Mid-aortic syndrome is an uncommon vascular disease characterised by lower thoracic and upper abdominal aorta stenosis and can occur even in neonatal or infant periods. Here, we report an interesting case of a 2-month-old female with diffuse hypoplasia of the lower abdominal aorta and secondary dilated cardiomyopathy. In our patient, her abdominal aortic narrowing spontaneously normalised over time with the administration of consistent and goal-directed heart failure therapy, supporting adequate growth and natural recovery.

Allicin (AL) regulates the cellular redox, proliferation, viability, and cell cycle of different cells against extracellular-derived stress. This study investigated the effects of allicin treatment on porcine oocyte maturation and developmental competence. Porcine oocytes were cultured in medium supplemented with 0 (control), 0.01, 0.1, 1, 10 or 100 μM AL, respectively, during in vitro maturation (IVM). The rate of polar body emission was higher in the 0.1 AL-treated group (74.5% ± 2.3%) than in the control (68.0% ± 2.6%) (P < 0.1). After parthenogenetic activation, the rates of cleavage and blastocyst formation were significantly higher in the 0.1 AL-treated group than in the control (P < 0.05). The reactive oxygen species level at metaphase II did not significantly differ among all groups. In matured oocytes, the expression of both BAK and CASP3, and BIRC5 was significantly lower and higher, respectively, in the 0.1 AL-treated group than in the control. Similarly, the expression of BMP15 and CCNB1, and the activity of phospho-p44/42 mitogen-activated protein kinase (MAPK), significantly increased. These results indicate that supplementation of oocyte maturation medium with allicin during IVM improves the maturation of oocytes and the subsequent developmental competence of porcine oocytes.

Blackberry is a fruiting berry species with very high nutrient contents. With the recent increasing consumer demand for blackberries, new sources of germplasm and breeding techniques are required to improve blackberry production. This study was carried out to evaluate the genetic diversity (GD) and relationship among 55 blackberry (Rubus fruticosus) mutants derived from γ-ray treatment (52 lines) and N-methyl-N′-nitrosourea (MNU) treatment (three lines) using an inter-simple sequence repeat marker. A total of 18 bands were amplified with an average of 3.6 bands per primer. Among them, eight bands were identified to be polymorphic with a rate of 44.4%. In addition, the GD information content values were highest in the 60 Gy treatment population and the GD values were higher in the γ-ray treatment populations than in the MNU treatment population. According to a cluster analysis, all the mutant lines can be classified into five categories, and the genetic distance was greatest between the 80 Gy-irradiated population and other populations. These results indicate that mutant lines have high GD and can be effectively utilized for improving blackberry breeding.

In this study, a near-isogenic line (BC4F10) CR572 developed by introgressing a chromosomal segment from Oryza rufipogon (accession no. 105491) into the Oryza sativa subsp. japonica cv. Hwaseong was found to exhibit a significant increase in the number of spikelets per panicle (SPP) and grain weight compared with the recurrent parent Hwaseong. Quantitative trait locus (QTL) analysis in F2 generation derived from the cross between CR572 and Hwaseong revealed that two QTLs, qSPP1 and qTGW1, were linked to a simple sequence repeat marker, RM283, on chromosome 1. The additive effect of the O. rufipogon allele at qSPP1 was 13 SPP, and 21.6% of the phenotypic variance was explained by the segregation of RM283. The qTGW1 QTL explained 19.1% of the phenotypic variance for grain weight. Substitution mapping was carried out with five F3 lines derived from F2 plants having informative recombination breakpoints within the target region. Substitution mapping indicated the linkage of qSPP1 and qTGW1. The grain yield of CR572 was 18.2 and 15.8% higher than that of Hwaseong at two locations, respectively, mainly due to the increase in 1000-grain weight and SPP. These results are very useful for QTL cluster transfer by molecular marker-assisted selection in rice breeding programmes and for QTL gene cloning by map-based cloning.

The liquid phase plasma reduction method has been applied to prepare silver nanoparticles from a solution of silver nitrate (AgNO3) using a bipolar pulsed electrical discharge system. The excited states of atomic silver, hydrogen and oxygen as well as the molecular bands of hydroxyl radicals were detected in the emission spectra. As the discharge duration increased up to 10 min, silver particle peaks produced by surface plasmon absorption were observed around 430 nm. Both the particle size and the particle numbers were observed to increase with the length of the plasma treatment time and with the initial AgNO3 concentration. Spherical nanoparticles of about 5–20 nm in size were obtained with the discharging time of 5 min, whereas aggregates of nanoparticles of about 10–50 nm in size were mainly produced with the discharging time of 20 min. The cationic surfactant of cetyltrimethylammonium bromide (CTAB) added with the CTAB/AgNO3 molar ratio of 30% was shown to inhibit nanoparticle aggregation.

The oxidation behavior of Cu50Zr50 and Cu46Zr46Al8 glasses during continuous heating up to 1073 K has been investigated, with special emphasis on the oxidation resistance in the supercooled liquid (SCL) state. For Cu50Zr50, the oxide layer mostly consists of monoclinic ZrO2 (m-ZrO2), while for Cu46Zr46Al8, the oxide layer consists of two different layers: an outer layer consisting of tetragonal ZrO2 (t-ZrO2) + Al2O3 + metallic Cu (oxidation product from the SCL state of the glass matrix) and inner layer comprised of m-ZrO2 + metallic Cu islands (oxidation product from the crystallized matrix). Cu-enriched regions consisting of Cu51Zr14 (in Cu50Zr50) or AlCu2Zr + Cu70Zr15Al15 + Cu51Zr14 (in Cu46Zr46Al8) are present below the oxide layer. The present study shows that the addition of Al (8 at.%) in Cu50Zr50 results in a significant deterioration of the oxidation resistance in the SCL state since the solutionizing of Al in t-ZrO2 leads to a higher oxygen ion vacancy concentration, thus providing a higher activity of oxygen ions.

We report the microstructures and dielectric properties of Ca1-xSrxCu3Ti4O12 (C1-xSxCTO, 0≤x≤1) ceramics sintered at the various sintering temperatures ranging from 1000 to 1060˚C in air. The linear increase in lattice parameter in C1-xSxCTO (0≤x≤1) ceramics is observable for the full range of substitution. However, the second phases of SrTiO3 and CuO start to occur from the composition of x=0.8, implying that a stoichiometric SrCu3Ti4O12 (SCTO) compound may not exist. While the C0.6S0.4CTO and C0.4S0.6CTiO samples exhibit relatively lower dielectric constant (εr) of ∼40,000 below 1 kHz, the CaCu3Ti4O12 (CCTO) and SCTO show the extremely high εr values of ~120,000 and ∼180,000, respectively. Complex impedance (Z*) and modulus (M*) spectroscopy revealed that the capacitance (C) and resistivity (ρ) values of grain boundary in all samples are much higher than those of grains.

We report a significant improvement in the electrical properties of CaCu3Ti4O12 (CCTO) dielectrics by the BaTiO3 (BTO) additive. The addition of BTO to CCTO was performed using two different methods of a solid-state mixing and a sol-gel coating. Compared with pure CCTO ceramics (εr ∼ 52,000 and tanδ ∼ 0.38 at 100 kHz), BTO-added CCTO samples commonly showed a large improvement in the dielectric loss property although their dielectric constants were depressed around one order of magnitude; εr ∼ 5900 and tanδ ∼0.05 for 5 mol% BTO-coated CCTO sample and εr ∼ 4,075 and tanδ ∼ 0.02 for 5 mol% BTO-mixed CCTO sample. In addition, BTO-coated CCTO samples showed relatively lower leakage current than those of BTO-mixed CCTO samples, implying that the sol-gel coating is more effective for improving the electrical properties of CCTO.

We investigated microstructures, compositional distributions, and electrical properties of dielectric CaCu3Ti4O12 (CCTO) thin films deposited on Pt/TiO2/SiO2/Si substrates from 700 to 800 °C by pulsed laser deposition. With increasing the deposition temperature from 700 to 750 °C, the dielectric constants (εr) of CCTO films were greatly enhanced from ∼300 to ∼2000 at 10 kHz, respectively. However, the εr values of CCTO films were gradually decreased above 750 °C, which was surely attributable to the formation of a TiO2-rich dead layer at the interface between CCTO and Pt electrode. Compositional analyses by Auger electron spectroscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy revealed that the TiO2-rich dead layer became thicker because of severe Cu diffusion from CCTO films to Pt electrode. The leakage current behaviors of CCTO films are in good agreement with Poole–Frenkel conduction mechanism, where both the TiO2-rich dead layer and rutile TiO2 nanocrystalline particles are considered to play a role of charge trapping centers.

The hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic

Size-tuned ZnO nanorod arrays (NRAs), aligned well vertically and laterally, were synthesized by catalyst-free, metalorganic chemical vapor deposition on GaN-buffered Al2O3 (0001) substrates by adjusting the O/Zn precursor ratio in the reactor. Their electrical transport properties were investigated using field effect transistors based on individual ZnO nanorods. We find that the carrier concentrations and mobilities in the nanorods are not very sensitive to the change of the precursor ratio. This suggests that altering the precursor ratio is a way of fabricating size-tuned ZnO NRAs with quite consistent electrical properties.

Carbosilane dendrimers adorned with either triarylamine or carbazole units in their periphery exhibit novel electrochemical behavior in which the electrochemical deposition is controlled by dendrite generation. In addition, the deposited layers remained intact in the depositing solvent, methylene chloride, allowing a second layer to be deposited on top of the first layer. We have sought to establish the suitability of this electrochemical deposition technique for use in the construction of multi-layer OLEDs, which cannot be fabricated via conventional spin-coating with a polymeric precursor. Thus, the electrochemical deposition-based process could potentially offer an ideal combination of deposition control on the one hand and multi-layer fabrication on the other. We report herein the novel electrochemical deposition behavior of arylamine or carbazole end-capped carbosilane dendrimers of the type GnNPB or GnCBP (n = 1-4) and their use for the formation of multi-layer devices for OLEDs.

Due to a rapid shrinkage in memory devices, backned of the line process experiences great difficulties, especially Al metallization. Furthermore, there is a continuous demands in low line resistance in order to promote device performances. In this article, Al damascene process is proposed as compared to Al patterning process, which suffers from inherent pattering issue at a fine pitch under 70nm. The most difficulties in the development of Al damascene process were to form a stable and void free Al in fine trench and to obtain scratch and corrosions free Al surface. In this study, 50nm beyond fill was successfully achieved by “bottom up growth” of CVD Al. For the process, CVD Al by using Methylpyrroridine Alane (MPA) precursor was deposited on a stacked film of CVD TiN and PVD TiN as a wetting layer, which was followed by PVD Al and reflow, then the Al surface was polished with colloidal silica based slurry.

In addition, electrical property of Al scheme and W scheme was compared with damascene pattern, along with which we demonstrated that around 36% decrease in parasitic capacitance is achievable by decrease of metal line height from 3500A to 1000A on simulation test implying that device performance could be enhanced.