Limited reaction processing (LRP), a new technique which provides precise control of thermally driven surface reactions, was used to grow multilayer structures composed of semiconductors and insulators. Results are presented for group IV-based materials including epitaxial Si, SiGe alloys, SiO2, and polysilicon. III–V materials such as GaAs, AlGaAs, and InGaAs have also been successfully grown. A number of diagnostic techniques were used to define the advantages and capabilities of LRP, including TEM, SIMS and AES. In addition, some preliminary device results are presented.