The effects of CaTiO3 (CT) and BaZrO3 (BZ) modification upon the crystal structure and electromechanical properties of lead-free Bi0.5Na0.5TiO3–SrTiO3 piezoelectric ceramics were compared within a doping range of 0–4 mol%. The different effects of CT and BZ modification upon the phase transition are clearly observed in the polarization and strain hysteresis loops. The CT-modified specimens maintain strong ferroelectricity without any abnormal enhancement in the electric field-induced strain. However, the addition of as little as 1 mol% BZ induces a transition from a nonergodic relaxor phase to an ergodic relaxor phase, thus resulting in disruption of the ferroelectric order and the generation of a high field-induced strain. The present authors believe that the substitution of large ions (such as Zr4+) into the B-sites, rather than the A-sites, of the Bi0.5Na0.5TiO3-based ceramics plays a significant role in the phase transition behavior.

Modern electronics have been geared toward exploring novel electronic materials that can encompass a broad set of unusual functionalities absent in conventional platforms. In this regard, two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors are highly promising, owing to their large mechanical resilience coupled with superior transport properties and van der Waals (vdW) attraction-enabled relaxed assembly. Moreover, 2D TMD heterolayers based on chemically distinct constituent layers exhibit even more intriguing properties beyond their mono-component counterparts, which can materialize only when they are manufactured on a technologically practical wafer-scale. This mini-review provides a comprehensive overview of recent progress in exploring wafer-scale 2D TMD heterolayers of various kinds. It extensively surveys a variety of manufacturing strategies and discusses their scientific working principles, resulting 2D TMD heterolayers, their material properties, and device applications. Moreover, it offers extended discussion on remaining challenges and future outlooks toward further improving the material quality of 2D TMD heterolayers in both material and manufacturing aspects.

A novel nano-scale manipulator capable of handling low-dimensional materials with three-dimensional linear motion, gripping action, and push–pull action of the gripper was developed for an in situ experiment in transmission electron microscopy. X-Y-Z positioning and push–pull action were accomplished by a piezotubing system, combined with a specially designed assembly stage that consisted of a lever-action gripping tip backed by a push–pull piezostack. The gripper tip consisted of tungsten wire fabricated by electrochemical etching followed by a focused ion beam process. Performance of the nano-scale manipulator was demonstrated in a grab-and-pick test of a single silver nanowire and in an in situ tensile test of a pearlitic steel sample with a specific orientation.

Blackberry is a fruiting berry species with very high nutrient contents. With the recent increasing consumer demand for blackberries, new sources of germplasm and breeding techniques are required to improve blackberry production. This study was carried out to evaluate the genetic diversity (GD) and relationship among 55 blackberry (Rubus fruticosus) mutants derived from γ-ray treatment (52 lines) and N-methyl-N′-nitrosourea (MNU) treatment (three lines) using an inter-simple sequence repeat marker. A total of 18 bands were amplified with an average of 3.6 bands per primer. Among them, eight bands were identified to be polymorphic with a rate of 44.4%. In addition, the GD information content values were highest in the 60 Gy treatment population and the GD values were higher in the γ-ray treatment populations than in the MNU treatment population. According to a cluster analysis, all the mutant lines can be classified into five categories, and the genetic distance was greatest between the 80 Gy-irradiated population and other populations. These results indicate that mutant lines have high GD and can be effectively utilized for improving blackberry breeding.

The threshold voltage (VT) degradation of asymmetric source-drain a-Si:H TFTs due to the electrical stress has been investigated. In the absence of a drain bias (VG=15V, VD=0V), the threshold voltage (VT) shifts of asymmetric TFTs were similar to that of symmetric TFT. However, in the presence of drain bias (VG=15V, VD=20V), the VT shifts of asymmetric TFTs were less than symmetric TFT. The VT shifts of ‘L’ and ‘J’ shaped TFT were 0.29V, 0.24V respectively, while the VT shift of ‘I’ shaped TFT was 0.42V.

The less VT degradation of the asymmetric source-drain a-Si:H TFT compared with the symmetric TFT may be explained by the defect creation model. Since the actual drain width of asymmetric TFT is longer than symmetric TFT at the same W/L ratio, the charge depletion due to the drain bias is larger than that of the asymmetric TFT. Due to the less carrier concentration in the channel, the asymmetric a-Si:H TFT shows the less VT degradation compared with the symmetric TFT.

We propose a pre-electrical bias aging to reduce threshold voltage (Vth) shift of hydrogenated- amorphous silicon thin-film transistor (a-Si:H TFT) for AMOLED display. The quantity of Vth shift in the sample subjected to a bias-aging is reduced due to the reduction of created dangling bond density, compared with a sample without a bias-aging. When an identical stress duration of 50,000 sec is applied to a-Si:H TFT with or without a pre-electrical bias-aging, the created dangling bond density (ΔNDB) after a pre-electrical bias-aging is decreased from 1.38 × 1011/cm2 to 0.685 × 1011/cm2. Our experimental results indicate that after the pre-electrical bias aging, a newly created dangling bond during an electrical stress is decreased because a weak bond density and hydrogen diffusion may be decreased.

We have proposed low hydrogen concentration (CH) silicon nitride (SiNX) as a dielectric for flexible display application. The fabrication temperature on plastic substrate is limited below Tg (glass transition temperature, typically 130˜180 °C) and it was reported that CH in thin film is strongly depends on fabrication temperature. As the fabrication temperature is decreasing, hydrogen concentration is increasing. SiNX deposited in ultra low temperature (< 150 °C) has high CH which is porous, low density. Our experimental results using SiH4, He, N2 gas mixture shows that in the SiNX CH is less than 15 at.%. Breakdown voltage of proposed SiNX dielectric is 5 MV/cm. In the wet etch rate test using a nitride etching solution, He dilution is more dense than NH3 dilution. This process approach is useful for flexible display application.

Nanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.