Gross well-width fluctuations have been observed in single green-emitting InGaN/GaN quantum wells (QWs) grown by two methods: (i) a “two-temperature” method, where the GaN barrier has been grown at a higher temperature than the InGaN layer, (ii) a single-temperature method, where the InGaN was annealed in a flow of NH3/N2, prior to capping. InGaN epilayers analogous to these QW structures have been grown and characterized by atomic force microscopy (AFM) and transmission electron microscopy (TEM). AFM reveals a network of interlinking InGaN strips. Compositional analysis across the InGaN strips has shown that the centres of these strips to be indium-rich compared to the strip-edges. Furthermore, we have correlated the position of threading dislocations (TDs) in relation to these InGaN strips and determined that 90 % of the TDs terminate at the channels between the InGaN strips or near the edges of the strips. We propose that confinement of charge carriers occurs in the indium-rich regions at the centre of the InGaN strips, preventing non-radiative recombination losses at dislocation sites.