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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 793-798
- Print publication:
- 1999
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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G7.4
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- 1998
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Magnetic Resonance Studies of Recombination Processes in GaN-Based Light Emitting Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 673
- Print publication:
- 1995
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Detection of Magnetic Resonance on Shallow Donor - Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 667
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- 1995
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Optically Detected Magnetic Resonance of Group IV and Group VI Donors in Al0.6Ga0.4As/GaAs Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 753
- Print publication:
- 1989
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Physical Properties of Two Metastable States of Amorphous Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 27 / 1983
- Published online by Cambridge University Press:
- 25 February 2011, 217
- Print publication:
- 1983
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