A 4.96-m-long sediment core from the Hanon paleo-maar in Jeju Island, Korea was studied to investigate the paleoclimatic change and East Asian monsoon variations during the latest Pleistocene to early Holocene (23,000–9000 cal yr BP). High-resolution TOC content, magnetic susceptibility, and major element composition data indicate that Jeju Island experienced the coldest climate around 18,000 cal yr BP, which corresponds to the last glacial maximum (LGM). Further, these multi-proxy data show an abrupt shift in climatic regime from cold and arid to warm and humid conditions at around 14,000 cal yr BP, which represents the commencement of the last major deglaciation. After the last major deglaciation, the TOC content decreased from 13,300 to 12,000 cal yr BP and from 11,500 to 9800 cal yr BP, thereby reflecting the weakening of the summer monsoon. The LGM in Jeju Island occurred later in comparison with the Chinese Loess Plateau. Such a disparity in climatic change events between central China and Jeju Island appears to be caused by the asynchrony between the coldest temperature event and the minimum precipitation event in central China and by the buffering effect of the Pacific Ocean.

In this paper, the electrical properties of bottom-gate (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) by NiSi2 seed-induced lateral crystallization (SILC) and its applications are presented. Sequential lateral solidification (SLS), which is one of crystallization methods, is known to have poor electrical properties of TFTs with BG structures due to problems induced by laser. Therefore, the laser method cannot be used to well-developed production line of amorphous-Si (a-Si) TFT, resulting in large initial investment cost to change fabrication procedures. On the other hand, the BG poly-Si TFT by SILC (SILC-BGPS TFT) has basically compatible process flows with that of the a-Si TFT. The SILC-BGPS TFT exhibited threshold voltage of -3.9 V, steep subthreshold slope of 130 mV/dec, a high field-effect mobility of 129 cm2/Vs , and I on /I off ratio of ∼106.

Intra-uterine growth retardation has been linked to the development of type 2 diabetes in later life. Mitochondrial changes have been suggested as a link between fetal malnutrition and adult insulin resistance. Taurine has been implicated in this process. We investigated whether protein malnutrition in early life alters mitochondria of the pancreatic islets in adulthood, and whether taurine supplementation restores these changes. Male offspring of rats fed a control diet, a low-protein diet or a low-protein diet supplemented with taurine during pregnancy and lactation were weaned onto the control diet. In each group, at 20 weeks of age, intravenous glucose tolerance tests, euglycaemic–hyperinsulinaemic clamp studies, morphometric analysis of the pancreatic islets and ultra-structural analysis of the mitochondria of the β-cells were performed. The expressions of cytochrome c oxidase (COX) I and mitochondrial respiratory chain complex II were also measured. Fetal protein-malnourished rats showed decreased pancreatic islet mass and reduced insulin-secretory responses to a glucose load. These rats also showed reduced mitochondrial DNA-encoded COX I gene expression in the islets. Electron microscopic examination showed abnormal mitochondrial shapes in the β-cells of fetal protein-malnourished rats. Taurine supplementation to the low-protein diet restored all these changes. Our findings indicate that a maternal protein-restriction diet causes long-lasting mitochondrial changes that may contribute to the development of type 2 diabetes later in life. The lack of taurine may be a key causative factor for these dysfunctional mitochondrial changes.

We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

Ceria doped-yttrium aluminum garnet (Y3Al5O12:Ce3+, YAG:Ce), which is known as an efficient phosphor, have been widely used in optical display and lighting applications. Improved wet chemical method, sol-gel, has been studied, since conventional solid-state reaction requires a high-temperature and prolonged heating to obtain the pure phase. However, there has been little information, such as on pre-firing temperature, concerning high-quality powder formed by the wet chemical process. In this work, YAG:Ce was synthesized with a salted sol-gel process in which a water solution of inorganic salt with citric acid as additive. Transparent starting sol was pre-fired at 200 ˜ 300°C for 2 hrs in air and final annealing to obtain phase-pure YAG:Ce particles was performed at 1100°C for 2 hrs in argon. The effects of pre-firing temperatures on the crystal structure, morphology and luminescence were investigated. Effects of residual organics in the pre-fired gel on the properties of finally annealed phosphors will be fully discussed on the basis of the results of thermal analysis and chemical structure.

The processing map for Zr-based bulk metallic glasses with crystalline in-situ precipitates (â phase) has been constructed from high temperature phase information, chemical composition analysis, and â phase crystallization kinetics. The phase evolution was detected in-situ by high energy synchrotron X-ray, and kinetic information on crystalline phase was measured from electrostatic levitation facility (ESL). This processing map offers a unique opportunity to control both volume and size of the dendritic â phase through composition and processing condition manipulation. The volume fraction of â phase can be customized from 6% to 93 %, and dendrite size is controllable between 1 and 50 µm at the current stage.

The syntxhesis, photo-physics, and electroluminescence of new types of Iridium(III)-encapsulated dendrimers are described. Thus, four different iridium complexes [Ir(III)(C^N)2(LX), Blue-DCBP, Green-DCBP, Yellow-DCBP, and Red-DCBP] with ancillary ligand tethered to the CBP dendritic unit were synthesized and investigated for their photo-physical properties. A large enhancement in electroluminescence performance was observed by using these dendrimers as host/dopant hybrid materials in layered emitting diodes. In particular, host/dopant ratio can be systematically adjusted by varying dendritic generations. These results demonstrate that new Ir(III)-encapsulated dendrimers can be used as potential single-layer materials for organic light emitting diodes. Large difference in the intra-molecular charge transfer phosphorescence quantum yields and electroluminescence effiencies were observed among dendriritic generations.

The morphology evolution of thin films was studied by molecular dynamics simulation. In this simulation four deposition and substrate elements combinations were used: Al on Al(001), Al on Co(001), Co on Co(001), Co on Al(001). The Al thin film was always grown by layer-bylayer mode regardless of substrates used. On the other hand, thin films formed by Co deposition depended on substrates used.While Co thin films on the Co substrates were grown by the island mode, a 3 monolayer (ML) thickness of CoAl surface compound was initially formed on Al substrate, before pure Co thin film growth occurred. In addition to the study on morphologies, the degrees of mixing of atoms in the interface were studied quantitatively. No surface mixing and a sharp interface were observed when Co was used as a substrate regardless of deposited atoms. On the contrary, a large amount of surface mixing or compound formation was observed when Al was used as a substrate.

The formulation of slurries for chemical–mechanical planarization (CMP) is currently considered more of an art than a science, due to the lack of understanding of the wafer, slurry, and pad interactions involved. Several factors, including the large number of input variables for slurries and the synergistic interplay among input variables and output parameters, further complicate our ability to understand CMP phenomena. This article provides a fundamental basis for the choice of chemical additives and particles needed for present-day and next-generation slurry design. The effect of these components on nanoscale and microscale interaction phenomena is investigated. Methodologies are suggested for the development of next-generation slurries required to overcome CMP challenges related to defectivity and the surface topography of soft materials such as Low-κ dielectrics and copper.

Fluorescent dyes including Nile Red (NR), fluorescein, rhodamine and 4- (dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) derivatives were investigated to find an application for the organic light emitting device (OLED). Relationship between the molecular structure and optical property was calculated by ab initio (HF and DFT/6-31G*) and semiempirical (AM1/PM3 and INDO/S) calculation methods for the geometry optimization and for the information of electronic transition, respectively. The absorption maximum and the oscillator strength of molecules strongly depended on the molecular dipole moment, especially for the molecules having both strong electron donor and acceptor group. Since the calculated results were comparable with several experimental results, these semiempirical molecular orbital calculation methods could be used as a powerful prediction tool for optical properties of the luminescent molecules.

In 2000, Korea Astronomy Observatory launched the Near-Earth Object Patrol (NEOPAT) program. NEOPAT has conducted follow-up observations of NEOCP (NEO Confirmation Page) objects and discovered 52 new main-belt asteroids during the observation runs. We initiated collaboration with the Yonsei Survey Telescopes for Astronomical Research (YSTAR) team for NEO search. Wide-field of view, fast read-out time, and fully autonomous data pipeline will enable us to detect and track NEOs with a high efficiency. Scheduled to begin active operations in mid-2001, our survey system is going to be the first network of robotic telescopes for NEO search with automatic access to both hemispheres.

The failure of Si3N4 metal-insulator-metal (MIM) capacitors fabricated by plasma enhanced chemical vapor deposition (PECVD) was investigated using cross-sectional transmission electron microscopy (XTEM) and residual stress analysis. As a result we noted that the failure of the Si3N4 MIM capacitors originated from the microvoids formed over the Si3N4 dielectric and the TiN interlayer. The microvoid of the MIM capacitor, particularly in case of having a very thin Si3N4 of less than 50 nm-thick, caused it to leak out much of the current to the extent of a few microamperes even at bias of 3 volts. The formation of microvoids was explained by the residual stress of the constituent layers at a mechanistic point of view. The stress analysis showed that the absolute stress normalized by the thickness of the Si3N4 layer should be less than 31 MPa/nm to avoid microvoiding. In this research it was noted in conclusion that the stress state of not only the dielectric but also the interlayer should be taken into account for the successful design of high capacitive Si3N4 MIM capacitors.

This paper presents the experimental results of selective Si epitaxial growth from 650 °C to 700 °C on (100) silicon wafers with oxide patterns using reduced pressure chemical vapor deposition with the SiH4-HCl-H2 gas system. In addition, an HCl etching process is introduced and the conditions of the deposition and etching processes are addressed to sustain the selectivity. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO2. In these experiments it has been also observed that the Si layer was grown to 3 nm while sustaining the selectivity. Moreover, further introduction of the HCl etching process following the deposition allowed a 50 nm-thick film to sustain the selectivity for twenty periods.

We have studied the improvement of the quality of undoped a-Si:H deposited by remote-plasma chemical vapour deposition. The effects of reactant gas concentration, rf power, substrate bias voltage on the electrical and optical properties have been investigated. Some hydrogen dilution of si lane improves the photoeletric property and a high rf power gives rise to the defect creation due to the ion bombardment on the growing surface. The positive substrate bias improves the quality of undoped a-Si:H.