We studied the structural and magnetic properties of dilutely (5 mol%) doped 3d elements (Co and Fe) in PLD grown HfO2 high-k dielectric thin films. Monoclinic phase of HfO2 was stabilized by Co- and Fe- substitution at significantly low growth temperature (∼725 °C). No magnetic moment was observed in Co-doped HfO2 films. On the other hand, 5 mol% Fe-doped HfO2 films grown at different oxygen partial pressures (10-6 torr to 10 mtorr) showed interesting magnetization behavior with varying coercive field due to the segregation of Fe2O3 and Fe3O4 phases. Magnetic force microscopy (MFM) study revealed magnetic impurity phase segregation. Films grown at 1 × 10-4 torr of oxygen partial pressure (O2pp) showed oriented Fe3O4 impurity line (220) and the coercive field (Hc) ∼ 350 Oe. Films grown at higher oxygen partial pressure (1x10-2 torr) showed no impurities and magnetization was absent. Coercive field varied as a function of oxygen partial pressure. This property will be of great interest from the view point of magneto-optic applications.