We report structural and electronic properties of Aligned-Crystalline Si (ACSi) films on glass substrates. These films show enhanced majority carrier mobilities and minority carrier lifetimes with increasing crystallinity, i.e., with improving alignment and connectivity of the grains. A 0.4-μm-thick ACSi film with a total grain mosaic spread of 4.2° showed Hall mobility of 47 cm2/V.s for a p-type doping concentration of 1.9×1018 cm−3. A prototype n+/p/p+–type diode fabricated using a 4.2-μm-thick ACSi film showed minority carrier lifetime of ∼3.5 μs and estimated diffusion length of ∼30 μm in the p layer with a doping concentration of 5×1016 cm−3.

A single LaMnO3 buffer layer was developed for the growth of superconducting thick YBa2Cu3O7−δ (YBCO) films on polycrystalline Ni-alloy substrates where a biaxially textured MgO layer, produced by ion-beam assisted deposition (IBAD), was used as a template. Using pulsed laser deposition, a 1.65-μm-thick YBCO film with a critical current density of 1.4 × 106 A/cm2 in self field at 75 K was achieved on sputtered LaMnO3-buffered IBAD MgO substrates. This corresponds to a critical current (Ic) of 231 A/cm-width. This result demonstrates the possibility of using both LaMnO3 buffer and IBAD MgO template for producing high current density YBCO-coated conductors.

Nickel-based superalloys have been coated with magnesium oxide (MgO) using ion-beam-assisted deposition (IBAD). This technique produced a well-oriented bi-axially textured MgO template layer with a Ф scan full width half maximum of 6.4°. The layer architecture for these samples was as follows: polished hastelloy C276/amorphous Si3N4/IBAD MgO/ pulsed laser deposited (PLD) Y2O3–ZrO2/PLD CeO2/PLD YBa2Cu3O7?δ. The subsequent heteroepitaxial PLD of 1.5-mm-thick YBCO showed a nominal critical current density of over 1 MA/cm2 (75 K, self-field) along a microbridge and had an in-plane mosaic spread of 4.8° and an out-of-plane spread of 1.3°. These results compare well with our earlier work using IBAD yttria-stabilized zirconia (YSZ) as a template layer and indicate that IBAD MgO is a suitable substitute. Furthermore, these results suggest that IBAD MgO could be adapted to and increase the feasibility of a continuous process to fabricate longer lengths of coated conductors at speeds 100 times faster than that previously realized with IBAD YSZ.

SrTiO3 (STO) is a potential buffer layer material for use in YBa2Cu3Oy (YBCO) coated conductors based on the IBAD MgO process. However, the interactions with YBCO are not yet fully understood and little information exists in the way of phase diagrams. With this in mind, the tie-line between STO and SrCuO2 in the pseudo-ternary system SrO-CuO-TiO2 was investigated. Phase assemblages and compositions were determined by x-ray diffraction and electron microscopy in the temperature range of 1000°C to 1100°C in oxygen partial pressures of 1%, 10%, and 100%. Preliminary results showed that an appreciable amount of copper substitutes into the STO crystal structure. Conversely, Ti substitution into the SrCuO2 phase was not detected.

The current protocol for processing (Bi,Pb)2Sr2Ca2Cu3O10-x (Bi-2223) multifilamentary tapes involves the in situ formation of the primary phase from a suitable mixture of precursor phases. As such, the developments during the first few minutes of heat treatment determine to a large extent the efficiency of primary phase development, competing secondary phase development, texture evolution, and grain-to-grain connectivity. This work documents the development of the liquid phase, secondary phases, defects which may affect alignment and reaction kinetics, and the precipitation of Bi-2223 from the liquid phase.

Each process used to deposit or make the bi-axially textured template, buffer layer(s), and the superconductor in a coated conductor creates interfaces along which defects or interfacial reactions may result. These defects can be additive and propagate through the entire film structure to affect the growth and properties of the superconducting film. Defects within the films and their corresponding transport properties have been correlated with the differences in the thickness of the underlying buffer layer material. This knowledge can be used to control and engineer the structure of the coated conductor to maximize critical current densities.

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.

A detailed compositional analysis of high-critical-current-density (Jc) (55 and 65 kA/cm2 at 77 K) (Bi,Pb)2Sr2Ca2Cu3Oy (Bi-2223) tapes was undertaken by energy dispersive spectroscopy in the transmission electron microscope. Structural features were coupled with characteristic compositions of the Bi-2223 phase. The average of all compositional measurements of the Bi-2223 phase was determined to be Bi1.88Pb0.23Sr1.96Ca1.95Cu2.98Oy. However, spatial variations in the Bi-2223 composition and differing phase equilibria were found throughout the filament structure. In particular, a considerable range of Bi-2223 compositions can be found within a single tape, and the lead content of the Bi-2223 phase is significantly depressed in the vicinity of lead-rich phases. The depletion of lead in the Bi-2223 phase around the 3221 phases may be a current-limiting microstructure in these tapes.

The effect of changes in the oxygen partial pressure during the heat treatment of Bi-2223 tapes has been investigated. Distinct differences were observed in the phase assemblages, compositions, and critical current densities. Of particular importance in the correlation of transport properties and microstructure was the redistribution of lead in both the secondary phases and the Bi-2223 matrix. The highest Jc values were associated with tapes that contained Ca2PbO4 as part of the phase assemblage coupled with lower concentrations of lead in the superconducting phase. The high Jc of 30.4 kA/cm2 was obtained in tapes processed at 820 °C where the oxygen partial pressure was increased from 10% O2/Ar to 20% O2/Ar after 25 h of each 50-h sinter cycle. Samples processed only in 10% O2/Ar at 820 °C did not contain Ca2PbO4, had slightly higher concentrations of lead in the superconducting phase, and had significantly lower Jc values.

A two-powder process is described for the production of uniform, fine-grained Bi2Sr2Ca2Cu3Oy (Bi-2223) powders. One powder is the Bi2.1−xPbxSr1.9−yCayOz (2:2 Cu-free) phase. The other is a multi-phase powder of approximate overall composition SrCaCu3Oy. The 2:2 Cu-free is one of the first Bi-containing phases to form from a nominal Bi-2223 mixture of oxides and carbonates. This precursor route was chosen for investigation because (1) the powders have very similar particle morphologies and (2) the mixing volumes are closely matched. Both of these characteristics facilitate the milling and blending process. This precursor mix was found to be stable in that explosive grain growth of undesirable phases was not observed during sintering. Critical current densities up to 26,900 A/cm2 in self field at 75 K were obtained in tapes.

Ge films have been grown by ion-assisted deposition on Si(100) substrates. Initial studies were conducted to determine the growth and morphology of Ge using a modified crucible arrangement and ionization chamber. It was observed that a narrow substrate temperature range existed for the deposition of smooth Ge films without ion assistance. Ionization and acceleration appear to induce additional damage to the film without improving crystalline quality.