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15 results

  • In situ TEM Study of Ferroelectric Oxide Heterostructures

  • Myung-Geun Han, Yangyang Zhang, Nagarajan Valanoor, Frederick Walker, Charles H. Ahn, Yimei Zhu
  • Journal:
    / Volume 28 / Issue S1 / August 2022
    Published online by Cambridge University Press:
    22 July 2022, pp. 2264-2266
    Print publication:
    August 2022
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  • Cryogenic Electron Microscopy on Strongly Correlated Quantum Materials

  • Myung-Geun Han, Lijun Wu, Yimei Zhu
  • Journal:
    / Volume 28 / Issue S1 / August 2022
    Published online by Cambridge University Press:
    22 July 2022, pp. 2580-2581
    Print publication:
    August 2022
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  • Stroboscopic Imaging Using RF Strip-Line Technology

  • Spencer A. Reisbick, Myung-Geun Han, Chuhang Liu, Yubin Zhao, Eric Montgomery, Chunguang Jing, Yimei Zhu
  • Journal:
    / Volume 28 / Issue S1 / August 2022
    Published online by Cambridge University Press:
    22 July 2022, pp. 2866-2867
    Print publication:
    August 2022
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  • In situ cryo-electron microscopy of two-dimensional van der Waals magnets

  • Myung-Geun Han, Yimei Zhu, Sang-Wook Cheong
  • Journal:
    / Volume 27 / Issue S1 / August 2021
    Published online by Cambridge University Press:
    30 July 2021, pp. 326-328
    Print publication:
    August 2021
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  • Characterization of Semiconductor Materials Using Electron Holography

  • Lin Zhou, Zhaofeng Gan, Myung-Geun Han, David J. Smith, Martha R. McCartney
  • Journal:
    / Volume 23 / Issue S1 / July 2017
    Published online by Cambridge University Press:
    04 August 2017, pp. 1404-1405
    Print publication:
    July 2017
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  • In Situ Electron Holography of Ferroelectric Thin Films

  • Myung-Geun Han, Matthew S. J. Marshall, Lijun Wu, Frederick J. Walker, Charles H. Ahn, Yimei Zhu
  • Journal:
    / Volume 21 / Issue S3 / August 2015
    Published online by Cambridge University Press:
    23 September 2015, pp. 1401-1402
    Print publication:
    August 2015
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  • Sample Preparation for Precise and Quantitative Electron Holographic Analysis of Semiconductor Devices

  • Myung-Geun Han, Jing Li, Qianghua Xie, Peter Fejes, James Conner, Bill Taylor, Martha R. McCartney
  • Journal:
    / Volume 12 / Issue 4 / August 2006
    Published online by Cambridge University Press:
    14 July 2006, pp. 295-301
    Print publication:
    August 2006

  • Wedge polishing was used to prepare one-dimensional Si n-p junction and Si p-channel metal-oxide-silicon field effect transistor (pMOSFET) samples for precise and quantitative electrostatic potential analysis using off-axis electron holography. To avoid artifacts associated with ion milling, cloth polishing with 0.02-μm colloidal silica suspension was used for final thinning. Uniform thickness and no significant charging were observed by electron holography analysis for samples prepared entirely by this method. The effect of sample thickness was investigated and the minimum thickness for reliable results was found to be ∼160 nm. Below this thickness, measured phase changes were smaller than expected. For the pMOSFET sample, quantitative analysis of two-dimensional electrostatic potential distribution showed that the metallurgical gate length (separation between two extension junctions) was ∼54 nm, whereas the actual gate length was measured to be ∼70 nm by conventional transmission electron microscopy. Thus, source and drain junction encroachment under the gate was 16 nm.