The opportunity of development the short-term forecasting technique of geoeffective solar flares is presented in this study. This technique is based on the effect of growth the fluctuations of horizontal component of geomagnetic field before the solar proton flares, that is considered as a prognostic parameter of solar proton flares.

An international Low Frequency VLBI Network (LFVN) has been organized for observations at 327 MHz and 1665 MHz frequencies with MARK-II and S2 recording terminals. Data on the interplanetary medium and spike-like solar bursts were obtained in first preliminary experiments.

PL studies of oxygen precipitation related defects, stress relaxation related defects and doping striations in various silicon materials are presented. The sample spectrum includes a variety of dopant species, and the dopant concentration range covers several 1014 cm-3 to several 1019 cm-3. Lightly doped, precipitation-annealed polished wafers were intentionally contaminated with Fe, Ni and Cu. Several types of epi wafers based on heavily doped substrates have been investigated after full device processing. PL intensity in the investigated doping concentration range is controlled by three basic recombination mechanisms: radiative recombination competing with multi phonon Shockley-Read-Hall (SRH) and Auger recombination. SRH recombination is the major competing mechanism at low dopant concentration, and Auger recombination becomes important at increasing doping levels. Even though not yet fully understood, the PL technique applied in this study has generated practically useful results.