In this study, we experimentally evaluate the ion transportation through a cone guide target, which accelerates ions up to MeV energies via target normal sheath acceleration, and transports them onto the position of imploding fuel in the fast ignition scenario of nuclear fusion. We measured the electric and magnetic fields (EM-fields) induced by return current streaming along the cone wall by proton radiography, and we report that the EM-fields are predominantly induced within a temporal window up to 30 ps after the laser injection. The magnitude of the electric field is maximized around 13 ps, reaching $4.0\times 10^{10} \mathrm {V}\ \mathrm {m}^{-1}$, when the magnetic field is below 200 T. The present scheme provides insights on the EM-fields evaluation in the time region that is difficult to treat with simulations due to the computing resources.

Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.