13 results
Temperature Distribution in InGaN-MQW LEDs under Operation
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 647-653
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- 2000
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Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 754-760
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- 2000
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Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 22-27
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- 2000
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Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W1.6
- Print publication:
- 1999
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Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.50
- Print publication:
- 1999
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Temperature Distribution in InGaN-MQW LEDs Under Operation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.18
- Print publication:
- 1999
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GaN based LED's with different recombination zones
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e44
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- 1997
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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e26
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- 1997
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Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e4
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- 1997
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Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e15
- Print publication:
- 1997
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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e19
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- 1996
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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e13
- Print publication:
- 1996
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Determination of the dislocation densities in GaN on c-oriented sapphire
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e40
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- 1996
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