We investigate boron transient enhanced diffusion (TED) and series resistance in SiGe/Si heterojunction channel pMOSFET. The stress gradient at the SiGe/Si interface near the gate edge in high Ge concentrations are found to determine boron TED as well as extension junction shape, which has a significant impact on the parasitic LDD and source/drain (S/D) series resistance. In addition, high Ge concentrations in the epitaxial SiGe layer on top of Si substrate result in a high sheet resistance during a 1000°C/5s rapid thermal processing (RTP), which is mainly due to alloy scattering and interface roughness scattering.

The use of millisecond annealing to meet ultra-shallow junction requirements for sub-45nm CMOS technologies is imperative. In this study, the effect of flash anneal parameters is presented. Reduced dopant diffusion and lower sheet resistance Rs is achieved for intermediate temperature T int = 700°C (vs. 800°C). Significantly lower Rs is achieved with peak temperature Tpeak = 1300°C (vs. 1250°C). Multiple shots provide for lower Rs, albeit at the expense of increased dopant diffusion. Based on a simple quantitative model, an optimal flash anneal can achieve 82% dopant activation efficiency.

A MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the fully depleted body and the gate-all-around architecture implemented with a high-κ dielectric and metal gate. At the same time this also allows a high drive current due to mobility enhancements arising from volume inversion of the cantilever channel such that a large ION/IOFF is achieved.

Highly (111)-oriented and conformal iridium (Ir) films were deposited by a liquid source metalorganic-chemical-vapor-deposition process on various substrates. An oxygen-assisted pyrolysis of (methylcyclopentadienyl) (1,5-cyclooctadiene) Ir precursor at a wide range of substrate temperatures (Tsub) between 300 and 700 °C was used. At a low Tsub of 350 °C, the randomly oriented polycrystalline films exhibited an I111/I200 x-ray intensity ratio of 6. However, the films deposited at Tsub = 700 °C on native SiO2 and amorphous SiO2 surfaces were highly oriented with the I111/I200 ratios of 277 and 186, respectively. The transmission electron microscopy study revealed continuous, dense, and faceted microstructures of Ir films. Also, the step coverage of Ir on TiN (64%) was higher than that on amorphous SiO2 (50%) surfaces.