Thin (CsCl)CoSi films of thicknesses from 44 to 105 Å were grown by MBE at room temperature onto ultrathin annealed CoSi2 templates. Also two CoSi2 films of about 100 Å with the CaF2 structure and with the defected CsCl structure were obtained epitaxially.
Far infrared reflectance and transmittance measured on such samples show optical structures between 240 and 370 cm-1. In the range 1.4–5 eV spectroscopic ellipsometry was performed, too. A change in the optical response was revealed among the different samples, which can be ascribed to strain, roughness and/or disorder at the interfaces.