We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 × 1019 cm−3 as 261.12 cm2/Vs for SLEO a-GaN and 106.77 cm2/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was ∼12% less than planar samples.

A complete analysis of leakage currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) with regrown aperture and source regions was carried out. The total observed leakage current was found to be a combination of both gate leakage and source leakage. Two paths for source leakage have been identified; electrons passing directly through the insulating layer to the drain region as well as electrons traveling through the aperture but underneath the 2DEG at the AlGaN/GaN interface. Source leakage through the insulating layer resulted from pits formed at the onset of regrowth, as the sample was heated to growth temperature, and was successfully eliminated by optimizing regrowth conditions. Source leakage underneath the 2DEG occurred when the unintentionally doped (UID) GaN layer above the insulating layer was not fully depleted and could be eliminated by reducing the thickness of the UID GaN layer. Gate leakage has been attributed to the enhanced incorporation of n-type impurities inside as well as above the aperture region during regrowth, resulting in a narrowing ofthegateSchottkybarrier.

Heterostructure field effect transistors (HFETs) based on AlGaN / GaN structures have shown good performance as high power and high frequency devices. Theoretical simulations of transport in short channel HFETs show that there are several areas where considerable improvements in mobility, etc. can be made if thin composite structures (as considered in this work) can be utilized. We examine transport in a metal / AlGaN / InN / GaN composite structure. The InN region is very thin (∼ 15 Å) and is introduced to improve the low field transport without significantly impacting the device breakdown properties. Our model is capable of examining any other type of composite structure as well. Our simulation method consists of charge control solution of the heterostructure wave functions, followed by Monte Carlo simulation of scattering and free flight events. We present comparison of results on i) metal / AlGaN / GaN structure, and ii) a metal / AlGaN / GaN structure with a thin InN channel of the order of a few mono-layers. We find that mobility in the channel can improve considerably with very little effect on the mobility - charge product. Indeed, the charge density induced in the thin InN channel region is ∼ 1013cm∼2. While the peak velocities in a metal / AlGaN / InN / GaN structure exhibit an increase of nearly 30% over the values in metal / AlGaN / GaN structures, the low field mobilities are also increased. Low-field mobilities of ∼ 2500 cm2 (V · s)∼ are predicted along with high sheet charges for low interface disorder for the structure with a thin InN layer. For higher degree of interface disorder (∼ 70Å), we have found good agreement with experimental Hall mobility data for similar structures. At higher electric fields, we find that most electron population transfers to higher valleys or other sub-bands that lie in AlGaN or GaN. This ensures that high field breakdown of low band gap InN layer is also suppressed.

Waveguide prism-coupling methods were used to measure the ordinary and extraordinary refractive indices of AlxGa1-xN films grown on sapphire substrates by HVPE and MOCVD. Several discrete wavelengths ranging from 442 nm to 1064 nm were used and the results were fit to one-term Sellmeier equations. The maximum standard uncertainty in the refractive index measurements was ± 0.005 and the maximum standard uncertainty in the self-consistent calculation for film thickness was ± 15 nm. Analysis of normal-incidence spectroscopic transmittance and reflectance measurements, correlated with the prism-coupling results, was used to determine the ordinary refractive index as a continuous function of wavelength from the band gap wavelength of each sample (between 252 nm and 364 nm) to 2500 nm. The Al compositions of the samples were determined using energy-dispersive X-ray spectroscopy analysis (EDS). HVPE grown samples had compositions x = 0.279, 0.363, 0.593, and 0.657. MOCVD samples had x = 0.00, 0.419, 0.507, 0.618, 0.660, and 0.666. The maximum standard uncertainty in the absolute EDS-determined value for x was ± 0.02.

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.