The use of underground geological repositories, such as in radioactive waste disposal (RWD) and in carbon capture (widely known as Carbon Capture and Storage; CCS), constitutes a key environmental priority for the 21st century. Based on the identification of key scientific questions relating to the geophysics, geochemistry and geobiology of geodisposal of wastes, this paper describes the possibility of technology transfer from high-technology areas of the space exploration sector, including astrobiology, planetary sciences, astronomy, and also particle and nuclear physics, into geodisposal. Synergies exist between high technology used in the space sector and in the characterization of underground environments such as repositories, because of common objectives with respect to instrument miniaturization, low power requirements, durability under extreme conditions (in temperature and mechanical loads) and operation in remote or otherwise difficult to access environments.

Anxiety and depression are highly prevalent and frequently co-morbid conditions. The ionotropic glutamate receptors N-methyl-d-aspartate and α-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) mediate actions of monoaminergic antidepressants and have been directly targeted by novel fast-acting antidepressants. Less is known about the role of these receptors in anxiety-like states. Here we investigate how two distinct anxiolytic agents, buspirone, a partial 5-HT1A agonist, and diazepam, a benzodiazepine, influence phosphorylation of GluA1 subunits of AMPA receptors at the potentiating residue Ser845 and Ser831 in corticolimbic regions. To test the functional relevance of these changes, phosphomutant GluA1 mice lacking phosphorylatable Ser845 and Ser831 were examined in relevant behavioural paradigms. These mutant mice exhibited a reduced anxiety-like phenotype in the light/dark exploration task and elevated plus maze, but not in the novelty induced hypophagia paradigm. These data indicate that reduced potentiation of the AMPA receptor signalling, via decreased GluA1 phoshorylation, is specifically involved in approach–avoidance based paradigms relevant for anxiety-like behaviours.

It is now apparent that future generations of fast electronics and compact sensors may need to rely increasingly on integrated optical components. But integration of electronics and photonics in today's IC's is challenging. Silicon, the ubiquitous electronic material, is neither ideally suited for most photonic functions nor readily integrated with most of the common photonic materials, such as GaAs. The approach we describe here relies on GaN-based films, which can be grown directly on silicon substrates and hence can be potentially integrated with state-of-the-art Si-based electronics. We have demonstrated the fabrication of GaN structures on silicon wafers ranging in overall size from sub-micron to several millimeters, all containing highly accurate individual features on the nm scale. As proof of concept, we have fabricated GaN optical waveguides and photonic crystals containing optical cavities by patterning GaN membranes grown directly on Si wafers. Our optical cavities were designed to have resonant modes within the spectral region of the broad defect-induced luminescence of GaN. We have measured sharp resonant features associated with these cavities by optically pumping above the GaN band edge, and have compared the data to numerical simulations of the spectra. Our results to date demonstrate the feasibility of fabricating high-quality GaN photonic structures directly on Si wafers, thereby providing a possible path to achieving true integration of electronics and photonics in future generations of IC's.

Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films grown by metallorganic chemical vapor deposition (MOCVD) on the (0001) surface of epitaxially-grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations.

Front tracking simulations of the Richtmyer-Meshkov instability produce significantly better agreement with experimentally measured growth rates than obtained in nontracking computations. Careful analysis of the early stages of the shock acceleration process show that nonlinearity and compressibility play a critical role in the behaviour of the shocked interface and are responsible for the deviations from the linear theories. The late-time behaviour of the interface growth rate is compared to a nonlinear potential flow model of Hecht et al.

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Silicon carbide (SiC) is rapidly becoming the substrate of choice for the development of high frequency and high power electronic devices employing the III-V nitride family of materials. This heteroepitaxial growth system continues to receive considerable attention, as materials issues remain the fundamental limiters to device performance. The heteroepitaxial growth of gallium nitride (GaN) thin films on stepped and step-free 4H SiC surfaces is reported. Step-free SiC surfaces are created by mesa patterning of a SiC wafer and subsequent epitaxial growth in a process described previously. This process results in a collection of both step-free and stepped surfaces on a given sample. We have employed an established metalorganic chemical vapor deposition process to grow first a thin (1200Å) aluminum nitride (AlN) nucleation layer and then a 2 μm thick GaN thin film. We have interrupted growth at various stages of AlN and GaN growth to evaluate the growth evolution using atomic force microscopy (AFM). The results show marked differences in the manner in which the initial AlN layer deposits. Nucleation is random with elongated grains on step-free SiC surfaces, while stepped surfaces have round nuclei of uniform dimensions and a high degree of spatial correlation with the nuclei arranged in rows. These differences diminish as the AlN layer approaches the desired thickness. Growth of the GaN epilayer is also markedly different on the two types of surfaces with step-free surfaces leading to random and low density nucleation of crystallites that remain as single grains for long growth times, whereas the stepped surfaces have large numbers nuclei that rapidly grow laterally. Cross-sectional transmission electron microscopy (TEM) reveals that grain sizes are 2–3X larger on step-free surfaces.

Conjugated light-emitting polymers (LEPs) have real potential to serve as the active layer in a new generation of emissive displays. Emerging as lead candidates for first-generation displays are poly(1,4-phenylene vinylene)s (PPVs) and poly(9,9-dialkylfluorene)s, as well as other polyaromatic materials. The poly(fluorene)s are at present the most commercially developed of these LEP materials for red–green–blue (RGB) applications. The low power consumption of LEP devices in general makes them particularly suited to mobile applications. Combining solution-processable emissive polymers with direct-patterning methods such as ink-jet printing will lead to the possibility of low-cost, high-resolution displays. The synthesis and properties of PPVs and poly(9,9-dialkylfluorene)s are briefly reviewed in this article, with a major focus on recent developments.

Richtmyer–Meshkov instability is investigated for negative Atwood number and two-dimensional sinusoidal perturbations by comparing experiments, numerical simulations and analytic theories. The experiments were conducted on the NOVA laser with strong radiatively driven shocks with Mach numbers greater than 10. Three different hydrodynamics codes (RAGE, PROMETHEUS and FronTier) reproduce the amplitude evolution and the gross features in the experiment while the fine-scale features differ in the different numerical techniques. Linearized theories correctly calculate the growth rates at small amplitude and early time, but fail at large amplitude and late time. A nonlinear theory using asymptotic matching between the linear theory and a potential flow model shows much better agreement with the late-time and large-amplitude growth rates found in the experiments and simulations. We vary the incident shock strength and initial perturbation amplitude to study the behaviour of the simulations and theory and to study the effects of compression and nonlinearity.

Thirty-two N'Dama heifers were offered ad libitum Andropogon hay plus 10·2 g/kg liveweight (LW) groundnut hay (GNH) (L) or 10·2 g/kg LW GNH and 3·9 g/kg LW groundnut cake (GNC) (H). After 4 weeks on the diets, half of each group were infected intradermally with Trypanosoma congolense clone (ITC 50) (LI and HI). Peak parasitaemia occurred 6–8 days after infection and started to decrease c. 56 days later. No differences in parasitaemia were observed between LI and HI animals. Packed cell volume (PCV) fell in all treatments (by 5·4, 13·8, 3·7 and 9·4 units after 49–63 days post-infection (p.i.) for the L, LI, H and HI groups respectively) and significant effects of infection and diet were observed. GNH and GNC intakes were maintained during the trial; however, infected animals had a decreased intake of Andropogon hay. LI animals lost significantly more weight during the experimental period than the non-infected controls (−71·4 v. −13·7 g/day). Meanwhile, HI animals gained less weight compared with the H group (52·2 v. 167·6 g/day). Weight losses appeared to be due to decreased food intake. In the period 54–68 days p.i., plasma concentrations of albumin were lower and plasma protein was higher in infected animals. Plasma cholesterol concentrations were also lower in infected animals 54–68 days p.i. Plasma urea concentrations were higher in supplemented animals but were not affected by infection. The results showed that animals on a higher plane of nutrition showed less severe clinical signs of infection. However, for all the parameters considered, the magnitude of the difference between groups on different diets was similar for both infected and control animals, suggesting that mechanisms of resistance were not affected by the planes of nutrition considered.