ohmic contact metallisations to InAlN/GaN HEMTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1298 / 2011
- Published online by Cambridge University Press:
- 11 March 2011, mrsf10-1298-t05-09
- Print publication:
- 2011
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Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 23 March 2010, pp. 105-114
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Application of ZnO to Passivate the GaN-based Device Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1035 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 1035-L08-08
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- 2007
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Deuterium Out-Diffusion Kinetics in Magnesium-Doped GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 994 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0994-F03-22
- Print publication:
- 2007
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