We present the third data release from the Parkes Pulsar Timing Array (PPTA) project. The release contains observations of 32 pulsars obtained using the 64-m Parkes ‘Murriyang’ radio telescope. The data span is up to 18 yr with a typical cadence of 3 weeks. This data release is formed by combining an updated version of our second data release with $\sim$3 yr of more recent data primarily obtained using an ultra-wide-bandwidth receiver system that operates between 704 and 4032 MHz. We provide calibrated pulse profiles, flux density dynamic spectra, pulse times of arrival, and initial pulsar timing models. We describe methods for processing such wide-bandwidth observations and compare this data release with our previous release.

A wide class of materials that were discovered to carry a topologically protected phase order has led to a highly active area of research called topological insulators (TIs). This phenomenon has radically changed our thinking because of the robust quantum coherent behavior showing two-dimensional Dirac-type metallic surface states (SSs) and simultaneously insulating bulk states. The Dirac SSs are induced by the strong spin–orbit coupling as well as protected by time reversal symmetry (TRS). Breaking TRS in a TI with ferromagnetic perturbation can lead to many exotic quantum phenomena, such as the quantum anomalous Hall effect, topological magnetoelectric effect, as well as image magnetic monopole. This article presents an overview of the current status of TRS breaking in TIs and outlines the prospects for future studies.

Interconnected microstructural ZnO:Al thin films with low doping concentration (Al/Zn ≤1%) were deposited on (0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the (002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased.

Finite-difference solutions of the equations of motion for steady incompressible flow around a circular cylinder have been obtained for a range of Reynolds numbers from R = 5 to R = 100. The object is to extend the Reynolds number range for reliable data on the steady flow, particularly with regard to the growth of the wake. The wake length is found to increase approximately linearly with R over the whole range from the value, just below R = 7, at which it first appears. Calculated values of the drag coefficient, the angle of separation, and the pressure and vorticity distributions over the cylinder surface are presented. The development of these properties with Reynolds number is consistent, but it does not seem possible to predict with any certainty their tendency as R → ∞. The first attempt to obtain the present results was made by integrating the time-dependent equations, but the approach to steady flow was so slow at higher Reynolds numbers that the method was abandoned.

Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

TiNi shape memory alloy (SMA) has potential applications for nuclear reactors and its phase stability under irradiation is becoming an important topic. Some irradiation-induced diffusion-dependent phase transformations, such as amorphization, have been reported before. In the present work, the behavior of diffusion-independent phase transformation in TiNi SMA was studied by electron irradiation at room temperature. The effect of irradiation on the martensitic transformation of TiNi shape memory alloys was studied by Transmission Electron Microscopy (TEM) with in-situ observation and differential scanning calorimeter (DSC). The results of TEM and DSC measurements show that the microstructure of samples is R phase at room temperature. Electron irradiations were carried out using several different TEM with accelerating voltage of 200 kV, 300 kV, 400 kV and 1000 kV. Also the accelerating voltage in the same TEM was changed to investigate the critical voltage for the effect of irradiation on phase transformation. It was found that a phase transformation occurred under electron irradiation above 320 kV, but never appeared at 300 kV or lower accelerating voltage. Such phase transformation took place in a few seconds of irradiation and was independent of atom diffusion. The mechanism of Electron-irradiation-induced the martensitic transformation due to displacements of atoms from their lattice sites produced by the accelerated electrons.

TiNi shape memory alloy samples were irradiated within R-phase by 1.7 MeV electrons with different doses. The martensitic transformation temperatures were measured by Differential Scanning Calorimeter (DSC). The results indicated that the temperature M s of the onset of R-phase-to-martensite transformation decreased with increasing the dose. The electron irradiation had a slight effect on the other transformation temperatures. The second lifetime of positrons determined by Positron Annihilation Technology were lowered with an increment of the irradiated dose. Relaxation of the elastic stress fields around the Ti3Ni4 precipitates was the cause of the observed change of the transformation characteristics because of the migration and accumulation of electron irradiation-induced point defects.

64-keV Ni ion implantation was performed at room temperature up to a dose of 1×1017 cm-2 in α-Al2O3 single crystals. The charge states, structure and optical properties of metallic embedded Ni nanoparticles were studied by using X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical spectroscopy, respectively. XPS analysis showed that implanted Ni ions are mainly in charge state of metallic Ni0. Nanoparticles distributed from the surface to 30 nm below the surface were observed in a bright-field cross-sectional image. The size of nanoparticles ranges from 1 to 5 nm in diameter. A selected area electron diffraction (SAED) pattern shows Ni nanoparticles with lattice parameter a = 0.352 nm. A high-resolution electron microscopy (HREM) image indicated the Ni-implanted area had been entirely amorphized. A new broad absorption band centered at 400 nm appeared in the optical absorption spectrum of the as-implanted crystal, due to surface plasma resonance (SPR) of Ni nanoparticles.

YSZ and MgAl2O4-YSZ composite are two promising materials as in the inert matrix nuclear fuel for the incineration of plutonium. In this study, 400 keV Cs ions were implanted to a fluence of 1×1017 ions/m2 in both materials in order to investigate the retention behavior of fission product at elevated temperature. The implantations were completed at room temperature for the YSZ and 973 K for MgAl2O4-YSZ, respectively. Subsequent annealing at 1273 K was performed after a room temperature implantation of YSZ. After annealing, a high density of gas bubbles formed with diameter from 3 to 40 nm from the surface to a depth of 150 nm in the YSZ matrix. The swelling due to bubbles formation was estimated to be 2.5%. In situ TEM was employed during high temperature ion implantation of the MgAl2O4-YSZ composite. A high density of small bubbles with 5 nm in diameter formed in the MgAl2O4 and YSZ grains after an ion dose of 1×1017 ions/cm2. There was no preferential precipitation along grain boundaries. Electron Paramagnetic resonance (EPR) spectroscopy was used to investigate the type of defects that formed in the YSZ matrix.

Ion backscattering and channeling techniques have been employed to measure the etching rate of amorphous and single crystal Si by XeF2 under similar conditions.Both (100) Si on sapphire and (111) Si on spinel showed higher etching rates compared to amorphous Si.However, measurements of the etching rate using a Si cell aligned to the axis and along the planes under similar conditions did not show appreciable difference in the etching rate compared to the etching rate with random orientation of the cell.Presence of the analyzing 4He+ beam during etching enhances the etching rate to twice the value when compared to post etching analysis with the same beam.The enhancement of the etching rate due to ion induced decomposition of XeF2 have been considered in the explanation of the experimental results.