The coastline of the Korean Peninsula is influenced by three major oceanographic ecoregions, including the estuarine Yellow Sea ecoregion on the west coast, the warmer and saline East China Sea ecoregion on the south coast, and the cold East Sea ecoregion on the east coast. The influence of these marine ecoregions on the distribution of intertidal barnacles has not been extensively studied. The present study examines the biogeography of thoracican barnacles from intertidal and shallow subtidal zones, along the coasts of Korea. Twenty-one species in seven families were identified, including three species of coral-associated barnacles. Species composition varied significantly in the three marine ecoregions. Multivariate analysis showed barnacle assemblages were significant among the three ecoregions, although there are large overlaps of clusters between the Yellow Sea and East China Sea ecoregions. The estuarine species, Fistulobalanus albicostatus, occurred mainly in the Yellow Sea ecoregion; warm-water species, Tetraclita japonica, and sponge inhabiting barnacles Euacasta dofleini were observed in the East China Sea ecoregion; and cold-water species, Balanus rostratus and Perforatus perforatus, were found in the East Sea ecoregion. Four invasive barnacle species were recorded and the European barnacle Perforatus perforatus expanded its range northward from its recorded distribution nine years earlier. The cold-water species, Chthamalus dalli and Semibalanus cariosus, previously recorded in the East Sea ecoregion, were absent in the present survey. A trend of increasing seawater temperatures in Korean waters may have a significant impact on the distribution of cold-water species and enhance the northward invasion of P. perforatus.

Lack of understanding the effects of single- and multiple-weed interference on soybean yield has led to inadequate weed management in Primorsky Krai, resulting in much lower average yield than neighboring regions. A 2 yr field experiment was conducted in a soybean field located in Bogatyrka (43.82°N, 131.6°E), Primorsky Krai, Russia, in 2013 and 2014 to investigate the effects of single and multiple interference caused by naturally established weeds on soybean yield and to model these effects. Aboveground dry weight was negatively affected the most by weed interference, followed by number of pods and seeds. Soybean yield under single-weed interference was best demonstrated by a rectangular hyperbolic model, showing that common ragweed and barnyardgrass were the most competitive weed species, followed by annual sowthistle, American sloughgrass, and common lambsquarters. In the case of multiple-weed interference, soybean yield loss was accurately described by a multivariate rectangular hyperbolic model, with total density equivalent as the independent variable. Parameter estimates indicated that weed-free soybean yields were similar in 2013 and 2014, i.e., estimated as 1.72 t and 1.75 t ha−1, respectively, and competitiveness of each weed species was not significantly different between the two years. Economic thresholds for single-weed interference were 0.74, 0.66, 1.15, 1.23, and 1.45 plants m−2 for common ragweed, barnyardgrass, annual sowthistle, American sloughgrass, and common lambsquarters, respectively. The economic threshold for multiple-weed interference was 0.70 density equivalent m−2. These results, including the model, thus can be applied to a decision support system for weed management in soybean cultivation under single and multiple-weed interference in Primorsky Krai and its neighboring regions of Russia.

Re-examination of the holotype male of Zehntneriana villosa (Zehntner, 1894) (from Ambon, Indonesia) shows that Japanese specimens previously referred to this species should be designated as a new species, Zehntneriana tadafumii sp. nov. The new species differs from Z. villosa in several characters, including the carapace, epistome, third maxilliped and thoracic sternum. Here, we redescribe and illustrate Z. villosa s. str. and the new species. In addition, the taxonomy of Zehntneriana Ng & Takeda, 2010, is also discussed.

Cancer is a leading cause of death, and the dietary pattern in Korea is changing rapidly from a traditional Korean diet to a Westernised diet. In the present study, we investigated the effects of dietary factors on cancer risk with a prospective cohort study. Among 26 815 individuals who participated in cancer screening examinations from September 2004 to December 2008, 8024 subjects who completed a self-administered questionnaire concerning demographic and lifestyle factors, and a 3 d food record were selected. As of September 2013, 387 cancer cases were identified from the National Cancer Registry System, and the remaining individuals were included in the control group. The hazard ratio (HR) of cancer for the subjects older than or equal to 50 years of age was higher (HR 1·80, 95 % CI 1·41, 2·31; P< 0·0001) than that for the other subjects. Red meat consumption, Na intake and obesity (BMI ≥ 25 kg/m2) were positively associated with overall cancer incidence in men (HR 1·41, 95 % CI 1·02, 1·94; P= 0·0382), gastric cancer (HR 2·34, 95 % CI 1·06, 5·19; P= 0·0365) and thyroid cancer (HR 1·56, 95 % CI 1·05, 2·31; P= 0·0270), respectively. Participants who had at least three dietary risk factors among the high intakes of red meat and Na, low intakes of vegetables and fruits, and obesity suggested by the World Cancer Research Fund/American Institute for Cancer Research at baseline tended to have a higher risk of cancer than the others (HR 1·26, 95 % CI 0·99, 1·60; P= 0·0653). In summary, high intakes of red meat and Na were significant risk factors of cancer among Koreans.

The crystallization of amorphous silicon thin films by electron beam exposure was studied. Amorphous silicon and silicon dioxide layers were deposited on glass substrate by PECVD at 360 °C. The optimization to crystallize 300 nm thick amorphous silicon film was carried out at a RF power of 300 W, DC voltage of 1500 V, Argon gas flow rate of 3 sccm and a distance between electron beam mesh and sample of 40 mm. High quality nano-crystalline silicon films with an activation energy of 0.47 eV from conductivity, a grain size of 15–45 nm from SEM and Raman crystalline volume fraction of 93.1% were fabricated. We expect that e-beam exposure will be applied to crystallization of amorphous silicon films.

A series of annual tree-ring measurements has been performed in order to reconstruct the radiocarbon concentration variation in the Korean atmosphere from AD 1650 to 1850. The absolute ages of the samples were determined using dendrochronology. Alpha-cellulose extraction was applied to prepare the tree-ring samples for precise 14C measurement. The 14C concentrations of the tree rings were then plotted with the dendrochronological ages and showed that during the period AD 1650–1850, the discrepancy in 14C concentration in the Korean atmosphere from IntCal data is small enough to use IntCal data without any further correction. This is nearly one third of the average offset of the 400 yr from AD 1250 to 1650. One of the probable causes for the regional offset around Korea is the contribution of 14C-depleted CO2 released from the northern Pacific Ocean, where old deep water upwells to the surface. It is likely that the release rate of 14C-depleted CO2 decreased due to the temperature change during the Little Ice Age.

Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The formation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference.

We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed the multi-layered SiC nanocrystals between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.

We have investigated temperature dependence on the hysteresis phenomenon of SLS poly-Si TFT on a glass substrate, extremely at low temperature (213K). The p-type sequential lataral solidification (SLS) polycrystalline Silicon (poly-Si) TFT was fabricated on glass substrate. As the temperature was reduced, it was observed that hysteresis phenomenon was increased, whereas the hysteresis was suppressed at high temperature. This could be explained by a difference of initially electron and hole trapped charges into gate insulator is much larger in low temperature than in high temperature. And we have verified that drain current was changed with a different previous gate starting voltage even at same bias condition by experimental results due to the hysteresis phenomenon of SLS poly-Si TFT. Hysteresis of SLS poly-Si TFT should be improved for a pixel element of high quality AMOLED display.

We have fabricated the new top gate depletion mode n-type alternating magnetic field enhanced rapid thermal annealing (AMFERTA) polycrystalline silicon (poly-Si) thin film transistors (TFTs), which show the excellent electrical characteristics and superior stability compared with hydrogenated amorphous silicon (a-Si:H) TFTs and excimer laser crystallized (ELC) low temperature polycrystalline silicon (LTPS) TFTs. The fabricated AMFERTA poly-Si TFTs were not degraded under hot-carrier stress, and highly biased vertical field stress. The considerably large threshold voltage shift (ΔVTH) and trap state density reducing were occurred when the gate bias and drain bias were both large enough. The dominant mechanism of instability in the fabricated depletion mode AMFERTA poly-Si TFTs may be due to carrier induced donor-like defects reduction within the channel layer, especially near the drain junction.

We have fabricated a new magnetic field enhanced solid phase crystallization (FESPC) polycrystalline silicon (poly-Si) thin film transistors (TFTs), which shows the excellent electrical characteristics and superior stability compared with hydrogenated amorphous silicon (a-Si:H) TFTs. The mobility (μ) and threshold voltage (VTH) of p-type TFTs of which the channel width and length are 5 μm and 7 μm, respectively are 31.98 cm2/Vs and -6.14 V, at VDS=-0.1 V. In the FESPC TFTs, the characteristics caused by grain boundary are remarkable due to large number of grain boundaries in the channel compared with poly-Si TFTs. The VTH of the TFT which have 5 μm channel length is smaller than that of 18 μm channel length by 1.36 V, which is considerably large value. It is due to the large number of grain boundaries in the channel and the high lateral electric field. The grain boundary potential barrier height is decreased, when the large lateral electric field is applied (which is called DIGBL effect). As a result of increased mobility, the drain current is increased, and VTH can be decreased. The activation energy (Ea) is strongly depended on the drain bias and the number of grain boundaries. is decreased, caused by the large drain bias and/or smaller number of grain boundaries. This decreased Ea can be reduced VTH due to increased the drain current. VTH of p-type poly-Si TFT employing FESPC on the glass substrate is affected by channel length and VDS due to energy barrier lowering effect at the grain boundary by increased lateral electrical field.

The processing map for Zr-based bulk metallic glasses with crystalline in-situ precipitates (â phase) has been constructed from high temperature phase information, chemical composition analysis, and â phase crystallization kinetics. The phase evolution was detected in-situ by high energy synchrotron X-ray, and kinetic information on crystalline phase was measured from electrostatic levitation facility (ESL). This processing map offers a unique opportunity to control both volume and size of the dendritic â phase through composition and processing condition manipulation. The volume fraction of â phase can be customized from 6% to 93 %, and dendrite size is controllable between 1 and 50 µm at the current stage.

The threshold voltage (VT) degradation of asymmetric source-drain a-Si:H TFTs due to the electrical stress has been investigated. In the absence of a drain bias (VG=15V, VD=0V), the threshold voltage (VT) shifts of asymmetric TFTs were similar to that of symmetric TFT. However, in the presence of drain bias (VG=15V, VD=20V), the VT shifts of asymmetric TFTs were less than symmetric TFT. The VT shifts of ‘L’ and ‘J’ shaped TFT were 0.29V, 0.24V respectively, while the VT shift of ‘I’ shaped TFT was 0.42V.

The less VT degradation of the asymmetric source-drain a-Si:H TFT compared with the symmetric TFT may be explained by the defect creation model. Since the actual drain width of asymmetric TFT is longer than symmetric TFT at the same W/L ratio, the charge depletion due to the drain bias is larger than that of the asymmetric TFT. Due to the less carrier concentration in the channel, the asymmetric a-Si:H TFT shows the less VT degradation compared with the symmetric TFT.

The syntxhesis, photo-physics, and electroluminescence of new types of Iridium(III)-encapsulated dendrimers are described. Thus, four different iridium complexes [Ir(III)(C^N)2(LX), Blue-DCBP, Green-DCBP, Yellow-DCBP, and Red-DCBP] with ancillary ligand tethered to the CBP dendritic unit were synthesized and investigated for their photo-physical properties. A large enhancement in electroluminescence performance was observed by using these dendrimers as host/dopant hybrid materials in layered emitting diodes. In particular, host/dopant ratio can be systematically adjusted by varying dendritic generations. These results demonstrate that new Ir(III)-encapsulated dendrimers can be used as potential single-layer materials for organic light emitting diodes. Large difference in the intra-molecular charge transfer phosphorescence quantum yields and electroluminescence effiencies were observed among dendriritic generations.

The structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

The H+-ion treatment effect on TlH2PO4, a KH2PO4 (KDP)-type ferroelectrics, was studied by nuclear magnetic resonance (NMR) and AC dielectric measurements. A sample of TlH2PO4 was irradiated by 1-MeV H+ ion beams to a dose of 1015 ions/cm2. The irradiation changed the hydrogen-bond geometry, presumably affecting the order-disorder proton dynamics. The deformation of the PO4 tetrahedra was identified by the isotropic chemical shift and the full width at half maximum (FWHM) of the high-resolution 31P NMR spectra. A prominent decrease in the dielectric constant was also observed after the irradiation. The macroscopic and microscopic changes due to the irradiation are discussed in the light of the proton dynamics.

III-nitride films were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of a substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched one were investigated using an atomic force microscope. The structural and optical properties of GaN on CIS were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, AFM and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The GaN layer didn't grow locally over the surface of the cone shape pattern. The reason is that (0001) c-plane which is favor for GaN growth doesn't exist on the cone shape patterned region. The lateral growth of the GaN layer that was initially grown on the (0001) c-plane among pattern regions, was enhanced by raising the growth temperature and lowering the reactor pressure, resulting in the smooth surface over the pattern region. The (102) FWHM of GaN layer on the patterned substrate was better than that of GaN on the conventional substrate and no defect was detected at the interface of the cone shape pattern. The optical power of the LED on the patterned substrate was 20% higher than that on the conventional substrate due to the increased extraction efficiency.