6 results
Anti-diffusion barriers for gold-based metallization to GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF14-05
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- 2005
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Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF11-01
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- 2005
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On the dynamics of InGaN dot formation by RF-MBE growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E2.2
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- 2004
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Comparative Study of GaN Based Light Emitting Devices Grown on Sapphire and GaN Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.36
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- 2004
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Mg related Defect Formation during MOVPE Growth of GaN based Films studied by Transmission Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I10.5.1
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- 2001
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Current spreading in AlGaN:Mg cladding layers of laser structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.26.1
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- 2001
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