As astroviral infection rapidly increased in the summer of 2022 in Korea, this study aimed to determine the cause and genotype of astroviruses during this period. From January to December 2022, we tested 43,312 stool samples from patients with acute gastroenteritis utilizing multiplex PCR to detect HAstV. For the HAstV-positive samples, we determined the genotypes of the HAstVs by PCR and sequencing. The monthly positive rate from 2015 to 2022 showed a notable and abrupt increase of HAstV infection between June and August 2022, peaking at 9.8% in July 2022. The annual positivity rate of HAstV remained at 2–3% between 2015 and 2019, and then decreased to 0.5% in 2020, followed by an increase to 1.5% in 2021 and 3.6% in 2022.The genotyped astroviruses in 2022 were all identified as HAstV-1 type, and the nucleotide identity% among them was >99%. The GenBank accession number for the strain genetically closest to the strains identified in our study was ON571597.1, which was HAstV-1 isolated from Pingtan in 2019. Our results provide recent epidemiological data on HAstVs in Korea. The decline and surge in astrovirus positivity in recent years may be related to the COVID-19 pandemic.

Background: Insomnia is a common psychiatric complaint among elderly individuals. This study investigates the prevalence and sociodemographic correlates of insomnia by considering a community sample of elderly individuals in South Korea.

Methods: A face-to-face household survey was conducted in five regions of South Korea from June 2008 to August 2008. Among a total of 3,074 individuals aged 65 years and over, 2,002 participants were interviewed. The presence of insomnia was defined as having at least one of four sleep complaints that included difficulty in initiating sleep (DIS), difficulty in maintaining sleep (DMS), early morning awakening (EMA), and non-restorative sleep (NRS) more than three times per week in the last month. The Restless Legs Syndrome (RLS) Questionnaire, a short form of the Geriatric Depression scale (GDS), and a medical review of systems were implemented.

Results: Insomnia was found in 29.2% of the participants. DIS, DMS, EMA, and NRS accounted for 19.4%, 21.7%, 19.6%, and 8.0% of the participants respectively. Insomnia accompanied by daytime consequences accounted for 17.1% of the participants. The participants who were females, had no education, lived alone, showed symptoms of RLS or depression, and had a lifetime history of physical illness were significantly more likely to report insomnia. The prevalence of DIS, DMS, EMA, or insomnia increased slightly with age, whereas that of NRS decreased slightly. The lifetime history of head trauma, hyperlipidemia, heart disease, anemia, or depression was significantly related to insomnia.

Conclusion: Sleep problems are common among elderly individuals and are closely related to their lifetime history of physical illness.

The purpose of this study was to investigate whether there is any association between preeclampsia and eNOS, DDAH, and VEGF gene polymorphisms, and also to search for a possible association between haplotypes in eNOS, DDHA, and VEGF genes and the risk for preeclampsia. DNA was extracted from whole blood of 223 preeclampsia patients and 237 healthy pregnant women. The genotypes were analyzed by a single base primer extension assay using a SNaPShot assay kit. Results were analyzed with the Student's t-test, Chi-square test, and Logistic regression analysis. Haplotype analyses were performed using Haploview 3.2 version. There were no significant differences in genotype or allele frequencies of eNOS, DDAH, and VEGF gene polymorphisms between preeclampsia patients and controls. No increase in the risk of preeclampsia for those genes was observed under any model of inheritance and there were no statistically significant associations between any haplotypes and preeclampsia risk. Polymorphisms in eNOS, DDAH, and VEGF gene do not seem to be risk factors for preeclampsia.

The oxidation behavior of Cu50Zr50 and Cu46Zr46Al8 glasses during continuous heating up to 1073 K has been investigated, with special emphasis on the oxidation resistance in the supercooled liquid (SCL) state. For Cu50Zr50, the oxide layer mostly consists of monoclinic ZrO2 (m-ZrO2), while for Cu46Zr46Al8, the oxide layer consists of two different layers: an outer layer consisting of tetragonal ZrO2 (t-ZrO2) + Al2O3 + metallic Cu (oxidation product from the SCL state of the glass matrix) and inner layer comprised of m-ZrO2 + metallic Cu islands (oxidation product from the crystallized matrix). Cu-enriched regions consisting of Cu51Zr14 (in Cu50Zr50) or AlCu2Zr + Cu70Zr15Al15 + Cu51Zr14 (in Cu46Zr46Al8) are present below the oxide layer. The present study shows that the addition of Al (8 at.%) in Cu50Zr50 results in a significant deterioration of the oxidation resistance in the SCL state since the solutionizing of Al in t-ZrO2 leads to a higher oxygen ion vacancy concentration, thus providing a higher activity of oxygen ions.

Intra-uterine growth retardation has been linked to the development of type 2 diabetes in later life. Mitochondrial changes have been suggested as a link between fetal malnutrition and adult insulin resistance. Taurine has been implicated in this process. We investigated whether protein malnutrition in early life alters mitochondria of the pancreatic islets in adulthood, and whether taurine supplementation restores these changes. Male offspring of rats fed a control diet, a low-protein diet or a low-protein diet supplemented with taurine during pregnancy and lactation were weaned onto the control diet. In each group, at 20 weeks of age, intravenous glucose tolerance tests, euglycaemic–hyperinsulinaemic clamp studies, morphometric analysis of the pancreatic islets and ultra-structural analysis of the mitochondria of the β-cells were performed. The expressions of cytochrome c oxidase (COX) I and mitochondrial respiratory chain complex II were also measured. Fetal protein-malnourished rats showed decreased pancreatic islet mass and reduced insulin-secretory responses to a glucose load. These rats also showed reduced mitochondrial DNA-encoded COX I gene expression in the islets. Electron microscopic examination showed abnormal mitochondrial shapes in the β-cells of fetal protein-malnourished rats. Taurine supplementation to the low-protein diet restored all these changes. Our findings indicate that a maternal protein-restriction diet causes long-lasting mitochondrial changes that may contribute to the development of type 2 diabetes later in life. The lack of taurine may be a key causative factor for these dysfunctional mitochondrial changes.

The diatoms are an ecologically important group of algae that have been extensively studied by ecologists and taxonomists. However, the large-scale patterns of diatom distribution and the factors underlying this distribution are largely unknown. The aims of this study were to identify the large-scale spatial patterns of benthic diatom assemblages in Korean streams and rivers, and to assess the importance of numerous environmental factors on diatom distribution. We classified 720 study sites based on diatom flora. Benthic diatoms, water chemistry, altitude, and riparian land cover and use were characterized by multivariate analyses, Monte Carlo permutation tests, and indicator species analysis. In total, we identified 531 diatom taxa. Diatom assemblages were mostly dominated by species of the genera Achnanthes, Navicula, Nitzschia, Cocconeis, Fragilaria (Synedra included), Cymbella, Gomphonema, and Melosira. Cluster analysis partitioned all 720 sites into eight groups based on diatom species composition. Canonical correspondence analysis indicated that altitude, land cover and use, current velocity, electrical conductivity, and nutrient levels explained a significant amount of the variation in the composition of assemblages of benthic diatoms. At the national scale, a downstream ecological gradient was apparent, from fast-flowing, mostly oligotrophic highland streams to slow-flowing, mostly eutrophic lowland rivers. Our data suggest that spatial factors explain some of the variation in diatom distribution. The present investigation of the spatial patterns of benthic diatoms, the ecological determinants of diatom occurrence, and the identification of diatom indicator species contributes to development of a program for assessing the biological integrity of lotic ecosystems in Korea.

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

The anisotropy in the fatigue behavior of rolled Mg–3Al–1Zn alloy between the rolling direction and normal direction to the rolling plane was investigated. The {10-12} twinning–detwinning characteristics were found to play key roles in the anisotropic fatigue deformation behavior by inducing a change in the predominant plastic deformation mechanism, which controlled the flow stress and finally influenced the fatigue resistance by generating mean stress. Energy-based approach was successfully used to describe anisotropic fatigue life behavior.

An improvement of the fatigue resistance of rolled AZ31 magnesium alloy was attempted by reducing the tensile mean stress developed during fatigue deformation, which was achievable by tailoring the {10-12} twinning-detwinning characteristics of the material through the precompression process. The modification of the {10-12} twinning-detwinning characteristics made it possible to control the plastic deformation mechanisms activated during fatigue deformation so that the imposed tensile strain could be fully accommodated by detwinning alone, which led to a significant reduction of tensile flow stress, finally resulting in the reduction of mean stress.

The ZnO TFTs have attracted much attention as key component for flexible displays because they can be fabricated on plastic substrates at low temperature and exhibit good electrical performance. However, the ZnO films are polycrystalline with grain boundaries even if formed at room temperature, which deteriorate the uniformity of TFT characteristics. A few research groups have reported high performance amorphous indium-gallium-zinc oxide TFTs to solve the native problem of nonuniformity of ZnO TFTs. However, there are few researches on the process parameter effects on the variation of a-IGZO TFT characteristics. In this study, we focus on the effect of the source/drain overlap length on threshold voltage(VT) of a-IZO TFTs with differentiating channel deposition method. The experimental structures for this work are bottom-gated TFTs with a-IGZO channel that were deposited by RF and DC magnetron sputtering on glass. RF and DC sputtering were carried out by magnetron power density of (1.4 W/cm2)/ (2.0 W/cm2) in Ar/O2 gas ratio of (65/35)/(72/28), and the entire gas pressure were 5.0 mTorr and 3.4 mTorr. The width/length(um/um) of device was split to 10/7,10/10,10/30,10/50. Each of the patterns has seven source/drain overlap length: -3um,-2um,-1um,0um,1um,2um,3um. We extracted VT of RF and DC through the VG-ID curve. There are significant VT difference in both RF and DC according to the overlap length: VT of DC(RF) is 1.31(0.74)V at W/L=10/50 and 10.21(5.74)V at W/L=10/30. VT increases definitely where less than 1um overlap length and short channel TFT is more influenced by overlap length, which is more severe in RF group. We calculated total channel resistance (RT) from VD-ID curve. RT of devices with the positive overlap can be expressed by RT, Postive=Rch+Rc. Here, Rch is net channel resistance which becomes smaller when channel length decreases and Rc is contact resistance. RT with negative overlap, is RT, Negative=Rch+Rc+Roffset. Roffset is offset resistance formed by negative overlap and can be extracted by subtracting RT, Postive from total RT, Negative. The RT of DC(RF) at offset channel length of-1um,-2um,and-3um is 4.43105(2.7 106)cm, 1.17 106(3.48 106)cm, and 1.46 106(4.73 106)cm, respectively(W/L=10/10um) RF group which shows inferior electrical characteristics such as lower mobility and larger subthreshold slope to DC, have larger Roffset than the DC. This implies that the devices require a bit of positive source/drain overlap length for uniform VT especially when the channel resistance is high. But Overlap region causes difficulties in the device area to be miniaturized. In summary, as the source/drain overlap length decreases to negative value, the threshold voltage of a-IGZO TFTs increases sharply and these tendency strongly depends on a-IZO film quality, which means the overlap length is very important control parameter of a-IGZO TFTs for the uniform threshold voltage especially when the channel resistance is high

a-IGZO TFT is a promising candidate device for an alternative to poly-Si TFTs or a-Si TFTs, because they provide better uniformity in terms of their important device parameters, including the threshold voltage and mobility due to their amorphous phase, and a high mobility (>10 cm2/Vs) is attainable with these devices even in the amorphous phase. Recently, a-IGZO TFTs have been extensively studied by various groups. However, there is little report on interface and bulk effect on device performances and reliability as separately. For investigating the interface and bulk effect, we fabricated two a-IGZO thin film transistors with different channel deposition conditions, RF and DC magnetron sputtering. Specific conditions of RF and DC sputtering are described as follows; magnetron power density of 1.4 W/cm2/2.0 W/cm2 in Ar/O2 gas ratio of (65/35)/(72/28), and the entire gas pressure was 5.0 mTorr and 3.4 mTorr, respectively.In order to characterize the channel quality, C-V curve was measured with various frequencies of (10KHz˜1MHz). RF sputtered channel has higher frequency dependency compared to DC sputtered channel. It means that RF sputtered channel has higher bulk traps in channel compared to DC sputtered channel.

Device performance was characterized through the ID-VG measurement. Electrical parameters of RF and DC sputtered devices are VT=3.5/2.7V, on-off ratio=105/08, SS=2/0.4 V/decade, and uFE= 5/11 cm2/V-s, respectively. It is thus clear that the device performance of DC sputtered device is more superior to RF sputtered device. Therefore, it can be said that the poor device performance of RF device is ascribed to insufficient channel quality, as mentioned in C-V curve.

For reliability study, we measured PBTI and ID-VG hysteresis with normalized gate stress bias and high temperature hot chuck system. Through the unchanged field effect mobility during the stress and relaxation time, and nearly recovered VT and subthreshold slope (SS) after long relaxation time, we were able to know that pre-existed trap was main factor of reliability degradation. Moreover, SS degradation during stress time is more severe in RF device than DC device. It is also proving that RF channel characteristic is worse than DC channel. In high temperature, leakage current increments of RF device were more severe than DC device. This also indicates that bulk traps of RF device in channel region are larger than that of DC device. VT shift of DC sputtered device for PBT stress and hysteresis was higher than that of RF sputtered device. As well known, PBTI is closely related to insulator bulk traps, which shows that channel deposition conditions affect insulator trap characteristics. In summary, device performance of a-IGZO deposited by DC sputtering is better than RF sputtering, which is because DC sputtering improves channel quality of a-IGZO. However, VT shift of DC sputtered device are worse than RF sputtering, which may be related with high magnetron power density.

Nitrogen-doped titanium oxides nanostructures were synthesized by a new method proposed here from titanium oxysulfate precursor in a NH4OH solution under hydrothermal conditions without any extra templates as structure driving agents. The material synthesized with NH4OH was an ammonium titanate and showed curled nanosheets, nanofibers or nanorods morphologies depending on the molar ratio of NH4OH to titanium precursor and the hydrothermal temperature. The nanofibrous titanates had a high surface area over 500 m2 g−1 and a pore volume of 0.72 cm3 g−1. The calcination of as-synthesized material at 673 K produced a titanium oxynitride TiO2−xNx with anatase phase, which absorbed visible light. Ion exchange of ammonium ion of the titanate with sodium Na2Ti3O7−xNx enhanced the thermal stability of the titanate phase.

The reaction sequence and microstructure evolution of a crystalline MgB2 layer were examined during ex situ annealing of evaporated amorphous boron (a-B) with Mg vapor. Mg was found to migrate rapidly into the a-B layer in the initial stage of reaction with a uniform concentration of about 12 at.%. A thin layer of crystalline MgO was observed at the interface between a-B and the Al2O3 substrate. It was identified that an MgB2 layer started to form at the surface by the nucleation and growth process in polycrystalline form. It appears that there exists two distinct growth fronts in the MgB2 layer: one lying at the surface and the other lying at the interface between the MgB2 layer and the a-B. The microstructural evolution of this layer showed significant differences depending on the location of these two growth fronts.